A5007298346- Advanced Thermoelectric Materials and Devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Thermal Radiation and Cooling Technologies
- Advanced Sensor and Energy Harvesting Materials
- Neural Networks and Reservoir Computing
- Advanced Chemical Sensor Technologies
- Gas Sensing Nanomaterials and Sensors
- Adhesion, Friction, and Surface Interactions
- Innovative Energy Harvesting Technologies
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Chalcogenide Semiconductor Thin Films
- Electronic Packaging and Soldering Technologies
- Metal and Thin Film Mechanics
- Environmental Education and Sustainability
- Energy Harvesting in Wireless Networks
- Advanced Photocatalysis Techniques
- Anodic Oxide Films and Nanostructures
- Thermal properties of materials
- Copper Interconnects and Reliability
- Energy and Environmental Systems
- Nonlinear Dynamics and Pattern Formation
- Magnetic properties of thin films
Korea Advanced Institute of Science and Technology
2017-2024
We propose a novel memory device to overcome the limited <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> window in charge trap flash (CTF) memory, which prevents realization of high number bits/cell. The proposed (named "dual-mechanism memory") has ferroelectric HfZrO <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer on channel so that conductance...
Neuromorphic computing—brain-inspired computing—is considered a next-generation computing architecture that can overcome problems caused by the high cost of modern data science. Ferroelectric FETs (FeFETs) are one promising candidates for hardware implementation bio-inspired neurons. However, conventional FeFET-based neurons require considerable number device components realization inhibitory operation, or they need negative supply voltage, leading to routing costs. In this letter, novel...
A high-performance monolithic photovoltaic–thermoelectric hybrid generator with a photothermal conversion layer is introduced. The layer, thin acrylic film dyed black colored AZO dye, effectively absorbs photons in the near-infrared region. dye supports an exothermic reaction through nonradiative relaxation. was fabricated integration. thermoelectric (TE) module directly on back surface of photovoltaic (PV) without using ceramic substrate typically employed conventional TE modules, so that...
We report the feasibility of ultralow- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> amorphous boron nitride ( notation="LaTeX">$\alpha $ -BN) film as a new capping layer for copper (Cu) interconnects. -BN thin films were successfully deposited using plasma-enhanced chemical vapor deposition (PECVD) process. The CVD-grown showed -value low 2.0 at 3 nm thickness, leakage...
The dye-sensitized solar cell–thermoelectric hybrid generator (DS-TEG), which is a hybridization of cell (DSSC) and thermoelectric (TEG) not at the structural level but in terms material-level unification, presented. Pt-coated TE element provides electrons to iodide/triiodide electrolyte lower redox barrier. This promotes reduction triiodide, resulting dramatic increase electron recombination lifetime. available charge density, carrier diffusion coefficient effective length were...
Abstract To fabricate a flexible thermoelectric generator (f‐TEG) that can be applied to curvilinear surfaces such as the human body, screen‐printing technique is practical method for forming (TE) elements. One of main obstacles fabricating high‐performance screen‐printed f‐TEGs high contact resistance. In this work, output power f‐TEG increased by 80% through engineering and its formation process. Reduction ambient annealing process removes surface oxides while modulating tellurium (Te)...
Thermoelectric power generation using human body heat can be applied to wearable sensors, and various applications are possible. Because the thermoelectric generator (TEG) is highly dependent on material, research improving performance of material has been conducted. Thus far, in developing materials, researchers have focused figure merit, ZT. For a TEG placed body, however, density does not always increase as ZT increases. In this study, properties P-type BiSbTe3 were simulated for carrier...
In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as physical reservoir in computing scheme. Compared to conventional FeFET control sample, which did not show leaky behavior, the proposed leaky-FeFET neuron-based exhibited 78.6% and 62.9% improvements memory capacity for Short Term Memory (STM) Parity Check (PC) tasks, respectively. The are attributed temporal effect induced by leaky-integrating neuronal originates from retention degradation of FeFET.
We propose a single device neuron that utilizes ferroelectric layer, split gate, and truncated floating gate structure. The proposed device, named Single-Device Leaky-FeFET (SD L-FeFET), successfully emulates the neuronal dynamics for both excitatory inhibitory connections while reducing standby power by eliminating tail current. A spiking neural network (SNN) using newly developed SD L-FeFET shows MNIST handwriting digit pattern recognition of 92.5% face 91.7%, which is comparable...
We demonstrated that channel mobility and cell current could be increased through Ge diffusion engineering H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> plasma treatment in a poly-Si channel. Even though the has higher intrinsic than Si channel, typical poly-SiGe inferior characteristics due to high interface trap density (D xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) bulk caused by Ge. propose novel technique control...
We demonstrated that polycrystalline-Si (poly-Si) channel mobility could be significantly enhanced through a combined effect of grain size engineering and Ge diffusion into the poly-Si channel. By crystallizing an amorphous-Ge/Si stack via thermal annealing, enlargement occur together, resulting in increase up to lpzrptsim100%. The improved program erase speeds by 55.8% 30.5%, respectively, with no adverse on retention endurance characteristics.