A5101609154- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Copper Interconnects and Reliability
- MXene and MAX Phase Materials
- Electrocatalysts for Energy Conversion
- Advanced Battery Materials and Technologies
- Advanced Memory and Neural Computing
- Advancements in Battery Materials
- Metal and Thin Film Mechanics
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor Lasers and Optical Devices
- Advanced ceramic materials synthesis
- Microwave Dielectric Ceramics Synthesis
- Perovskite Materials and Applications
- Silicon and Solar Cell Technologies
- Ion-surface interactions and analysis
- Fuel Cells and Related Materials
- Electrical and Thermal Properties of Materials
- Phase-change materials and chalcogenides
- Silicon Nanostructures and Photoluminescence
- Silicone and Siloxane Chemistry
- Thin-Film Transistor Technologies
Ulsan National Institute of Science and Technology
2022-2024
Institute for Basic Science
2024
Suwon Research Institute
2024
Seoul National University
1990-2014
Hydrogen fuel cells based on proton exchange membrane cell (PEMFC) technology are promising as a source of clean energy to power decarbonized future. However, PEMFCs limited by number major inefficiencies; one the most significant is hydrogen crossover. In this work, we comprehensively study effects two-dimensional (2D) materials applied anode side H2 barrier coatings Nafion reduce crossover cells, while studying adverse conductivity and catalyst performance in beginning life testing. The...
Capacitive touch screen panels (TSP) have become a prevalent use interaction method over the past decade, owing to their multi-touch capabilities and ease of use. There is great demand for sub-display outside smartphones in emerging form-factor products. When placed on outer side foldable phone, readout system more susceptible malfunctions, such as incorrect detection with wet smartphone. Therefore, shown Fig. 26.4.1 (top right), both mutual- self-capacitive sensing are essential commercial...
Abstract Nickel boride catalysts show great potential as low‐cost and efficient alternatives to noble‐metal in acidic media; however, synthesizing isolating a specific phase composition of nickel is nontrivial, issues persist their long‐term stability electrocatalysts. Here, single‐crystal boride, Ni 23 B 6 , reported which exhibits high electrocatalytic activity for the hydrogen evolution reaction (HER) an solution, that its poor can be overcome via encapsulation by trilayer hexagonal boron...
We report the feasibility of ultralow- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> amorphous boron nitride ( notation="LaTeX">$\alpha $ -BN) film as a new capping layer for copper (Cu) interconnects. -BN thin films were successfully deposited using plasma-enhanced chemical vapor deposition (PECVD) process. The CVD-grown showed -value low 2.0 at 3 nm thickness, leakage...
This study focuses on amorphous boron nitride ($\rm \alpha$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper in back-end-of-logic (BEOL) interconnects. Owing to its ultralow dielectric constant and robust properties, $\rm \alpha$-BN is examined an alternative conventional low-k dielectrics. The investigation primarily employs theoretical modeling, using Gaussian Approximation Potential, simulate understand...
Both uncontrolled Li dendrite growth and corrosion are major obstacles to the practical application of Li-metal batteries. Despite numerous attempts address these challenges, effective solutions for dendrite-free reversible electrodeposition have remained elusive. Here, we demonstrate horizontal on top atomically polarized monolayer hexagonal boron nitride (hBN). Theoretical investigations revealed that lattice configuration polarity hBN, devoid dangling bonds, reduced energy barrier surface...
The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3interfacial passivation layers, and SiO2 capping were examined. thin deposited using alternating injections the La[N{Si(CH3)3}2]3 precursor O3 La O precursors, respectively, at a substrate temperature 310 °C. concentration in was further controlled adding ALD cycles SiO2. For comparison, La2O3 also [La(iPrCp)3]...
The effects of preamorphization by As + implantation for the shallow p -n junction formation have been investigated in this study. retarded diffusion effect boron atoms due to electric field produced arsenic profile was observed during annealing. with low leakage obtained optimizing thickness preamorphized layer.
Low resistive tungsten (LRW) interconnects using CVD-W films deposited on B <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> H xmlns:xlink="http://www.w3.org/1999/xlink">6</inf> -reduced W nucleation layers have been successfully developed for FEOL application of sub-50nm dynamic random access memory (DRAM). LRW poly-metal gate showed excellent oxide integrity, low sheet resistance, parasitic capacitance, and transistor performances such...
Al-plug process using chemical vapor deposited (CVD) Al seed layer prepared with trimethylaminealane borane (TMAAB) as a precursor lias been developed for sub-60 mn design-rule dynamic random access memory (DRAM). In terms of the stability and particle generation performance, TMAAB is better compared to methylpyrrolidine alane (MPA) due depression (AIH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> )...