A5041770750- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Neural Networks and Reservoir Computing
- Conducting polymers and applications
- Advanced Data Storage Technologies
- 3D IC and TSV technologies
- Organic Light-Emitting Diodes Research
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Nanofabrication and Lithography Techniques
- Advanced Sensor and Energy Harvesting Materials
- Silicon Nanostructures and Photoluminescence
- Organic Electronics and Photovoltaics
- Magnetic properties of thin films
- Advanced Surface Polishing Techniques
- Perovskite Materials and Applications
- Nonlinear Dynamics and Pattern Formation
- Phase-change materials and chalcogenides
Korea Advanced Institute of Science and Technology
2020-2025
The rapid decrease in interconnect Critical Dimensions (CDs) within logic devices and growth the contact height of 3D memory have led to increased contact/via plugs resistance. In this study, we introduce an approach reduce resistance by engineering grain size using Nanosecond Green Laser Annealing (NGLA) with a low energy fluence (= 0.1 J/cm2). Because proximity between adjacent W plugs, diffraction laser light can occur which will help be absorbed sidewall plugs. addition, difference...
Abstract Hybrid organic‐inorganic polymeric films are widely used in various areas, for encapsulation, dielectrics, super‐hydrophobic surfaces, membranes, and other applications, because of the features their organic inorganic components. The initiated chemical vapor deposition (iCVD) process is developed to synthesize hybrid via this approach. However, conventional iCVD based on laminar injection, has difficulty depositing with uniform thickness composition over large areas required by...
Abstract To achieve the low power operation required by various high performance flexible electronics, such as switching and memory devices, advanced gate dielectrics should be ultra‐thin, flexible, with leakage current. Organic–inorganic hybrid are proposed to realize this combination of attributes, where organic matrix contributes outstanding mechanical flexibility inorganic component provides electrical characteristics. Among candidate components, HfO x TiO particularly attractive because...
Abstract With the recent interest in data storage flexible electronics, highly reliable charge trap‐type organic‐based non‐volatile memory (CT‐ONVM) has attracted much attention. CT‐ONVM should have a wide window, good endurance, and long‐term retention characteristics, as well mechanical flexibility. This paper proposed devices consisting of band‐engineered organic–inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The poly(1,3,5‐trimethyl‐1,3,5,‐trivinyl...
Abstract One of the essential components in this era Internet Things (IoT) and wearable technologies, is a flexible high performance resistive random access memory (ReRAM) device. In paper, authors propose new copolymer‐based ReRAM device that realized using an initiated chemical vapor deposition (iCVD) process. The 7‐nm‐thick copolymer exhibits endurance properties as 10 5 switching power low 438 µW. strong originates from robust poly‐1,3,5‐trivinyl‐trimethyl‐cyclotrisiloxane dielectric...
Abstract Resistive random‐access memory (ReRAM) has been considered for future devices, because of its low‐power consumption and a high degree integration. In this study, hybrid (H‐) ReRAM devices are proposed using ultra‐thin ( < 10 nm) Al, Hf, Zr films prepared via initiated chemical vapor deposition (iCVD). The homogeneously consist organic inorganic components, which allow simultaneous metal atoms migration oxygen vacancy generation. Regardless matrix, H‐ReRAMs show highly reliable...
In this work, we demonstrated 3D sequential complementary field-effect-transistor (CFET) by direct wafer bonding (DWB) technique and a low-temperature process for monolithic 3D(M3D) integration using high-performance top Ge (110)/<110> channel on bottom Si CMOS. Here, the maximum thermal budget was up to 400°c during fabrication of FET, allowing heterogenous Ge/Si CFET without damage FETs. Furthermore, systematically investigated mobility enhancement orientation in thin (110) nanosheet pFET....
Monolithic 3-D (M3D) integration has been spotlighted as an approach to overcome the limitation of classical scaling in integrated circuits (IC). However, fabrication top-tier devices M3D is challenging because limited maximum thermal budget during process. In this work, a nanosecond annealing process using pulsed green laser introduced fabricate and minimize influence on bottom-tier devices. With laser, average temperature gradient along vertical direction within was reduced much 26%,...
In this study, we report on the fabrication and characterization of 3-D sequential complementary field-effect-transistors (CFETs) using direct wafer bonding (DWB) technology a low-temperature process for monolithic (M3D) integration. The device features high-performance top Ge (110)/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\langle 110\rangle $ </tex-math></inline-formula> channel bottom Si CMOS. To...
We demonstrated that channel mobility and cell current could be increased through Ge diffusion engineering H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> plasma treatment in a poly-Si channel. Even though the has higher intrinsic than Si channel, typical poly-SiGe inferior characteristics due to high interface trap density (D xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) bulk caused by Ge. propose novel technique control...
We demonstrated that polycrystalline-Si (poly-Si) channel mobility could be significantly enhanced through a combined effect of grain size engineering and Ge diffusion into the poly-Si channel. By crystallizing an amorphous-Ge/Si stack via thermal annealing, enlargement occur together, resulting in increase up to lpzrptsim100%. The improved program erase speeds by 55.8% 30.5%, respectively, with no adverse on retention endurance characteristics.
Low-Power Wearable Electronics In article number 2100375, Byung Jin Cho and co-workers demonstrated a novel copolymer-based flexible ReRAM device with low switching power forming-free characteristics for low-power wearable electronics. The copolymer is composed of 2-hydroxyethyl methacrylate (HEMA) 1, 3, 5 trivinyltrimethyl-cyclotrisiloxane (V3D3), fabricated via initiated Chemical Vapor Deposition (iCVD), vapor-phase synthesis.
Front Cover: In article number 2000608 by Byung Jin Cho and co-workers, hybrid organic–inorganic polymeric films are uniformly, conformally, homogeneously synthesized on a large area using newly designed initiated chemical vapor deposition (iCVD) process with dual shower head injection structure.
In this work, we first investigated the electrical and heat dissipation characteristics during operation of top devices in a 3D sequential complementary field-effect transistors (CFETs) with Ge channel as devices. The investigation was carried out different inter-layer dielectric (ILD) thicknesses: 70 nm, 210 1.4 μm. As ILD thickness became thinner, observed higher body factor. This scaling resulted improved performance inverter gain maximum frequency (f <inf...