A5102009599- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- 2D Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- High-Voltage Power Transmission Systems
- Neuroscience and Neural Engineering
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- HVDC Systems and Fault Protection
- Power Systems and Renewable Energy
- Radio Frequency Integrated Circuit Design
- Photoreceptor and optogenetics research
- Graphene research and applications
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Acoustic Wave Resonator Technologies
- Advanced Antenna and Metasurface Technologies
- Power System Optimization and Stability
- Analog and Mixed-Signal Circuit Design
- Tactile and Sensory Interactions
- Nanowire Synthesis and Applications
- Aerogels and thermal insulation
Shanghai University
2023-2024
Hunan Xiangdian Test Research Institute (China)
2015-2024
State Grid Hunan Electric Power Company Limited
2020-2024
Beijing Microelectronics Technology Institute
2024
Beijing Institute of Technology
2021-2024
Lanzhou Jiaotong University
2024
National Chung Hsing University
2019-2023
Ocean University of China
2022-2023
Wilson College
2022-2023
North Carolina State University
2022-2023
Abstract Tunability and stability in the electrical properties of 2D semiconductors pave way for their practical applications logic devices. A robust layered indium selenide (InSe) field‐effect transistor (FET) with superior controlled is demonstrated by depositing an (In) doping layer. The optimized InSe FETs deliver unprecedented high electron mobility up to 3700 cm 2 V −1 s at room temperature, which can be retained 60% after 1 month. Further insight into evolution position Fermi level...
Abstract Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as artificial synapse device level that benefits from boosted charge trapping under ambient conditions. A thin InO x layer confirmed channel, which can serve effective for information storage. The dynamic characteristic measurement...
Reliable energy modules and higher-sensitivity, higher-density, lower-powered sensing systems are constantly required to develop wearable electronics the Internet of Things technology. As an emerging technology, triboelectric nanogenerators have been potentially guiding landscape sustainable power units energy-efficient sensors. However, existing series is primarily populated by polymers rubbers, limiting plasticity some extent owing their stiff surface electronic structures. To enrich...
Metal-insulator-metal (MIM) capacitors with different HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thickness have been investigated. The results show that both the capacitance density and voltage coefficients of (VCCs) increase decreasing thickness. In addition, it is found VCCs decrease logarithmically increasing Furthermore, MIM capacitor 10-nm shows a record high 13 fF/μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...
The enhanced light-harvesting capacity and effective separation of photogenerated carriers in fantastic hierarchical heterostructures enjoy striking attention for potential applications the field solar cells photocatalysis. A three-dimensional (3D) dandelion-shaped Bi2S3 microsphere compactly decorated with wing-shaped few layered MoS2 lamella (D-BM) was fabricated via a facile hydrothermal self-assembly process. Especially, polyethylene glycol (PEG) has been proven as vital template to form...
Flexible pressure sensors with high stretchability, sensitivity, and stability are undoubtedly urgently required for potential applications in intelligent soft robots, human-machine interaction, health monitoring, other fields. However, most current flexible unable to endure large deformation prone performance degradation or even failure during frequent operation due their multilayered structures. Here, we propose a stretchable all-nanofiber iontronic sensor that is composed of ionic...
Abstract Complementary circuits based on 2D materials show great promise for next‐generation electronics. An ambipolar all‐2D ReSe 2 field‐effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence noise measurements. Ambipolar transfer achieved owing to the tunable Fermi level of graphene contact negligible 30 meV Schottky barrier heights n‐ p‐channel regimes, respectively....
The imperative for continuous device miniaturization has heightened the need logic reconfigurability due to its benefits in circuit design simplification and process optimization. Van der Waals ambipolar transistors, notable their inherent reconfigurable characteristics, have garnered significant interest potential revolutionize information electronics. Nevertheless, as semiconductor thickness approaches 3-nm mark, precise modulation of electrical polarity presents a considerable challenge...
<title>Abstract</title> <bold>Objective </bold>To investigate the mediating effects of family care and psychological resilience in relationship between social support self-reported burden among patients undergoing peritoneal dialysis (PD), to establish foundation for development interventions aimed at alleviating their perceived burden. <bold>Methods </bold>A convenience sample 539 PD was recruited from nephrology departments four hospitals Shanghai January September 2024. Data were...
Abstract Electronics based on layered indium selenide (InSe) channels exhibit promising carrier mobility and switching characteristics. Here, an InSe tribotronic transistor (denoted as w/In T‐FET) obtained through the vertical combination of In‐doped triboelectric nanogenerator is demonstrated. The T‐FET can be operated by adjusting distance between two triboelectrification layers, which generates a negative electrostatic potential that serves gate voltage to tune charge transport behavior...
Metal-insulator-metal (MIM) capacitors with (HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> )/sub 1-x/(Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> x/ high-/spl kappa/ dielectric films were investigated for the first time. The results show that both capacitance density and voltage/temperature coefficients of (VCC/TCC) values decrease increasing Al mole fraction. It was demonstrated MIM capacitor an fraction 0.14 is...
The optical properties of aluminum-doped zinc oxide (AZO) thin films were calculated rapidly and accurately by point-by-point analysis from spectroscopic ellipsometry (SE) data. It was demonstrated that there two different physical mechanisms, i.e., the interfacial effect crystallinity, for thickness-dependent permittivity in visible infrared regions. In addition, a blue shift effective plasma frequency AZO when thickness increased, did not exist ultrathin (< 25 nm) region, which could be...
Abstract Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique properties and functions. Doping‐induced conversion of conductive polarity is particularly beneficial optimizing integration layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe 2 ) transistor demonstrated by manipulating its adatom‐vacancy groups. The underlying mechanisms, which originate from reversible...