A5057651666- Chalcogenide Semiconductor Thin Films
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- ZnO doping and properties
- Graphene research and applications
- Solid-state spectroscopy and crystallography
- Semiconductor Quantum Structures and Devices
- MXene and MAX Phase Materials
- Ga2O3 and related materials
- Phase-change materials and chalcogenides
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Advanced Memory and Neural Computing
- Advanced Photocatalysis Techniques
- Quantum and electron transport phenomena
- Molecular Junctions and Nanostructures
- Nanowire Synthesis and Applications
- Advanced Thermoelectric Materials and Devices
- GaN-based semiconductor devices and materials
- Crystal Structures and Properties
- Advancements in Semiconductor Devices and Circuit Design
National Taiwan University of Science and Technology
2016-2025
National Science and Technology Council
2023-2024
National Cheng Kung University
2003-2020
National Kaohsiung University of Science and Technology
2019
Tainan University of Technology
2013-2015
National Dong Hwa University
2002-2010
National Taipei University of Technology
1997
Texas A&M University
1996
National Central University
1995
Augusta University
1980-1982
Abstract Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS 2 ) flakes with unique distorted 1T structure, in-plane properties. We fabricated monolayer few-layer ReS field-effect...
Rhenium disulfide (ReS2) and diselenide (ReSe2), the group 7 transition metal dichalcogenides (TMDs), are known to have a layered atomic structure showing an in-plane motif of diamond-shaped-chains (DS-chains) arranged in parallel. Using combination transmission electron microscopy transport measurements, we demonstrate here direct correlation anisotropy single-layered ReS2 with orientation DS-chains, as also supported by our density functional theory calculations. We further show that...
In search of high-performance field-effect transistors (FETs) made atomic thin semiconductors, indium selenide (InSe) has held great promise because its high intrinsic mobility and moderate electronic band gap (1.26 eV). Yet the performance InSe FETs is decisively determined by surface oxidation taking place spontaneously in ambient conditions, setting up a ceiling causing an uncontrollable current hysteresis. Encapsulation hexagonal boron nitride (h-BN) been currently used to cope with this...
Recently, rhenium disulfide (${\mathrm{ReS}}_{2}$) monolayers were experimentally extracted by conventional mechanical exfoliation technique from as-grown ${\mathrm{ReS}}_{2}$ crystals. Unlike the well-known members of transition metal dichalcogenides (TMDs), crystallizes in a stable distorted-$1T$ structure and lacks an indirect to direct gap crossover. Here we present experimental theoretical study formation, energetics, stability most prominent lattice defects monolayer...
Abstract Tunability and stability in the electrical properties of 2D semiconductors pave way for their practical applications logic devices. A robust layered indium selenide (InSe) field‐effect transistor (FET) with superior controlled is demonstrated by depositing an (In) doping layer. The optimized InSe FETs deliver unprecedented high electron mobility up to 3700 cm 2 V −1 s at room temperature, which can be retained 60% after 1 month. Further insight into evolution position Fermi level...
Abstract Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as artificial synapse device level that benefits from boosted charge trapping under ambient conditions. A thin InO x layer confirmed channel, which can serve effective for information storage. The dynamic characteristic measurement...
Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family materials characterized by weak interlayer coupling and distorted 1T structure. Here, we report on electrical transport study mono- multilayer ReS2 with polymer electrolyte gating. We find that conductivity monolayer completely suppressed at high carrier densities, an unusual feature unique to monolayers, making first example such material. While thicker flakes also exhibit dome...
The α-phase Bi(2)O(3) (α-Bi(2)O(3)) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. understanding fundamental optical property α-Bi(2)O(3) important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven vapor-liquid-solid mechanism Si substrate. High-resolution transmission electron microscopy Raman measurement...
We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic Zn nanospheres. The chemical properties, crystalline structures photoluminescence mechanisms for the nanospheres, are presented. PL emissions of mainly dependent on electron transitions between Fermi level (EF) 3d band, while those ascribed near band edge (NBE) deep transitions. attributed across junction, EF valence bands...
Manipulating electronic polarizations such as ferroelectric or spin has recently emerged an effective strategy for enhancing the efficiency of photocatalytic reactions. This study demonstrates control modulated by and magnetic approaches within a two-dimensional (2D) layered crystal copper indium thiophosphate (CuInP2S6) to boost reduction CO2. We investigate substantial influence polarization on CO2 efficiency, utilizing ferroelectric-paraelectric phase transition alignment through...
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal with the sizes 10s 100s micrometers were synthesized and prepared by chemical vapor transport method using ICl3 as a agent. Many vacancies imperfection states have found bulk on microplate because intrinsic defect nature α-In2Se3. To discover physical properties finding technological uses α-In2Se3, several experiments including transmission...
2D black phosphorus (BP) and rhenium dichalcogenides (ReX2 , X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired novel applications in electronics, photonics, optoelectronics. Different BP with poor environmental stability, ReX2 low-symmetry distorted 1T structures excellent stability. In the electronic structure is weakly dependent on layer numbers, restricts property tunability device applications. Here,...
Recently bendable and flexible optoelectronics have attracted more attentions on display technology concaved or curvy photovoltaic devices owing to the flexibility softy in layered materials. The bending photoluminescence (BPL) surface effect of a thin multilayer InSe 2D crystal are demonstrated here by using PL photovoltage (SPV) experiments. BPL result ( t ≈ 30 nm) shows an enhancement light intensity with respect that other flat measurement spreading emission solid angle for irradiant...
Multilayer InSe with a thickness above ∼20 nm, is direct semiconductor peak absorption wavelength approaching λ = 1000 which promising candidate for solar-energy conversion and 2D optoelectronics devices. We present herein the experimental observations of thickness-dependent conductivity photoconductive-responsivity spectrum in multilayer as well optically enhanced transconductance gain metal-semiconductor-field-effect transistor (MESFET) illuminated by halogen lamp. The voltage-current...
Among the family of TMDs, ReS2 takes a special position, which crystalizes in unique distorted low-symmetry structure at ambient conditions. The interlayer interaction is rather weak, thus its bulk properties are similar to that monolayer. However, how does compression change and electronic unknown so far. Here using ab initio crystal searching techniques, we explore high-pressure phase transitions extensively predict two new phases. pressure transforms "distorted-1T" very low then...
A bias-selectable photodetector, which can sense the wavelength of interest by tuning polarity applied bias, is useful for target discrimination and identification applications. So far, those detectors are generally based on back-to-back photodiode configuration via exploiting epitaxial semiconductors as optoelectronic materials, inevitably lead to high fabrication costs complex device architectures. Here, we demonstrate that our band-engineered van der Waals heterostructures be...
Optical properties of GaS layered semiconductor have been characterized using temperature-dependent absorption and piezoreflectance (PzR) measurements in the temperature range between 15 300K. From comparison optical-absorption PzR spectra at low temperature, gallium sulfide layer was confirmed to be an indirect semiconductor. The band gap determined 2.53±0.03eV room temperature. were carried out energy 2 5eV. low-temperature spectrum obviously shows three doublet-excitonic structures...
β‐Ga 2 O 3 nanobelts have been synthesized by a vapor transport process under different ambient oxygen. Their structural and optical properties were characterized field‐emission scanning electron microscopy, X‐ray diffraction, photoluminescence (PL), absorbance measurements. Structural characterization revealed that the as‐synthesized samples consist of monoclinic with comparable surface area. Samples prepared high oxygen possessed large numbers gallium‐associated defects confirmed PL The...
Direct optical evidence of Burstein–Moss shift (BMS) in conduction band cubic c-In2O3 nanowires is reported herein. The property degenerate semiconducting oxide has been investigated by thermoreflectance (TR) spectroscopy. Low-temperature TR spectra clearly show a series band-edge excitons for c-In2O3. threshold energy the exciton was determined. One transition feature direct gap caused BMS detected all from 20 to 300 K. Femi-level (EF) above conduction-band edge (EC) determined be EF – EC ≈...
β-In2S3 is a nontoxic window layer material usually used in thin-film solar cell. Transition metal (TM)-incorporated In2S3 has been proposed to promote conversion efficiency because multi-photon absorption by an intermediate band (IB) would happen the sulfide. In this paper, band-edge and photoelectric-conversion properties of Nb-substituted have probed thermoreflectance (TR), photoconductivity (PC), photo–voltage–current (Photo V–I) measurements. The crystals niobium-incorporated with...
A photodetector using a two-dimensional (2D) low-direct band gap indium selenide (InSe) nanostructure fabricated by the focused ion beam (FIB) technique has been investigated. The FIB-fabricated InSe photodetectors with low contact resistance exhibit record high responsivity and detectivity to ultraviolet visible lights. optimal up 1.8 × 107 W–1 1.1 1015 Jones, respectively, are much higher than those of other 2D material-based photoconductors phototransistors. Moreover, inherent...