A5061940003- Graphene research and applications
- 2D Materials and Applications
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
- Thermal Radiation and Cooling Technologies
- Radio Frequency Integrated Circuit Design
- Metamaterials and Metasurfaces Applications
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Molecular Junctions and Nanostructures
- Photonic and Optical Devices
- MXene and MAX Phase Materials
- Mechanical and Optical Resonators
- Photonic Crystals and Applications
- Quantum and electron transport phenomena
- Carbon Nanotubes in Composites
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Electrostatic Discharge in Electronics
- Transition Metal Oxide Nanomaterials
- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Semiconductor Lasers and Optical Devices
- Silicon Nanostructures and Photoluminescence
Taiwan Semiconductor Manufacturing Company (Taiwan)
2003-2025
National Taiwan University
2012-2023
Stanford University
2019-2022
IBM (United States)
2022
IBM Research - Thomas J. Watson Research Center
2017-2020
National Taiwan Normal University
2020
J.A. Woollam Company (United States)
2020
National Tsing Hua University
2017-2019
Taiwan Semiconductor Manufacturing Company (United States)
2004
General Electric (United States)
1993
In search of high-performance field-effect transistors (FETs) made atomic thin semiconductors, indium selenide (InSe) has held great promise because its high intrinsic mobility and moderate electronic band gap (1.26 eV). Yet the performance InSe FETs is decisively determined by surface oxidation taking place spontaneously in ambient conditions, setting up a ceiling causing an uncontrollable current hysteresis. Encapsulation hexagonal boron nitride (h-BN) been currently used to cope with this...
A unique "clean-lifting transfer" (CLT) technique that applies a controllable electrostatic force to transfer large-area and high-quality CVD-grown graphene onto various rigid or flexible substrates is reported. The CLT without using any organic support adhesives can produce residual-free films with processability, has great potential for future industrial production of graphene-based electronics optoelectronics. As service our authors readers, this journal provides supporting information...
Recent discoveries of the photoresponse molybdenum disulfide (MoS2) have shown considerable potential these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among various types photoresponses MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study PPC effect and its mechanism in MoS2 is still not available, despite importance this on material. Here, we present systematic monolayer conclude that can be...
Abstract Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage the materials on substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed fabricate large-grain, continuous MoS 2 films. An intermediate liquid phase-Na Mo O 7 formed through eutectic MoO 3 and NaF, followed by being sulfurized into . The as-formed seeds function as...
This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated layers of titanium suboxide (TiOx) thin films, which are amorphous phase crystalline TiO2 and can be solution processed. The nonstoichiometry TiOx films consisting a large number oxygen vacancies exhibit several unique functions simultaneously in the as efficient electron-donating agent, effective dielectric screening medium, also...
Graphene, with cracks filled gold nanoparticles, is grown by chemical vapor deposition on a Cu substrate. The crack-filled graphene not only exhibits superior electrical properties but also forms better junction other semiconductors. A high-quality graphene/Si Schottky solar cell achieved, demonstrating the highest fill factor (0.79) and best efficiency (12.3%).
We show that packed, horizontally aligned films of single-walled carbon nanotubes are hyperbolic metamaterials with ultrasubwavelength unit cells and dynamic tunability. Using Mueller matrix ellipsometry, we characterize the films' optical properties, which doping level dependent, find a broadband region tunable in mid-infrared. To dispersion in-plane plasmon modes, etch nanotube into nanoribbons differing widths orientations relative to axis, observe modes support strong light localization....
Proving the device performance and process feasibility is imperative for realization of two-dimensional (2D) semiconductor electronics. In this work, we have successfully adopted Tin (Sn) as Ohmic contact metal to monolayer molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD) demonstrated superior short channel n-type field effect transistor (nFET) reaching an ON-current 480 μA/μm keeping OFF-current below 0.1 nA/μm at VDS = 1 V. These efforts are close low power...
Because of the intrinsic low carrier density monolayer two-dimensional (2D) materials, doping is crucial for performance underlap top-gated 2D devices. However, wet etching a high-k (dielectric constant) dielectric layer difficult to implement without causing deterioration on devices; therefore, finding suitable spacer technique devices indispensable. In this study, we developed remote (RD) method in which defective SiOx can remotely dope underlying capped regions directly contacting these...
In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices OTS SAM-functionalized high carrier mobility, low intrinsic doping, suppressed scattering, reduced thermal activation resistivity at room temperature were observed. Most interestingly, remarkable pronounced quantum Hall effect, strong...
This work presents an ultrahigh gain InSe-based photodetector by using a novel approach called the surface oxidation doping (SOD) technique. The carrier concentration of multilayered two-dimensional (2D) InSe semiconductor has been modulated controlling formation oxide layer. SOD through charge transfer at interface oxide/2D heterostructure can lead to creation vertical built-in potential and band bending as result distribution gradient. internal electric field caused gradient in layers...
Low-dimensional plasmonic materials can function as high quality terahertz and infrared antennas at deep subwavelength scales. Despite these antennas' strong coupling to electromagnetic fields, there is a pressing need further strengthen their absorption. We address this problem by fabricating thick films of aligned, uniformly sized carbon nanotubes showing that plasmon resonances are strong, narrow, broadly tunable. With thicknesses ranging from 25 250 nm, our exhibit peak attenuation...
Because of the lack contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in regions. In present study, we used chloroauric acid (HAuCl4) as a strong p-dopant WSe2 monolayers transistors. The HAuCl4-doped exhibited record-low resistance 0.7 kΩ·μm under concentration 1.76 × 1013 cm-2. addition, an extrinsic carrier diffusion phenomenon was discovered HAuCl4-WSe2...
Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process achieving robust 2D electronics lacking. Here, we developed two-step method effectively materials through defect-repairing process. The achieves strong and hysteresis-free suitable use with most widely used transition-metal dichalcogenides. Through our method, achieved record-high sheet conductance (0.16 mS·sq-1 without gating) monolayer MoS2 high mobility carrier...
The development of p-type WSe2 transistors has lagged behind n-type MoS2 because challenges in growing high-quality, large-area films. This study employs an alkali-assisted CVD (AACVD) method by using KOH to enhance nucleation on sapphire substrates, effectively promoting monolayer growth c-plane and enabling controlled bilayer seeding miscut surfaces with artificial steps. With AACVD, we achieve 2-inch centimeter-scale films defect densities as low 1.6 × 1012 cm−2 (monolayer) 1.8 (bilayer),...
A record-high efficiency (>10%) was achieved for an n-graphene/p-Si Schottky junction solar cell by using the “sunlight-activated” graphene/TiO<sub>x</sub> transparent cathode.
Significance Carbon nanotubes, each a cylindrical nanocrystal of carbon atoms, can be crystallized into monolithic, two-dimensionally ordered films through simple vacuum filtration technique. A particularly fascinating property these nanotube is that they function as unique type antenna whose excitations comprise intrinsically ultrastrongly coupled plasmons and excitons. This intrinsic coupling contrasts to the many existing demonstrations strongly hybrid systems, in which emitters are...
Low resistance contact technology for 2D semiconductors is a key bottleneck the practical application of channel materials at advanced logic nodes. This work presents novel Sb-Pt modulated which can alleviate Fermi-level pinning effect and mediate band alignment metal-2D semiconductor interface, leading to exceptional ohmic contacts both p-type n-type WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FETs (p/n FET). with different...
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as result of trap-state-mediated charge transfer is demonstrated, which much higher than any other reported photodoping techniques. Based on the strong light–matter interactions heterostructure, controlled bandgap opening bilayer graphene device demonstrated. As service to our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed...
InSe is a high-mobility layered semiconductor with mobility being highly sensitive to any surrounding media that could act as source of extrinsic scattering. However, little effort has been made understand electronic transport in thin layers native surface oxide formed spontaneously upon exposure an ambient environment. Here, we explore the influence InOx/InSe interfacial trap states on layers. We show wet oxidation (processed environment) causes massive deep-lying band-tail states, through...
A novel organic/graphene/inorganic heterostructure, consisting of a graphene layer encapsulated by n- and p-type photoactive materials with complementary absorptions, enables the control dual p-typed transport behaviors transistor under selective UV or visible light illumination. graphene-based p-n junction created spatially patterned wavelength-selective illumination using heterostructure is also demonstrated. As service to our authors readers, this journal provides supporting information...
In this article, we propose a novel approach to demonstrate tunable photoinduced carrier transport of few-layered black phosphorus (BP) field-effect transistor (FET) with extended air stability using "light-sensitized ultrathin encapsulated layer". Titanium suboxide (TiOx) film (approximately 3 nm), which is an amorphous phase crystalline TiO2 and can be solution processed, simultaneously exhibits the unique dual functions passivation doping on BP FET. The electron transfer at TiOx/BP...
Mueller matrix ellipsometry over the wide spectral range from mid-IR to UV is applied characterize dielectric function tensor for films of densely packed single-walled carbon nanotubes aligned in surface plane. These optically act as metamaterials with an in-plane anisotropic, bulk effective medium response. A parameterized oscillator model developed describe electronic interband transitions, π−π⋆ plasmon resonances, and free-carrier absorption. Wide ranges hyperbolic dispersion are observed...
We introduce and experimentally demonstrate a new class of electrically driven thermal emitter based on globally aligned carbon nanotube metamaterials patterned as nanoscale ribbons. The metamaterial ribbons exhibit electronic photonic properties with extreme anisotropy, which enable low loss, wavelength-compressed hyperbolic modes along one axis high electrical resistivity efficient Joule heating the other axis. Devices batch-fabricated single chip emit linearly polarized radiation peak...