A5056112055- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Metal and Thin Film Mechanics
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Material Properties and Failure Mechanisms
- ZnO doping and properties
- Analog and Mixed-Signal Circuit Design
- Advancements in Battery Materials
- Silicon Carbide Semiconductor Technologies
- Molecular Junctions and Nanostructures
- Carbon Nanotubes in Composites
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- Topological Materials and Phenomena
- Advanced Sensor and Energy Harvesting Materials
- Advanced Thermoelectric Materials and Devices
- Numerical methods in engineering
Taiwan Semiconductor Manufacturing Company (Taiwan)
2019-2024
National Taiwan University
2017-2021
IBM (United States)
2004
New York Proton Center
2002
Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) scalable for fabrication but notorious their high defect densities. Therefore, innovative endeavors on growth reaction enhance quality urgently needed. Here, we report that the hydroxide W species, an extremely pure phase precursor form, is very efficient...
Antimony (Sb) semimetal was studied as a novel contact approach for enabling two-dimensional (2D) material towards advanced electronic device applications. With this approach, an ohmic of close to zero Schottky barrier height and resistance value 0.66 kΩ.µm is obtained between Sb monolayer (1L) molybdenum disulfide (MoS2). Short-channel Sb-contacted MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> field-effect transistors (FET)...
Abstract In this work, graphene-methylammonium lead iodide (MAPbI 3 ) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 10 7 A W −1 and detectivity 2 15 Jones achieved, with extremely high effective quantum efficiencies about 8 % in the visible range (450–700 nm). This excellent performance is attributed to ultra-flat films grown on graphene sheets. The structure covered uniform has exciton separation ability under...
Proving the device performance and process feasibility is imperative for realization of two-dimensional (2D) semiconductor electronics. In this work, we have successfully adopted Tin (Sn) as Ohmic contact metal to monolayer molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD) demonstrated superior short channel n-type field effect transistor (nFET) reaching an ON-current 480 μA/μm keeping OFF-current below 0.1 nA/μm at VDS = 1 V. These efforts are close low power...
Recent technology development of logic devices based on 2-D semiconductors such as MoS2, WS2, and WSe2 has triggered great excitement, paving the way to practical applications. Making low-resistance p-type contacts remains a critical challenge. The key addressing this challenge is find high-work function metallic materials which also introduce minimal metal-induced gap states (MIGSs) at metal/semiconductor interface. In work, we perform systematic computational screening novel their...
Abstract In recent years, bismuth iodide (BiI 3 ), a layered metal halide semiconducting light absorber with wide bandgap of ≈1.8 eV and strong optical absorption in the visible region, has received greater attention for photovoltaic applications. this study, ultrasensitive visible‐light photodetectors graphene/BiI vertical heterostructures are achieved by van der Waals epitaxies. The BiI films deposited on graphene show flatter morphologies significantly better crystallinities than that SiO...
Low resistance contact technology for 2D semiconductors is a key bottleneck the practical application of channel materials at advanced logic nodes. This work presents novel Sb-Pt modulated which can alleviate Fermi-level pinning effect and mediate band alignment metal-2D semiconductor interface, leading to exceptional ohmic contacts both p-type n-type WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FETs (p/n FET). with different...
We demonstrate the highest nFET current of 390 μA/μ m at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 1 based on CVD Mos xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> mono layers without intentional doping. The transistor exhibits good subthreshold swing 109 V/ decade, large ION/IOFF ratio 4 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> , and nearly zero DIBL. high on-current achieved in monolayer is mainly...
Herein, we propose a novel approach for area-selective tunable growth of uniform monolayer or bilayer WS2 on dielectric substrates through in situ conversion predeposited W metal pad to WOx initially and then mono- bilayers. Compared with the various transfer methods that have been used previously multilayer stacking, this direct-growth method has advantages producing cleaner interfaces capability growing layers target substrates, thereby making it more suitable manufacturing processes. The...
A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS ). Bi serves as a gently adhesive template 2D materials, introducing minimal additional defects during process. Based on materials processed using this new method, semimetal-contacted (Bi Sb)...
Abstract Materials keeping thickness in atomic scale but extending primarily lateral dimensions offer properties attractive for many emerging applications. However, compared to crystalline counterparts, synthesis of atomically thin films the highly disordered amorphous form, which avoids nonuniformity and defects associated with grain boundaries, is challenging due their metastable nature. Here we present a scalable solution-based strategy prepare large-area, freestanding quasi-2D carbon...
We develop a novel metal contact approach using an antimony (Sb)–platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition dichalcogenide channels. This strategy allows for control over the transport polarity monolayer WSe2 devices. By adjustment of Sb interfacial layer thickness from 10 30 nm, effective work function contact/WSe2 interface can be tuned 4.42 eV (p-type) 4.19 (n-type), enabling selectable n-/p-FET operation enhancement mode. The shift is linked Sb–Se bond...
Low-resistance p-type contacts to two-dimensional (2D) semiconductors remains a critical challenge towards the industrial application of 2D channel materials in advanced logic technology. To address this challenge, we computationally screen and identify designs for ultralow-resistance such as WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> by combining ab initio density-functional-theory (DFT) quantum device simulations. Two new...
Two-dimensional (2D) transition metal dichalcogenide (TMD) materials are regarded as promising channel candidates for extreme contacted gate pitch (CGP) scaling. However, basic demonstration of the modules required to build logic devices is limited. For first time, we demonstrate comparable n-type and p-type high-performance on 2D transistors. Translation 300 mm wafer processing tested by die-by-die transfer material. The fabrication preserves a relatively high mobility 30 cm <sup...
One-dimensional contact (so-called edge contact) to monolayer 2D materials has been proposed for ultimate transistor scaling but reported on-state currents are much lower than those from top devices. Experiments in this work reveal that the fabrication processes metal MoS2 strongly affect electrical characteristics such as Schottky barrier height. Using in-situ etching and deposition, we obtained Fermi-level pinning-free Ni-MoS2 Moreover, it reaches highest current among TMDs devices...
Two-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact them has been challenging, which tremendously limit the transistor performance. In this paper, we review recent research progress on elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced (MIGS). Specifically, an oxygen passivation method a semimetallic technology were developed reduce DIGS MIGS,...
Thermally stable dual work function metal gates are demonstrated using a conventional CMOS process flow. The gate structure consists of poly-Si/metal nitrides (MN/sub x/) SiON (or high-k)/Si stack with atomic layer deposition (ALD)-TaN/sub x/ for the NFET and ALD-WN/sub PFET. Much enhanced drive current (I/sub d/) transconductance (G/sub m/) values, reduced off off/) characteristics were attained ALD-MN/sub gated devices over control poly-Si PVD-MN/sub within controllable V/sub t/ shifts....
High performance carbon nanotube (CNT) network transistors with on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ) of <; 250 Ω are successfully integrated as back-end-of-the-line (BEOL) power gating devices onto Si CMOS wafers manufactured using 28-nm process technology. When the supply is connected through BEOL CNT header array, front-end-of-the-line (FEOL) ring oscillators (ROs) achieve a similar quiescent current (I...
Achieving low contact resistance between graphene and metals is crucial to the further development of high-performance field effect transistors. Increasing number conduction modes key issue in improving metals. This study characterized work function metal contacts using situ thermal evaporation ultraviolet photoelectron spectroscopy. Silver produces weak n-type doping gold heavy p-type graphene. The use a polymer-free transfer method double electrode structure produced with value 352.8 Ω ·...
In this work, we report a simple method for solution-processed organic light emitting devices (OLEDs), where single-layer graphene acts as the anode and hexa-peri-hexabenzocoronene exfoliating agent (HBC-6ImBr) provides surface modification. SEM images, PEDOT:PSS solution fully covered electrode after coating with HBC-6ImBr. The fabricated OLEDs showed outstanding brightness at 3182 cd/m2 current efficiency up to 6 cd/A which is comparable that of indium tin oxide films, OLED device...
We describe a circuit-based model of charging damage, in which the plasma characteristics are modeled with simple equations, and devices on wafer standard FET compact models. A circuit solver is then used to determine nodal potentials currents. first use this approach for bulk technology illustrate some aspects model, examining oxide thicknesses 2.3 nm, 3.5 6.8 nm. apply understand an SOI technology, where interconnections may be quite complex all nodes independent substrate. Although...
In article number 1800179, Chih-I Wu and co-workers demonstrate that epitaxial growth of layered bismuth iodide (BiI3) on graphene shows flat morphologies excellent crystallinities because weak van der Waals interactions at the graphene/BiI3 interface. Hybrid photodetectors based heterostructures superior photosensitivity fast response time. Image designed by Siang-Jyuan Yan, Chia-Shuo Li, Po-Han Chang.