A5079816002- Semiconductor materials and devices
- Electrocatalysts for Energy Conversion
- Copper Interconnects and Reliability
- Advanced Memory and Neural Computing
- Organic Electronics and Photovoltaics
- Graphene research and applications
- Perovskite Materials and Applications
- Organic Light-Emitting Diodes Research
- Conducting polymers and applications
- Non-Destructive Testing Techniques
- Advancements in Battery Materials
- 2D Materials and Applications
- Radio Frequency Integrated Circuit Design
- Graphene and Nanomaterials Applications
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Fatigue and fracture mechanics
- Magnesium Alloys: Properties and Applications
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Microstructure and Mechanical Properties of Steels
National Taiwan University
2012-2019
Current methods of chemical vapour deposition (CVD) graphene on copper are complicated by multiple processing steps and high temperatures required in both preparing the inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables entire process to take place single step, at reduced (<420 °C), matter minutes. Growth foils is found nucleate from arrays well-aligned domains, ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low...
Abstract In this work, graphene-methylammonium lead iodide (MAPbI 3 ) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 10 7 A W −1 and detectivity 2 15 Jones achieved, with extremely high effective quantum efficiencies about 8 % in the visible range (450–700 nm). This excellent performance is attributed to ultra-flat films grown on graphene sheets. The structure covered uniform has exciton separation ability under...
Abstract A high performance of the normally-off recessed gate AlGaN/GaN MISHEMT was successfully demonstrated. This critical etch achieved by atomic layer etching (ALE), which minimizes surface damage and ensures precise control depth in region. Recessed with a remaining AlGaN thickness 5 nm exhibits excellent characteristics, including maximum drain current (ID,max) 347 mA/mm, competition threshold voltage (VTH) +2.6 V, on/off ratio achieving 10 9 . Furthermore, different thicknesses (2, 3,...
The hysteresis effect and switchable photovoltaic phenomena in organo-metal halide perovskite have been observed solar cells with certain structures under measure conditions. These were favorably applied to resistive random-access memory human-brain-mimicking devices, especially using photons as a reading or stress probe apart from electrical probe. However, the mechanisms causing these effects are not fully understood. In this paper, devices different hole transporting layers, which work...
This study focused on the effects of microstructures low-temperature impact toughness directly water-quenched offshore steel.Martensite dominated microstructure below quenched surface.In contrast, mainly lower bainite, martensite, and low amount ferrite were observed in central region specimen.The ductile to brittle transition temperature tempered martensite was significantly than that a bainite-dominated microstructure.It is found low-angle boundaries within bainite packets greatly impair...
In this work, we report a simple method for solution-processed organic light emitting devices (OLEDs), where single-layer graphene acts as the anode and hexa-peri-hexabenzocoronene exfoliating agent (HBC-6ImBr) provides surface modification. SEM images, PEDOT:PSS solution fully covered electrode after coating with HBC-6ImBr. The fabricated OLEDs showed outstanding brightness at 3182 cd/m2 current efficiency up to 6 cd/A which is comparable that of indium tin oxide films, OLED device...
In this paper, we demonstrate the use of self-assembly to fabricate solution-processed molybdenum oxide (MoO3) films by simply casting a metal solution onto an indium tin substrate. The self-assembled MoO3 (SA-MoO3) were used as hole injection layers (HILs) in green phosphorescent organic light-emitting diodes. devices with SA-MoO3 HILs exhibited nearly double efficiency one made commonly evaporated (e-MoO3) HILs. This improvement was attributed much smoother surface and smaller grains...
Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF₄ plasma treatment on the blocking oxide (BO) layer have been investigated to present gate injection of holes. These holes, injected from Al positive bias, were explained by bandgap engineering gradually-fluorinated BO and effective work function modulation gate. The Si-F complex in was analyzed X-ray photoelectron spectroscopy (XPS), while depth fluorine incorporation verified using a secondary ion mass spectrometer...
2016 International Conference on Solid State Devices and Materials,Robust Gate-Injected-Operation of Gold Nanoparticle Nonvolatile Memory with Low-Damage CF<sub>4</sub>-Plasma-Treated Blocking Oxide Layer