A5100317694- 2D Materials and Applications
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Graphene research and applications
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Silicon Carbide Semiconductor Technologies
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- ZnO doping and properties
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and interfaces
- Solid-state spectroscopy and crystallography
- Advanced Semiconductor Detectors and Materials
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
- Molecular Junctions and Nanostructures
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Crystallography and molecular interactions
- GaN-based semiconductor devices and materials
- Thermal Radiation and Cooling Technologies
- Organic Electronics and Photovoltaics
- Transition Metal Oxide Nanomaterials
Northwest A&F University
2024
Nanjing University
2017-2024
Ningbo University
2024
Tarim University
2024
Shenzhen University
2016-2023
Beijing Institute of Technology
2023
Ming Chi University of Technology
2023
Rensselaer Polytechnic Institute
2008-2022
Wuhan University of Technology
2022
First Affiliated Hospital of Zhengzhou University
2022
Healing away the dendrites The formation of lithium during charge-discharge cycles limits development metal batteries, because can cause electrical shorting cells. A number tricks have been used to try prevent dendrite formation. Li et al. took opposite approach (see Perspective by Mukhopadhyay and Jangid). They operated their cells at higher current densities, under which one would expect form owing nucleation rates. However, these conditions, that started heated up annealed, leading...
Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control material with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, crystal potential are strongly coupled. Here we report the synthesis a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable chiral....
The exploration of emerging materials physics and prospective applications two-dimensional greatly relies on the growth control their thickness, phases, morphologies, film–substrate interactions. Though substantial progress has been made for development films from conventional layered bulky materials, particular challenges remain obtaining ultrathin, single crystalline, dislocation-free intrinsically non-van der Waals-type three-dimensional materials. In this report, with successful...
One-dimensional nanoscale epitaxial arrays serve as a great model in studying fundamental physics and for emerging applications. With an increasing focus laid on the Cs-based inorganic halide perovskite out of its outstanding material stability, we have applied vapor phase epitaxy to grow well aligned horizontal CsPbX3 (X: Cl, Br, or I their mixed) nanowire large scale mica substrate. The as-grown features triangular prism morphology with typical length ranging from few tens micrometers...
Recently, there has been an explosive growth in research based on hybrid lead–halide perovskites for photovoltaics owing to rapid improvements efficiency. The advent of these materials solar applications led widespread interest understanding the key enabling properties materials. This resulted renewed related compounds and a search that may replicate defect-tolerant long lifetimes lead-halide perovskites. Given pace development field, rises efficiencies systems have outpaced more basic...
Improving device lifetime and stability remains the stumbling block of commercialization hybrid perovskite-based devices (HPDs). Although extensive efforts have been paid, thermal property, one most crucial parameters in conventional solid-state electronic devices, has rarely studied for HPDs. Here, we investigate temperature-dependent ultralow conductivity ultrahigh expansion single-crystalline MAPbX3 (MA = CH3NH3), which are found distinct from traditional thin-film solar cells materials....
High-temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in enabling high-performance electro-optic devices III-V semiconductor field. A typical example is the successful growth of p-type GaN by VPE for blue light-emitting diodes. excels as it controls film defects such point/interface and grain boundary, thanks to its high-temperature processing condition controllable deposition rate. For first time, single-crystalline halide perovskite thin demonstrated-a unique...
Epitaxial III–V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed experimentally implemented to produce epitaxial double system. Pristine mixed perovskites rods films were synthesized via van der Waals epitaxy by chemical vapor deposition...
2D black phosphorus (BP) and rhenium dichalcogenides (ReX2 , X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired novel applications in electronics, photonics, optoelectronics. Different BP with poor environmental stability, ReX2 low-symmetry distorted 1T structures excellent stability. In the electronic structure is weakly dependent on layer numbers, restricts property tunability device applications. Here,...
An environmentally friendly, low-cost, and large-scale method is developed for fabrication of Cl-doped ZnO nanowire arrays (NWAs) on 3D graphene foam (Cl-ZnO NWAs/GF), investigates its applications as a highly efficient field emitter photocatalyst. The introduction Cl-dopant in increases free electrons the conduction band also leads to rough surface NWAs, which greatly improves emission properties Cl-ZnO NWAs/GF. NWAs/GF demonstrates low turn-on (≈1.6 V μm−1), high enhancement factor...
Van der Waals epitaxial growth had been thought to have trivial contribution on inducing substantial strain in thin films due its weak nature of van interfacial energy. Due this, electrical and optical structure engineering via has rarely studied. In this report, we show that significant band could be achieved a soft film material PbI2 epitaxy. The thickness dependent photoluminescence single crystal flakes was studied attributed the substrate-film coupling effect incommensurate It is...
Abstract The discovery of hydrogen-induced electronic phase transitions in strongly correlated materials such as rare-earth nickelates has opened up a new paradigm regulating materials’ properties for both fundamental study and technological applications. However, the microscopic understanding how protons electrons behave transition is lacking, mainly due to difficulty characterization hydrogen doping level. Here, we demonstrate quantification trajectory strain-regulated SmNiO 3 by using...
Novel materials suitable for optoelectronics are of great interest due to limited and diminishing energy resources the movement toward a green earth. We report simple film growth method tune S composition, x from 1 2 in semiconductor ultrathin SnSx films on quartz substrates, that is, single phase SnS, SnS2, mixed phases both SnS SnS2 by varying sulfurization temperature 150 500 °C. Due nature films, their structural optical properties characterized cross-checked multiple surface-sensitive...
Heterogeneous strain engineering of soft crystals is realized via phase transition nanocrystals.
Antimony (Sb) nanostructures, including islands, sheets, and thin films, of high crystallinity were epitaxially grown on single-crystalline graphene through van der Waals interactions. Two types substrates by chemical vapor deposition used, the as-grown Cu(111)/ c-sapphire transferred SiO2/Si. On graphene, ultrathin Sb resulted in two growth modes associated morphologies Sb. One was islands Volmer-Weber (VW) mode, other sheets Frank-van Merve (FM) mode. In contrast, only VW mode found a...
Remarkable properties of layered metal dichalcogenides and their potential applications in various fields have raised intense interest worldwide. We report tens microns-sized ultrathin single crystal SnS2 flakes grown on amorphous substrates using a simple one-step thermal coevaporation process. X-ray pole figure analysis reveals that majority are oriented with the (0001) plane parallel to substrate preferred fiber texture. For few-layer-thick SnS2, Moire patterns 6-fold 12-fold symmetries...
The van der Waals (vdW) bond is traditionally believed to be orders of magnitude lower than the typical chemical (i.e., ionic, metallic, or covalent), and hence effects caused by a vdW interface are thought trivial. In this paper, investigating epitaxial growth mechanically soft perovskite on substrate, we obtained solid proof strong non-negligible interaction. experimental results illustrate formation cracks holes for relaxation strain as well lattice-constant-dependent angle evolution...