A5040446767- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Ferroelectric and Negative Capacitance Devices
- Perovskite Materials and Applications
- Magnetic and transport properties of perovskites and related materials
- Graphene research and applications
- Advanced Photocatalysis Techniques
- Advanced ceramic materials synthesis
- Geophysical and Geoelectrical Methods
- Advanced Sensor and Energy Harvesting Materials
- Microwave Dielectric Ceramics Synthesis
- Acoustic Wave Resonator Technologies
- Electrocatalysts for Energy Conversion
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Ultrasonics and Acoustic Wave Propagation
- Magnetic properties of thin films
- ZnO doping and properties
- Magnetic Properties and Applications
- Semiconductor materials and interfaces
- Conducting polymers and applications
- Topological Materials and Phenomena
National Cheng Kung University
2019-2025
Paul Scherrer Institute
2024
Manipulating electronic polarizations such as ferroelectric or spin has recently emerged an effective strategy for enhancing the efficiency of photocatalytic reactions. This study demonstrates control modulated by and magnetic approaches within a two-dimensional (2D) layered crystal copper indium thiophosphate (CuInP2S6) to boost reduction CO2. We investigate substantial influence polarization on CO2 efficiency, utilizing ferroelectric-paraelectric phase transition alignment through...
Antiferroelectric materials for dielectric energy storage with fast charging-discharging rate is an important research direction. In this study, to build a platform the potential application in flexible transparent devices, combination of muscovite substrate and antiferroelectric PbZrO3 (PZO) studied as model system. The growth PZO first optimized on rigid substrates then transferred form epitaxial polycrystalline films. performance robust electrical mechanical stability systematically...
Abstract Understanding the magnetic and ferroelectric ordering of magnetoelectric multiferroic materials at nanoscale necessitates a versatile imaging method with high spatial resolution. Here, soft X‐ray ptychography is employed to simultaneously image antiferromagnetic domains in an 80 nm thin freestanding film room‐temperature BiFeO 3 (BFO). The spin cycloid period 64 resolved by reconstructing corresponding resonant elastic scattering real space visualized together mosaic‐like linear...
Artificially aligned or positioned functional materials are essential building blocks for modern devices and nanoelectronics. Since the emergence of 2D materials, vertical stacking/integration exotic has garnered increasing attention. However, controlling homostructures, e.g. identical conjoined with varying crystalline orientations, magnetism, strain states, along lateral direction remains challenging. Leveraging on freestanding thin film growth techniques, concept twisted homostructures...
Ferroelectricity realized in van der Waals (vdW) materials with non-centrosymmetric stacking configurations holds promise for future 2D devices nonvolatile and reconfigurable functionalities. However, the epitaxial growth of ferroelectric vdW often struggles to achieve an energetically unfavorable configuration that enables electric polarization. This challenge is particularly evident when performing heteroepitaxy on another substrate create versatile scalable building blocks designed...
Abstract Epitaxial growth is of significant importance over the past decades, given it has been key process modern technology for delivering high-quality thin films. For conventional heteroepitaxy, selection proper single crystal substrates not only facilitates integration different materials but also fulfills interface and strain engineering upon a wide spectrum functionalities. Nevertheless, lattice structure, regularity crystalline orientation are determined once specific substrate...
With the rise of Internet Things, presence flexible devices has attracted significant attention owing to design flexibility. A ferroelectric field-effect transistor (FeFET), showing advantages high speed, nondestructive readout, and low-power consumption, plays a key role in next-generation technology. However, performance these is restricted since conventional substrates show poor thermal stability integrate traditional materials, limiting compatibility wearable devices. In this study, we...
In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust even at ultrathin thickness (<10 nm). This makes it a potential alternative material field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, other applications. Previous studies have explained that is attributed transformation from tetragonal (t-phase)...
Control of nonlinear dielectrics can be realized by mechanical bending.
Strain engineering has quickly emerged as a viable option to modify the electronic, optical, and magnetic properties of 2D materials. However, it remains challenging arbitrarily control strain. Here we show that, by creating atomically flat surface nanostructures in hexagonal boron nitride, achieve an arbitrary on-chip both strain distribution magnitude on high-quality molybdenum disulfide. The phonon exciton emissions are shown vary accordance with our field designs, enabling us write draw...
Abstract Multiferroics—materials that exhibit coupled ferroic orders—are considered to be one of the most promising candidate material systems for next‐generation spintronics, memory, low‐power nanoelectronics and so on. To advance potential applications, approaches lead persistent extremely fast functional property changes are in demand. Herein, it is revealed phase transition correlated orders multiferroic BiFeO 3 (BFO) can modulated via illumination single short/ultrashort light pulses....
The use of a pseudo-halide anion, such as thiocyanate (SCN–), an additive in the composition-engineered perovskite film is verified and its impact on solar cell (PSCs) performance investigated. precursor added with small amount formamidinium deposited by one-step solution process to prepare film. We observe significant enlargement domain size after incorporation ions Moreover, trace groups across measured time-of-flight secondary ion mass spectrometer identifies existing inside bulk,...
Efficient and durable electrocatalysts with superior activity are needed for the production of green hydrogen a high yield low energy consumption. Electrocatalysts based on transition metal oxides hold dominance due to their abundant natural resources, regulable physical properties, good adaptation solution. In numerous oxide catalyst materials, ferroelectrics, possessing semiconducting characteristics switchable spontaneous polarization, have been considered promising photoelectrodes solar...
Abstract Control of inhomogeneity in materials order to avoid unexpected effects the system remains a challenge. In this study, we seek engineer and anticipate new properties. Through precise control composition at atomic scale, an electrical polarization is induced composition-graded LaAlO 3 –SrTiO solid solution epitaxially deposited on NdGaO substrates. By tailoring direction compositional gradient, relationship between structure simulated via phase-field modeling revealed by combination...
Strontium titanate (STO), with a wide spectrum of emergent properties such as ferroelectricity and superconductivity, has received significant attention in the community strongly correlated materials. In strain-free STO film grown on SrRuO3 buffer layer, existing polar nanoregions can facilitate room-temperature when thickness approaches 10 nm. Here we show that around this scale, freestanding films without influence substrate tetragonal structure at room temperature, contrasting cubic seen...
Understanding the magnetic and ferroelectric ordering of magnetoelectric multiferroic materials at nanoscale necessitates a versatile imaging method with high spatial resolution. Here, soft X-ray ptychography is employed to simultaneously image antiferromagnetic domains in an 80 nm thin freestanding film room-temperature BiFeO$_3$ (BFO). The spin cycloid period 64 resolved by reconstructing corresponding resonant elastic scattering real space visualized together mosaic-like linear dichroic...
From extreme strain to bending, the possibilities in manipulation of freestanding films oxide perovskites bring a novel landscape their properties and brings them one step closer application. It is therefore great importance fully understand inherent such films, which dimensionality surface effects can play major role defining materials ground state. This paper reports (FS) canonical oxide, SrTiO3 (STO) with thicknesses 20, 30, 40 80 nm. We show that relaxed ultrathin STO FS become polar at...
Ferroelectric catalysts are known for altering surface catalytic activities by changing the direction of their electric polarizations. This study demonstrates polarization-switchable electrochemistry using layered bismuth oxyselenide (L-Bi
Abstract In semiconducting monolayer transition metal dichalcogenides (ML‐TMDs), broken inversion symmetry and strong spin‐orbit coupling result in spin‐valley lock‐in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real‐space structural transformation. Here, field ( B )‐induced giant electric hysteretic responses back‐gate voltages are reported ML‐MoS 2 field‐effect transistors (FETs) on SiO /Si at temperatures < 20 K. The observed...
In semiconducting monolayer transition metal dichalcogenides (ML-TMDs), broken inversion symmetry and strong spin-orbit coupling result in spin-valley lock-in effects so that the valley degeneracy may be lifted by external magnetic fields, potentially leading to real-space structural transformation. Here, we report field (B)-induced giant electric hysteretic responses back-gate voltages ML-MoS2 field-effect transistors (FETs) on SiO2/Si at temperatures < 20 K. The observed hysteresis...
Thin film engineering, utilizing proper control of crystalline orientation, strain, thickness, and defect density in thin films, has offered tremendous degrees freedom for researchers to modify the physical properties, phase stability, domain architectures a wide spectrum functional materials. This work unveils naturally formed superdomain architecture arising from low-orientation-symmetry-induced energetically degenerate state (101)-oriented tetragonal Pb(Zr,Ti)O3 epitaxial film. Different...
Optical control of ferroic orders and phase stability in ferroelectric/multiferroic materials is significant importance not only for scientific research but also the development next-generation electronics. In article number 2007264, Jan-Chi Yang co-workers adopt extremely short light pulses to modulate phases ferroelectric domain structures multiferroic BiFeO3 thin films, fulfilling ultrafast all optical nonvolatile ordering at ambient temperature.