A5049486641- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- 3D IC and TSV technologies
- Semiconductor Quantum Structures and Devices
- Electronic and Structural Properties of Oxides
- Graphene research and applications
- Copper Interconnects and Reliability
- Photonic Crystals and Applications
- Advanced Sensor and Energy Harvesting Materials
- Acoustic Wave Resonator Technologies
- Thermal properties of materials
- Optical Coatings and Gratings
National Taiwan University
2009-2025
Yonsei University
1991-2025
Yonsei University College of Dentistry
2025
National Taiwan University of Science and Technology
2024
National Taiwan Normal University
2014-2023
Chang Gung University
2023
National Yang Ming Chiao Tung University
2017-2022
Electro Optical Systems (Germany)
2008-2021
Kaohsiung Veterans General Hospital
2019
ORCID
2018
In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added on top of FinFET's gate stack. The test devices have a floating internal that can be electrically probed. Direct measurement found small-signal voltage amplified by 1.6X maximum at in agreement with improvement subthreshold swing (from 87 to 55mV/decade). ION increased >25% for IOFF. For time, demonstrate raising HfZrO2 ferroelectricity, annealing higher temperature, reduces and eliminates IV hysteresis...
The antiferroelectricity in HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics SS <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\rm {min}}=23$ </tex-math></inline-formula> mV/dec and {avg}}=50$ over 4 decades notation="LaTeX">$I_{\rm {DS}}$ is demonstrated. near non-hysteresis achieved antiferroelectric-like HZO due to a...
Instead of developing a novel red phosphor individually, this work proposes the production white light by combining near-ultraviolet/ultraviolet diode chip with blue and special yellow phosphors: includes green components high color saturation. The availability scheme is demonstrated preparing light-emitting (WLED) rendering index (Ra) up to 90.3. desired single-mass successfully screened out from YVO4:Bi3+,Eu3+ system using combinatorial chemistry approach. When emission luminous efficiency...
Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling validated on standard 14nm FinFET. transient behavior of gate drain current response are exhibited triangular sweep. dynamic NC model compact circuit for ultra-thin FE-HZO established experimental data validation, estimates the...
Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window VT (threshold voltage) shift <; 0.1V, SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">for</sub> = 42mV/dec, xmlns:xlink="http://www.w3.org/1999/xlink">rev</sub> 28mV/dec, and switch-off 0.2V. The optimum ALD process leads single monolayer SiO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> for IL...
FeFETs with 5-nm-thick Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) have been demonstrated in memory operations for the ON/OFF current ratio >10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> at zero gate voltage and a window (MW) of 0.6-0.7 V. A gradual transition ferroelectricity an increasing crystallization temperature gate-last process was presented. The...
A double-HZO (HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated as low |V xmlns:xlink="http://www.w3.org/1999/xlink">P/E</sub> | = 5 V, 2-bit endurance > 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycles and retention xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s. Inserting an insulator to separate the layers...
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) for low-power steep-slope transistor applications. anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic gain measured polarization hysteresis loop calculated subthreshold swing 33 mV/dec over six decades <inline-formula...
The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating significant improvement in subthreshold swing (~double slope) and peak g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> (118% enhancement) due to internal voltage amplification. enhancement at small V xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> (-0.1V) indicates intrinsic benefit by NC without lateral bias. concept of...
In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on exposed n-type GaN layer of LED after dry etching, and serially connected to through standard semiconductor-manufacturing technologies. Such LED/MOSFET device able circumvent undesirable issues that might be faced...
This study demonstrates the capability of controlling optical anisotropy lasing emissions by manipulating coupling strength spatially and spectrally between oscillated electric field emitted light localized surface plasmon (LSP) resonance for a random medium composed colloidal CdSe/ZnS quantum dots (QDs) ellipsoidal silver nanoparticles (Ag NPs). Distinctive from amplified spontaneous emission generally observed on QDs, it has been found that revealed system exhibit clear interference...
Using a ferroelectric PbZrTiO3 gate stack, the range of steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders magnitude demonstrating an improvement (by approximately double slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼−1.5V) indicates internal voltage amplification negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V). concept coupling polarization is proposed. power consumption also...
Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> metal/ferroelectric/metal (MFM) capacitor and field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {P}$ </tex-math></inline-formula> , per pulse analysis through consecutive...
This study investigated the effect of vacuum plasma treatment on shear bond strength (SBS) three-dimensional (3D)-printed resin and cement. Specimens were categorized based airborne-particle abrasion (APA), plasma, bonding agent treatments. Long-term adhesive stability was examined by comparing their SBSs before after thermocycling. The group with applied thermocycling exhibited highest SBS 23.9±2.2 MPa. No significant difference observed among remaining groups, except for that subjected...
The fusion of volatile and nonvolatile memory within a complementary-dynamic random-access (C-DRAM) in one cell is proposed with antiferroelectric-like hafnium-zirconium oxide dual function characteristics DRAM storage class the hierarchy. Atomic-resolution spherical aberration-corrected scanning transmission electron microscopy employed to directly reveal insights phase evolution by utilizing diffractograms determine lattice parameters. Storage-data-transfer-cycling-recovery an alternating...
Extremely steep switch of negative-capacitance (NC) Nanosheet (NS) GAA-FETs and FinFETs are experimentally presented with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SS}_{\text{avg}}/\text{SS}_{\min}=22/14\text{mV}/\text{dec}$</tex> xmlns:xlink="http://www.w3.org/1999/xlink">$\text{SS}_{\text{avg}}/\text{SS}_{\min}=38/21\ \text{mV}/\text{dec}$</tex> , respectively. The sub-60m V/dec current magnitude sub-60mV/dec is >4 ∼5 decades for...
An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in emission spectra can be understood by quasi-Fermi level positions of electrons and holes, which both lie band gap. This also gives a narrower gap than that bulk silicon. surface bending Si/oxide interface responsible for this energy reduction.
A metal/oxide/p-Si structure with ultrathin oxide is utilized as a photodetector. At positive gate bias, the dark current of photodetector limited by thermal generation minority carriers in inversion layer. The high growth temperature (1000/spl deg/C) can reduce to level low 3 nA/cm/sup 2/. As biased layer, tunneling diode works deep depletion region soft pinning voltage, instead surface potential, very different from conventional MOS thick oxide.
The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. subthreshold swing (SS) 40 mV/dec and 39 for forward reverse sweep, respectively, as well almost hysteresis-free are achieved. partial orthorhombic phase FE-HAO confirmed both (PMA) without (PDA) a capping layer. A gradual transition polarization after 1000°C annealing obtained increasing Al concentration large remanent (P <inf...
Abstract The concept of ferroelectric (FE) negative capacitance (NC) may be a turning point in overcoming the physical limitations imposed by Boltzmann tyranny to realize next-generation state-of-the-art devices. Both body factor ( m -factor) and transport mechanism n are simultaneously improved integrating an NC with tunnel FET (TFET). modeling approach is discussed this study as well physics. By optimizing thicknesses FE, semiconductor, interfacial layers, FE layers modulated match that...
Hybrid improper ferroelectricity (HIF) denotes a new class of polar instability by the mixture two octahedral-distortion modes and can feature coexistence abundant head-to-head tail-to-tail domains, which domain walls tend to be charged due respective screening charges with an opposite sign. However, no such coexisting carriers are available in materials. Using group-theoretical, microscopic, spectroscopic analyses, we establish existence hidden antipolar order parameter model HIF...