A5063768518- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Acoustic Wave Resonator Technologies
- GaN-based semiconductor devices and materials
- Thermal properties of materials
- Electronic and Structural Properties of Oxides
- Silicon Carbide Semiconductor Technologies
- Metallic Glasses and Amorphous Alloys
- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Cardiac Structural Anomalies and Repair
- Magnetic properties of thin films
- Supercapacitor Materials and Fabrication
- Advanced Fiber Optic Sensors
- Thin-Film Transistor Technologies
National Yang Ming Chiao Tung University
2020-2025
National Taiwan University
2024-2025
National Taiwan Normal University
2020-2023
National Taiwan University of Science and Technology
2023
Industrial Technology Research Institute
2022
Electro Optical Systems (Germany)
2021
A double-HZO (HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated as low |V xmlns:xlink="http://www.w3.org/1999/xlink">P/E</sub> | = 5 V, 2-bit endurance > 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycles and retention xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s. Inserting an insulator to separate the layers...
Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> metal/ferroelectric/metal (MFM) capacitor and field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {P}$ </tex-math></inline-formula> , per pulse analysis through consecutive...
The fusion of volatile and nonvolatile memory within a complementary-dynamic random-access (C-DRAM) in one cell is proposed with antiferroelectric-like hafnium-zirconium oxide dual function characteristics DRAM storage class the hierarchy. Atomic-resolution spherical aberration-corrected scanning transmission electron microscopy employed to directly reveal insights phase evolution by utilizing diffractograms determine lattice parameters. Storage-data-transfer-cycling-recovery an alternating...
The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO<sub>2</sub> (HZO) and dielectric (DE) Al<sub>2</sub>O<sub>3</sub> demonstrates a current ratio of <inline-formula> <tex-math notation="LaTeX">$> 100\times $ </tex-math></inline-formula>, TER (tunneling electroresistance) 50\times multilevel states, 10^{4}$ </tex-math></inline-formula> sec retention, cycling endurance as high 10<sup>8</sup>. concept tunneling through DE in an antiferroelectric (AFE)...
A plasma-based undoped-HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O plasma period in plasma-enhanced atomic layer deposition (PE-ALD) an effective approach to enhance remnant polarization ( P xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> ) up 2P = 25 μC/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for MFM...
After 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; aim to homogenize corner field and mitigate dead zones. The interlayer Al <inf xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> or TiN in double-HZO...
Opposite polarity cycling recovery (OPCR) is proposed to completely restore a fatigued antiferroelectric (AFE) capacitor back its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive AFE with unipolar revealed achieve unlimited endurance, and OPCR experimentally demonstrated accumulate <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Superlattice (SL) HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -ZrO with physical thickness of 5 nm and low phase fraction ratio 0.101:1 monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical analysis (GPA) is demonstrated. The homogeneous congruous SL-HfZrO (HZO) sufficient ferroelectric-domain integrated as ferro-stack FeFETs for multibit NVM |V...
Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend endurance cycles of ferroelectric (FE) capacitor and experimentally demonstrated 200 periods accumulated 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> switching cycles. Positive negative minor loops (AmL) AFCR achieve nondegradation complete restoration $\triangle 2 \mathrm{P}_{\mathrm{r}}$ toward prospect unlimited operation....
In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-</inf> xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO). With the coexistence of orthorhombic-phase (FE) tetragonal-phase (AFE) grains crucial consideration back-switching field, our generalized NLS...
Endurance ~ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cycling of ferroelectric (FE) and antiferroelectric (AFE) HfZrO2 (HZO) capacitors are achieved experimentally by adjusting the programming pulse width (t <inf xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> ). The correlation between switching polarization (△P) fatigue behavior high endurance is discussed. For long t (= 1 µs), AFE exhibits excellent with >...
Opposite polarity cycling recovery (OPCR) is proposed for the first time to completely restore a fatigued antiferroelectric (AFE) capacitor back its initial state, thereby extending endurance number of switching cycles AFE-RAM. A comprehensive model exclusive AFE with unipolar revealed toward prospect unlimited endurance, and OPCR experimentally demonstrated be 5.6×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cycles, while...
A plasma-based ferroelectric undoped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. gradual phase transition in material confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> plasma periods. The...
The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mathrm {Hf}_{1-x}Zr_{x}\text{O}$ </tex-math></inline-formula> 2(HZO) and Al2O3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored the designs dielectric interlayer 0 nm to 4 type, while current mechanism revealed. multilevel AFE-FTJ...
Instability threshold voltage (VT) with retention loss of read-after-write is a critical issue fundamental physics for ferroelectric field effect transistors (FeFETs) scaling down under high-speed operation. The mechanisms including charge trapping and depolarization (Edep) are discovered related to surface potential coercive (EC). trapped can be effectively detrapped by opposite polarity stimulation validated technology computer-aided design modeling. In addition, the Edep revealed serious...
A 1500x I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LRS</inf> /I xmlns:xlink="http://www.w3.org/1999/xlink">HRS</inf> with a high cell current of ~100 nA/ (J = 83 A/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating...
Ferroelectric (FE) Hf1-xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility data storage with natural bi-stable characteristics. This study experimentally characterizes demonstrates the FE antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated HfO2-system, diode-junction current operations. Unipolar operations on one of two hysteretic polarization branch loops mixed AFE...
The classical memory device with cryogenic operation is in high demanded for quantum information processing. endurance of anti-ferroelectric (AFE) and ferroelectric (FE) <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{x}}\mathrm{O}_{2}$</tex> capacitors investigated xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 10^{10}$</tex> cycles (80 K). Moreover, the AFE capacitor exhibits a speed response ~ 80%...
An ultralow program/erase voltage ( |VP/E| = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field EC ) concept for four-level stable state with outstanding endurance (>105 cycles) and data retention (>104 s at 65 °C). The mixture of ferroelectric (FE) AFE domains can provide multistate storage zero bias multilevel cell (MLC) applications. HfZrO2 (HZO) AFE-FE assembles orthorhombic/tetragonal (o/t) phase...
Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</sub> Zr xmlns:xlink="http://www.w3.org/1999/xlink">0.9</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> are validated by pulse measurement and capacitance–voltage (C-V). The difference between saturation polarization ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Asymmetric field cycling recovery (AFCR) with alternating opposite low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}$ </tex-math></inline-formula> -field is proposed to restore a fatigued ferroelectric (FE) capacitor and experimentally demonstrated for up notation="LaTeX">$10^{{12}}$ switching cycles, thereby extending the endurance of FeRAM. Positive negative asymmetric minor loops (AmLs) AFCR...
Since the analog-based energy-efficient accelerator for synapses is highly demanded in artificial intelligence (AI) era, homogeneous and coherence ferroelectric phase of HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) by superlattice (SL) growth mode with double layers proposed this work. The experimental results demonstrate excellent linear alternating consecutive potentiation depression conductance (α...