A5015376203- Injection Molding Process and Properties
- Semiconductor materials and devices
- Nanofabrication and Lithography Techniques
- Advanced machining processes and optimization
- Advanced Memory and Neural Computing
- Additive Manufacturing and 3D Printing Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Phase-change materials and chalcogenides
- Manufacturing Process and Optimization
- Advanced Measurement and Metrology Techniques
- 3D IC and TSV technologies
- Epoxy Resin Curing Processes
- Advancements in Photolithography Techniques
- Advanced Surface Polishing Techniques
- Advanced Machining and Optimization Techniques
- Electronic Packaging and Soldering Technologies
- Photonic and Optical Devices
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
- Composite Material Mechanics
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Image Processing Techniques and Applications
- Nanowire Synthesis and Applications
- Low-power high-performance VLSI design
National Kaohsiung University of Science and Technology
2019-2025
Taiwan Semiconductor Manufacturing Company (Taiwan)
2007-2024
National Taiwan University
2023
University of Science and Technology
2019
National University of Kaohsiung
2019
National Kaohsiung University of Applied Sciences
2007-2015
United Microelectronics (United States)
2007
Dayeh University
2003-2006
The Ohio State University
1994-1998
Case Western Reserve University
1996
State-of-the-art silicon interposer technology of chip-on-wafer-on-substrate (CoWoS) containing the second-generation high bandwidth memory (HBM) has been applied for first time in fabricating high-performance wafer-level system-in-package. An ultralarge Si up to 1200mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> made by a two-mask stitching process is used form basis CoWoS (CoWoS-2) accommodate chips logic and achieve highest...
Polymeric flows in microchannels are found to differ significantly from those macrogeometries. Increasing the mechanical properties of microstructures is one most important issues injection-molding processes. Weld-line characteristics structures with different cross-sections investigated this study. The effects process parameters and cross-sectional dimensions on tensile strength a weld line discussed. A mold was designed such way that specimens without lines can be developed separately....
Abstract This work presents methods to measure and analyze in‐plane permeabilities of various fabric reinforcements. The principal flow directions need be determined first by conducting visualization. From the front pattern, ratio in two can determined. pressure rate relationship from both radial unidirectional measurement are then used calculate values permeabilities. By use method, edge effect also estimated.
Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> metal/ferroelectric/metal (MFM) capacitor and field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {P}$ </tex-math></inline-formula> , per pulse analysis through consecutive...
Abstract Linear Fresnel lenses are widely used in solar energy concentration, image processing, and optical imaging applications. Concentrated power technology offers a more efficient economical solution by focusing sunlight onto smaller receiver, thereby increasing conversion efficiency reducing facility costs. This research aims to design manufacture concentrating lens that can achieve the most uniform illumination lowest loss percentage. The of linear for maximum uniformity minimal loss....
Abstract This work discusses tow independent methods to measure and analyze the trans‐plane fjuid permeability of various fiber reinforcements. In unidirectional flow method, measured injection pressure rate, together with a one‐dimensional Darcy's law were used calculate mats was rate only at low pressure. Flow‐induced mat change occurred when exceeded clamping Measured in conjunction three‐dimensional mold filling computer program simulate effect stacking sequence for combination different...
To accommodate the exceedingly demanding power integrity (PI) requirements for advanced artificial intelligence (AI) and high performance computing (HPC) components, high-K (HK) based deep trench capacitors (DTC) have been integrated first time in silicon interposer with through via (TSV) fine-pitch interconnects chip-on-wafer-on-substrate (CoWoS) integration. A specific capacitance density (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Hot embossing is currently applied to replicate microstructures only on one side or two opposite sides of a polymer substrate. If microstructure replication perpendicular the substrate necessary, closed-die hot can be applied. In this study, polymethyl methacrylate (PMMA) was used as A closed die with three mold inserts compress heated PMMA Effects related process parameters accuracy were studied. Closed-die compared injection molding and compression molding. Results show that provide better...
State-of-the-art silicon interposer technology of chip-on-wafer-on-substrate (CoWoS®) has been applied for the first time in fabricating high performance wafer level system-in-package (WLSiP) containing 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> -generation bandwidth memory (HBM2). An ultra-large Si up to 1200 mm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> made by a two-mask stitching process is used form basis CoWoS®...
This work systematically demonstrates a novel recovery scheme for MFIS-FeFET memory arrays involving device fabrication and circuit integration. For the first time, timing to initiate prolong endurance of FeFETs is studied. A 100-ns fast-unipolar pulsing (FUP) treatment at optimized demonstrated with significantly extending cycles by factor 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , together nearly zero loss (0.02 %) in window...
Low voltage high density non-volatile memories for data intensive applications need superior performance selectors in terms of endurance, thermal stability, and variability. In this work we studied the mechanisms key factors low arsenic-free GeCTe-based selectors. The endurance acceleration curve based on operating current is reported. A remarkable 4x10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cycles around 100 µA experimentally...
Modern data-centric computing applications are increasingly demanding in terms of memory density and performance. The cross-point architecture based on the two-terminal one-selector/one-resistor cell is an attractive solution for high-density 3D-compatible embedded memory. In this letter, we introduce a new arsenic-free chalcogenide material, namely SiNGeCTe, low voltage selector applications, report its remarkable reliability characteristics. inclusion Si dopant allows enhanced material...
Abstract This study is a comparison of independently designed mold flow experiments performed at The Dow Chemical Company with simulations from computer code developed Ohio State University. used in the validation included isothermal 1‐dimensional line gating and end venting, 2‐dimensional converging center two different resin systems. simulation results were compared experimental pressure temperature readings fill times. It was found that simulated times could be predicted within error...
We report the first realization of high performance Ge CMOS using a novel InAlP passivation scheme. The large conduction band and valence offsets between confine electrons holes within channel for n-FETs p-FETs, respectively. cap reduces scattering due to high-K/InAlP interface traps boosts carrier mobility. As result, record electron mobility μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EFF</sub> ~958 cm <sup...
InAlP-capped Ge nFETs with sub-400 °C process modules were reported. on substrates InAlP/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /HfO as gate dielectrics demonstrate the highest reported (100) peak μ xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> for inversion mode devices. In addition, stack HfO directly deposited InAlP cap was implemented in 300 mm Si first time....
Ovonic Threshold Switching Selector faces challenges of VTH stability in intensive applications due to relaxation and the degradation upon endurance cycling. This work investigates first fire (FF) voltage effects mechanisms related switching characteristics on GeCTe-based selectors. Higher V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> more uniform I xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> -V control during cycling were...