A5052698643- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Nanomaterials for catalytic reactions
- Semiconductor materials and devices
- Adsorption and biosorption for pollutant removal
- CCD and CMOS Imaging Sensors
- Catalytic Processes in Materials Science
- Photonic and Optical Devices
- Catalysis and Hydrodesulfurization Studies
- Advanced Thermoelectric Materials and Devices
- Quantum Computing Algorithms and Architecture
- Silicon Nanostructures and Photoluminescence
- Catalysis for Biomass Conversion
- Nanowire Synthesis and Applications
- Neuroscience and Neural Engineering
- Radio Frequency Integrated Circuit Design
- Advanced Memory and Neural Computing
- Air Quality Monitoring and Forecasting
- Chemical Synthesis and Reactions
- Odor and Emission Control Technologies
- Agriculture, Soil, Plant Science
- Thermal Radiation and Cooling Technologies
- Mesoporous Materials and Catalysis
- Thermal properties of materials
- Semiconductor Quantum Structures and Devices
Pohang University of Science and Technology
2023-2024
Samsung (South Korea)
2024
Pukyong National University
2021-2023
Sungkyunkwan University
2021
Korea Advanced Institute of Science and Technology
2012
We report the first experimental results on electromagnetic interference (EMI) shielding effectiveness (SE) of monolayer graphene. The CVD graphene has an average SE value 2.27 dB, corresponding to ∼40% incident waves. shows more than seven times (in terms dB) greater gold film. dominant mechanism is absorption rather reflection, and portion decreases with increase in number layers. Our modeling work that plane-wave theory for metal also applicable model predicts ideal can shield as much...
The primary objective of this research is to address practical challenges, particularly the simultaneous removal multiple low-concentration air-born contaminants in high humidity conditions a semiconductor industry. A hydrophobic microporous carbon surface layer on USY zeolite (Si/Al=15) with core-shell structure was synthesized using sucrose as source and p-toluenesulfonic acid carbonization catalyst. mass ratios between (sucrose/USY=0–1) temperatures (300–1100℃) were varied order optimize...
In this article, a reliable drain-extended (De) fin-shaped field-effect transistor (DeFinFET) with improved thermal performance and electrical is proposed for high-voltage (HV) system-on-chip (SoC) applications at 10-nm technology nodes. The device structure uses the dual split field plate (DS) technique high conductivity of silicon dioxide (SiO2), which enables significant improvement in DeFinFET. shows an maximum lattice temperature ( <inline-formula...
The oxidative desulfurization (ODS) of organic sulfur compounds over tungsten oxide supported on highly ordered mesoporous SnO2 (WO x /meso-SnO2) was investigated. A series WO /meso-SnO2 with contents from 10 wt% to 30 wt%, were prepared by conventional wet impregnation. physico-chemical properties the catalysts characterized X-ray diffraction (XRD), N2 adsorption-desorption isotherms, electron microscopy, Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy, and...
An improved structure for an Insulated Gate Bipolar Transistor (IGBT) with a separated buffer layer is presented in order to improve the trade-off between turn-off loss (Eoff) and on-state voltage (Von). However, it difficult set efficient parameters due increase new doping concentration variable. Therefore, machine learning (ML) algorithm proposed as solution. Compared conventional Technology Computer-Aided Design (TCAD) simulation tool, demonstrated that incorporating ML into device...
<title>Abstract</title> We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (Av) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify insufficient current, allowing (SF) utilize band-to-band (BTBT). Compared thermionic emission, based structures contribute increasing Av through lower channel length modulation body effect. As result, higher (~1.0 V/V) than conventional...
We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (A
Silicon nanowire has attracted considerable attention in thermoelectric devices because the diameter reduction can reduce thermal conductivity with boundary scattering, improving figure of merit. Nevertheless, there are some challenges device fabrication due to relatively low efficiency and difficulties mass production. Here, we suggest silicon a corrugated surface overcome these drawbacks by using deep reactive-ion etcher. Corrugated nanowires significantly increase merit, which is caused...
In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical of devices were simulated by using Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, compared conventional SJBT layers. tool result shows...