Simple solvent-vapor annealing was used to fabricate single crystals of dioctylbenzothienobenzothiophene on a polymer dielectric surface. By involving self-organized phase separation, crystal length is enhanced and good semiconductor/insulator interface obtained. The field-effect transistors (FETs) exhibit an average p-type FET mobility 3.0 cm2 V−1 s−1, with highest value 9.1 s−1. increases as temperature decreases, which suggests intrinsic bandlike transport. Detailed facts importance...

We report a rapid and scalable method for the separation of metallic semiconducting single-wall carbon nanotubes (SWCNTs); is performed by selective adsorption SWCNTs on agarose gel. The most effective was realized simple procedure in which piece gel containing sodium dodecyl sulfate frozen, thawed, squeezed. This process affords solution 70% pure leaves 95% SWCNTs. Field-effect transistors constructed from separated have been demonstrated to function without any electrical breakdown.

Cutting-edge field-effect and thin-film transistors (FETs TFTs) reportedly offer very high carrier mobilities, but the reliability of these values is controversial. This study reveals complicated evolution band bending actual concentrations in three-terminal devices with non-Ohmic contacts, its effect on estimation mobility. The widely used method shown to be unreliable: In FETs or TFTs gated Schottky mobility can overestimated by a factor 10 more, while those resistive contacts it...

In this review, polarization principles are firstly summarized. Following that, the relationship between structures of polymer-based dielectrics and its dielectric property is introduced. Finally, application in flexible electronic devices carefully discussed.

The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics these devices. OFETs fabricated using wide band gap semiconductor and gold source/drain contacts display large threshold voltage poor characteristics. Insertion metal-oxide layer at contact/semiconductor interface lower barrier height, resulting in marked improvements slope strong suppression short-channel effect. improved are attributed...

The generalized Einstein relation (GER) can unify various theoretical models and predict charge transport in OSCs with crystallinities, by altering the variance of density states delocalization degree a Gaussian-distributed states.

Despite a large steric bulk of C 60 , molecular graphene with covalently linked pendant [hexabenzocoronene (HBC)–C ; 1] self-assembles into coaxial nanotube whose wall consists graphite-like π-stacked HBC array, whereas the surface is fully covered by layer clustering . Because this explicit configuration, exhibits an ambipolar character in field-effect transistor output [hole mobility (μ h ) = 9.7 × 10 −7 cm 2 V −1 s electron e 1.1 −5 ] and displays photovoltaic response upon light...

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility contact region was found to follow Meyer-Neldel rule. An exponential trap distribution, rather than metal/organic hole barrier, proposed be dominant factor of resistance transistors. The variable temperature measurements revealed a much narrower distribution copper compared with corresponding gold contact, this origin smaller for despite lower work function.

The charge injection process in top-contact organic field-effect transistors was energetically observed with displacement of the Fermi level as a result scanning gate voltage. Doping charge-transfer molecules into metal/organic interface resulted low resistance, which unveiled bulk transport injected charges from contact metal channel. authors found that clearly obeys Meyer-Neldel rule, according to exponential density states near band edge limits injection.

We describe the mechanism of contact resistance reduction and improvement in device performance organic field-effect transistors by chemical doping at interface. Insertion iron(III)trichloride into interface significantly reduced from 200 to 8.8 kΩ cm a gate voltage −40 V, mobility 7.0 cm2/V s was achieved devices based on dioctylbenzothienobenzothiophene. The improved charge injection is attributable depletion layer thickness occupation trap states access region due generation carriers doping.

Printing semiconductor devices under ambient atmospheric conditions is a promising method for the large‐area, low‐cost fabrication of flexible electronic products. However, processes conducted at temperatures greater than 150 °C are typically used printed electronics, which prevents use common substrates because distortion caused by heat. The present report describes room‐temperature printing allows thin‐film to be room temperature without application development π‐junction gold...

Extensive research on organic field-effect transistors (OFETs) performed to date investigated separately the electronic contact and gate dielectric interfaces but rarely probed relation between two. In this report, strong impact of resistance (Rc) is revealed. With same semiconductor dioctylbenzothienobenzothiophene (C8-BTBT) device configuration, Rc value varies greatly from 10 66 kΩ·cm depending interfaces. Also, gate-voltage dependency exhibits an unexpectedly large discrepancy when...

2-Inch-wafer-scale MoS₂ films and patterned monolayers were achieved <italic>via</italic> a vapor-liquid-solid growth using non-volatile precursors.

Solution-processed artificial synapses are expected to develop the synaptic electronics towards flexible and highly integrated three-dimensional neural networks break through von Neumann computing architecture in post-Moore era.

Abstract The solubility and low processing temperatures of organic semiconductors enable fabrication electronic devices using relatively simple printing technologies, hold promise for realizing flexible plastic by environment‐friendly production methods at cost. In particular, effectively the self‐assembling ability molecules, semiconductor are expected to become more efficient in terms energy material consumption. We have developed two solution‐based self‐organized formation crystals,...

A bottom-up fabrication technique for the preparation of self-organized organic field-effect transistors (OFETs) on flexible plastic substrates is presented. Solution-based self-organization OFETs achieved by patterning insulator surface with solution-wettable and unwettable regions. The proposed method satisfies several important requirements printable electronics, including reduction in energy consumption, minimization facilities, on-demand use molecular materials. Self-organized display...

We develop a general approach to precisely extract the device parameters in top-contact pentacene thin film transistors. The charge trap sites are clarified by analyzing grain size dependence of parameters. channel mobility and threshold voltage limited traps region, most which located not at boundaries but organic/insulating-layer interface. contact resistance decreases increasing is controlled suggested be concentrated metal/organic

Bias stress instability in top-contact pentacene thin film transistors was observed to be correlated not only the channel but also metal/organic contact. The drain current decay under bias results from combination of contact resistance change and threshold voltage shift channel. is contact-metal dependent, though corresponding shifts are similar. suggest that time-dependent charge trapping into deep trap states both regions responsible for effect organic transistors.

A facile solution process for the fabrication of organic single crystal semiconductor devices which meets demand low-cost and large-area high performance electronic is demonstrated. In this paper, we develop a bottom-up method enables direct formation crystals at selected locations with desired orientations. Here oriented growth one-dimensional achieved by using self-assembly molecules as driving force to align these in patterned regions. Based upon self-organized crystals, fabricate field...

We have revealed practical charge injection at metal and organic semiconductor interface in field effect transistor configurations. developed a facile structure that consisted of double-layer electrodes order to investigate the efficiency through contact dependence. The interlayer with few nanometers thickness between electrode drastically reduces resistance interface. improvement has clearly obtained when is lower standard potential metals than large work function metals. also implies most...

A spontaneous patterning technique via parallel vacuum ultraviolet is developed for fabricating large-scale, complex electronic circuits with 1 μm resolution. The prepared organic thin-film transistors exhibit a low contact resistance of 1.5 kΩ cm, and high mobilities 0.3 cm2 V−1 s−1 in the devices channel lengths 5 μm, respectively. As service to our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed may be re-organized online...

Patterning and alignment of conductive nanowires are essential for good electrical isolation high conductivity in various applications. Herein a facile bottom-up, additive technique is developed to pattern align silver (AgNWs) by manipulating wetting dispersions microchannels. By forming hydrophobic/hydrophilic micropatterns down 8 μm with fluoropolymer (Cytop) SiO2, the aqueous AgNW optimized surface tension viscosity self-assemble into microdroplets then dry form anisotropic networks. The...

Abstract The reliability of mobility has come to be a critical issue the development new electronics especially for organic electronics, since is typically extracted from field‐effect transistors containing various extrinsic effects and overestimation popular in literature. Recently, this emphasized factor ( r ) proposed by pioneers gauge reported. Albeit many factors discussed, how much influence remains unrevealed facile solution using still lacking. Here, it shown that widely used...