Seung‐Hoon Lee

ORCID: 0000-0002-0301-522X
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About
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Research Areas
  • Conducting polymers and applications
  • Organic Electronics and Photovoltaics
  • Carbon Nanotubes in Composites
  • Organic Light-Emitting Diodes Research
  • Semiconductor materials and devices
  • Graphene research and applications
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Advanced Sensor and Energy Harvesting Materials
  • Ferroelectric and Negative Capacitance Devices
  • Perovskite Materials and Applications
  • Molecular Junctions and Nanostructures
  • Neuroscience and Neural Engineering
  • ZnO doping and properties
  • Fullerene Chemistry and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Transition Metal Oxide Nanomaterials
  • Nanowire Synthesis and Applications
  • Semiconductor materials and interfaces
  • Diamond and Carbon-based Materials Research
  • Advanced Power Generation Technologies
  • Ferroelectric and Piezoelectric Materials
  • Advancements in PLL and VCO Technologies
  • Advanced materials and composites
  • Advanced Optical Sensing Technologies

Kongju National University
2023-2024

Korea Research Institute of Chemical Technology
2018-2023

Inha University
2022

Hanbat National University
2020-2021

Government of the Republic of Korea
2018-2020

Dongguk University
2015-2018

Korea Polytechnic University
2018

Gwangju Institute of Science and Technology
2013-2017

Samsung (South Korea)
1994-2014

Korea Institute of Materials Science
2011

Perovskite solar cells (PeSCs) have been considered one of the competitive next generation power sources. To date, light-to-electric conversion efficiencies rapidly increased to over 10% and further improvements are expected. However, poor device reproducibility PeSCs ascribed their inhomogeneously covered film morphology has hindered practical application. Here, we demonstrate high-performance with superior by introducing small amounts N-cyclohexyl-2-pyrrolidone (CHP) as a controller into...

10.1038/srep06953 article EN cc-by-nc-nd Scientific Reports 2014-11-07

Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced nanoporous (NP) WO3-x using anodic treatment in room-temperature process. The NP showed bipolar switching characteristics and ION/IOFF ratio of ∼10(5). also stable retention time over 5 × 10(5) s, outstanding cell-to-cell uniformity,...

10.1021/acsnano.6b02711 article EN ACS Nano 2016-08-02

The universal role of high-k fluorinated dielectrics in assisting the carrier transport transistors for a broad range printable semiconductors is explored. These results present general rules how to design dielectric materials and achieve devices with high concentration, low disorder, reliable operation, robust properties. As service our authors readers, this journal provides supporting information supplied by authors. Such are peer reviewed may be re-organized online delivery, but not...

10.1002/adma.201501967 article EN Advanced Materials 2015-11-25

Abstract Dark current density ( J dark ) is the most important factors determining signal‐to‐noise ratio, linear dynamic range and detectivity D * of organic photodetectors (OPDs). However, solution‐processed OPDs generally suffer from high under bias because origin still remains unclear related to complicate factors. In this work, effect fluorinated alkyl side chain (FAC) conjugated polymers (CPs) on OPD performance systematically investigated according number fluorine atom. The OPDs,...

10.1002/adfm.202108026 article EN Advanced Functional Materials 2021-10-13

Abstract Ultra-flexible organic photovoltaics (OPVs) are promising candidates for next-generation power sources owing to their low weight, transparency, and flexibility. However, obtaining ultra-flexibility under extreme repetitive mechanical stress while maintaining optical transparency remains challenging because of the intrinsic brittleness transparent electrodes. Here, we introduce strain-durable ultra-flexible semitransparent OPVs with a thickness below 2 μm. The conformal surface...

10.1038/s41528-023-00260-5 article EN cc-by npj Flexible Electronics 2023-06-03

We report the fabrication of high-performance, printed, n-channel organic field-effect transistors (OFETs) based on an N,N-dialkyl-substituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative, PDI-RCN2, optimized by solvent-vapor annealing (SVA) process. performed a systematic study influence solubility and chemical structure solvent used for SVA process ordering orientation PDI-RCN2 molecules in thin film. The film showed improved crystallinity under vapor with aliphatic...

10.1021/am4029075 article EN ACS Applied Materials & Interfaces 2013-10-18

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F − OH , respectively, which are considered as organic dopants efficient cost‐effective n‐doping processes both n‐type nanocarbon‐based semiconductors, such poly[[ N...

10.1002/adfm.201602610 article EN Advanced Functional Materials 2016-09-20

Single-walled carbon nanotubes (SWNTs) are valued for their high carrier mobility, tunable band gaps, and strong mechanical properties, making them promising electronic applications. However, the presence of metallic SWNTs in mixtures impairs device performance, requiring isolation semiconducting (sc-SWNTs). Conjugated polymer wrapping is a leading technique this selective separation owing to its simplicity selectivity; however, challenges persist achieving optimal SWNT density, uniformity,...

10.1021/acs.langmuir.5c00294 article EN Langmuir 2025-04-10

N-channel organic field-effect transistors (OFETs) have generally shown lower mobilities (μFET) than their p-type counterparts. One of the reasons is energetic misalignment between work function (WF) commonly used charge injection electrode, i.e. gold (Au), and lowest unoccupied molecular orbital (LUMO) n-channel electron-transporting semiconductors. Here, we report barium salts as solution-processed interlayers, to improve electron-injection and/or hole-blocking in top-gate/bottom-contact...

10.1021/am502007j article EN ACS Applied Materials & Interfaces 2014-06-03

Charge transport in carbon nanotube network transistors strongly depends on the properties of gate dielectric that is direct contact with semiconducting nanotubes. In this work, we investigate effects charge polymer-sorted single-walled field-effect (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (εr) fluoropolymer (CYTOP, εr = 1.8), poly(methyl methacrylate) (PMMA, 3.3), and a high-εr ferroelectric relaxor [P(VDF-TrFE-CTFE), 14.2]. The s-SWNT-FETs dielectrics...

10.1021/acsami.6b06882 article EN ACS Applied Materials & Interfaces 2016-11-08

Ultra-flexible organic photovoltaic (OPV) devices are gaining recognition due to their lightweight, mechanical flexibility, and high productivity potential emerging as a notable alternative power source. Significant enhancements in material design device architecture have facilitated near 20% of conversion efficiencies (PCEs). To elevate PCE further, the integration soft optical elements is pivotal, enabling optimized photon utilization by minimizing reflection augmenting path through...

10.1063/5.0177720 article EN Applied Physics Letters 2024-01-08

Abstract Sol–gel indium–gallium–zinc oxide (IGZO) semiconductors are developed as active components of thin‐film transistors (TFTs) because their high electron mobility, cost‐effective large‐area fabrication, and applicability for flexible substrates. Controlling oxygen vacancies ( V o ) in the IGZO semiconductor channel is always problematic reliable long‐term operation. Surplus interfacial charges inside cause negative shifts threshold voltages th ), resulting depletion‐mode operation...

10.1002/admi.202200032 article EN Advanced Materials Interfaces 2022-02-26

Achieving energy-efficient and high-performance field-effect transistors (FETs) is one of the most important goals for future electronic devices. This paper reports semiconducting single-walled carbon nanotube FETs (s-SWNT-FETs) with an optimized high-

10.1088/1361-6528/ad3e01 article EN cc-by-nc-nd Nanotechnology 2024-04-12

Abstract Efficient charge injection is critical for flexible organic electronic devices such as light-emitting diodes (OLEDs) and field-effect transistors (OFETs). Here, we investigated conjugated polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWNTs) solution-processable charge-injection layers in ambipolar with poly(thienylenevinylene-co-phthalimide)s. The interlayers were prepared using poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) or poly(9,9-dioctylfluorene)...

10.1038/srep10407 article EN cc-by Scientific Reports 2015-05-22

The interfacial properties of PEDOT:PSS, pristine r-GO, and r-GO with sulfonic acid (SR-GO) in organic photovoltaic are investigated to elucidate electron-blocking property PEDOT:PSS anode layer (AIL), explore the possibility as layers. SR-GO results an optimized power conversion efficiency 7.54% for PTB7-th:PC71BM 5.64% P3HT:IC61BA systems. By combining analyses capacitance-voltage photovoltaic-parameters dependence on light intensity, it is found that recombination process at SR-GO/active...

10.1021/am503989u article EN ACS Applied Materials & Interfaces 2014-10-24

We report the synthesis of composite interlayers using alcohol-soluble polyfluorene (ASP)-wrapped single-walled carbon nanotubes (SWNTs) and their application as electron-transport layers for efficient organic solar cells. The ASP enables individual dispersion SWNTs in solution. ASP-wrapped SWNT solutions are stable 54 days without any aggregation or precipitation, indicating very high stability. Using a cathode interlayer on zinc oxide nanoparticles (ZnO NPs), power conversion efficiency...

10.1021/acsami.9b22933 article EN ACS Applied Materials & Interfaces 2020-02-20

In this article, two D–A-type quinoxaline-based polymers with multiple fluorine atoms, denoted by PB-QxF and PBF-QxF, were synthesized tested for polymer solar cells (PSCs).

10.1039/d0ta09354h article EN Journal of Materials Chemistry A 2020-01-01

Here, we report the simultaneous attainment of efficient electron injection and enhanced stability under ambient conditions for top-gate/bottom-contact (TG/BC), n-type, organic field-effect transistors (OFETs) using water-soluble polyfluorene derivatives (WPFs). When inserting WPF interlayers between a semiconductor BC Au electrodes, initially ambipolar (6,6)-phenyl-C61butyric acid methyl ester (PCBM) OFETs were fully converted to unipolar charge transport characteristics that exclusively...

10.1021/am500466q article EN ACS Applied Materials & Interfaces 2014-05-19

Creating an orthogonal printable hole-transporting layer (HTL) without damaging the underlying is still a major challenge in fabricating large-area printed inverted polymer solar cells (PSCs). In this study, we prepared orthogonal-processable fluorine-functionalized reduced graphene oxide (FrGO) series with various two-dimensional sheet sizes such as large-sized FrGO (1.1 μm), medium-sized (0.7 and small-sized (0.3 μm) systematically investigated size effect of FrGOs on hole transport...

10.1021/acsami.0c11384 article EN ACS Applied Materials & Interfaces 2020-08-17

Solution-processed semiconducting carbon nanotube transistors with a high mobility and an ON/OFF ratio are the most promising for use in flexible electronics. In this paper, we report low-k/high-k bilayer polymer dielectrics solution-processed single-walled (s-SWNT) field-effect (s-SWNT-FETs) efficient charge transport operation at low voltage. Thin low-k polystyrene (10 nm) is used first contact insulator channel order to passivate dipolar disorder induced by high-k insulators. The second...

10.1063/1.4991056 article EN Applied Physics Letters 2017-09-18
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