A5014493844- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Magnetic and transport properties of perovskites and related materials
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Magnetic properties of thin films
- Acoustic Wave Resonator Technologies
- Physics of Superconductivity and Magnetism
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Magnetic Properties and Applications
- Magnetic Properties of Alloys
- Advanced Memory and Neural Computing
- Magneto-Optical Properties and Applications
- Dielectric properties of ceramics
- 2D Materials and Applications
- Microwave Dielectric Ceramics Synthesis
- Force Microscopy Techniques and Applications
- Photorefractive and Nonlinear Optics
- Electron and X-Ray Spectroscopy Techniques
- Rare-earth and actinide compounds
- Characterization and Applications of Magnetic Nanoparticles
- Perovskite Materials and Applications
- ZnO doping and properties
- High-pressure geophysics and materials
University of California, Berkeley
2016-2025
Lawrence Berkeley National Laboratory
2015-2024
Rice University
2023-2024
Berkeley College
1990-2024
Donostia International Physics Center
2024
Centre National de la Recherche Scientifique
2024
Universidad de Cantabria
2023
Indian Institute of Science Bangalore
2023
ORCID
2021
Cornell University
2014-2020
A negative isotropic magnetoresistance effect more than three orders of magnitude larger the typical giant some superlattice films has been observed in thin oxide perovskite-like La(0.67)Ca(0.33)MnOx. Epitaxial that are grown on LaAIO(3) substrates by laser ablation and suitably heat treated exhibit values as high 127,000 percent near 77 kelvin approximately 1300 room temperature. Such a phenomenon could be useful for various magnetic electric device applications if effects material...
Imagine you are in the last stages of typing your thesis, year is 1980, and it's a hot, hazy summer afternoon, thunderstorm brews on horizon. Tense tired, have forgotten to save document hard disk. Suddenly, lightning strikes! Your computer shuts down. final chapter lost.
Piezoelectric materials, which convert mechanical to electrical energy and vice versa, are typically characterized by the intimate coexistence of two phases across a morphotropic phase boundary. Electrically switching one other yields large electromechanical coupling coefficients. Driven global environmental concerns, there is currently strong push discover practical lead-free piezoelectrics for device engineering. Using combination epitaxial growth techniques in conjunction with theoretical...
Lead free perovskite solar cells based on a CsSnI3 light absorber with spectral response from 950 nm is demonstrated. The high photocurrents noted in the system are consequence of SnF2 addition which reduces defect concentrations and hence background charge carrier density.
Working in concert, theorists and experimentalists have found promising new ways to get two traditional foes—ferroelectricity magnetism—to coexist
The study of magnetoelectric materials has recently received renewed interest, in large part stimulated by breakthroughs the controlled growth complex and search for novel with functionalities suitable next generation electronic devices. In this Progress Report, we present an overview recent developments field, emphasis on coupling effects oxide multiferroic composite materials.
We demonstrate a highly reproducible control of local electron transport through ferroelectric oxide via its spontaneous polarization. Electrons are injected from the tip an atomic force microscope into thin film lead-zirconate titanate, Pb(Zr0.2Ti0.8)O3, in regime tunneling assisted by high electric field (Fowler-Nordheim tunneling). The current exhibits pronounced hysteresis with abrupt switching events that coincide, within experimental resolution, large polarization PZT results up to...
The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials novel device architectures. Though the non-volatile market is dominated by flash now, it very low operation speed ~10 μs programming ms erasing time. Furthermore, can only withstand ~10(5) rewriting cycles, which prevents from becoming memory. Here we demonstrate that significant photovoltaic effect of ferroelectric...