Kenji Natori

ORCID: 0000-0001-6967-5258
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About
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Research Areas
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Nanowire Synthesis and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Teleoperation and Haptic Systems
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Geophysics and Sensor Technology
  • Electronic and Structural Properties of Oxides
  • Silicon Carbide Semiconductor Technologies
  • Network Time Synchronization Technologies
  • Silicon and Solar Cell Technologies
  • Microgrid Control and Optimization
  • Quantum and electron transport phenomena
  • Surface and Thin Film Phenomena
  • Adaptive Control of Nonlinear Systems
  • Robotics and Automated Systems
  • Advanced DC-DC Converters
  • Copper Interconnects and Reliability
  • Multilevel Inverters and Converters
  • Semiconductor Quantum Structures and Devices
  • Stability and Control of Uncertain Systems
  • HVDC Systems and Fault Protection
  • GaN-based semiconductor devices and materials

Chiba University
2015-2024

Tokyo Institute of Technology
2009-2016

Frontier Hospital
2013

Aoyama Gakuin University
2009-2012

University of Tsukuba
2000-2009

Keio University
2005-2009

Toshiba (Japan)
1979-2009

Toshiba (South Korea)
1986-2004

Fujitsu (Japan)
2002

The University of Tokyo
1971-2001

Experiments on ultra-small metal-oxide-semiconductor field effect transistors (MOSFETs) less than 100 nm have been widely reported recently. The frequency of carrier scattering events in these devices is diminished, so that further suppression may bring close to the regime ballistic transport. Carrier suppressed by constructing their channel regions with intrinsic Si and also low temperature operation. This article proposes transport carriers MOSFETs, presents current-voltage characteristics...

10.1063/1.357263 article EN Journal of Applied Physics 1994-10-15

This paper presents the effectiveness of a time-delay compensation method based on concept network disturbance and communication observer for bilateral teleoperation systems under time-varying delay. The most efficient feature is that it works without models (model-based approaches like Smith predictor usually need models). Therefore, expected to be widely applied network-based control systems, in which time delay unknown varying. In this paper, validity cases both constant verified by...

10.1109/tie.2009.2028337 article EN IEEE Transactions on Industrial Electronics 2009-08-11

This paper presents a design method of time-delayed control systems. Because the tremendous spread computer networks, strategies for systems are needed network-based (NBCSs) and other network applications. Although model-based or predictive methods (like Smith predictor) often used time-delay compensation, performance deteriorates when value time delay is uncertain. In these circumstances, novel time-delay-compensation based on concept disturbance (ND) communication observer (CDOB) has been...

10.1109/tie.2008.918635 article EN IEEE Transactions on Industrial Electronics 2008-05-01

The static value of the effective dielectric constant in a thin film capacitor is simulated by means local field theory. it shows sharp decrease as thickness decreased an ultrathin geometry. This phenomenon due to size effect intrinsic structure and has nothing do with material aspect. more remarkable for larger values bulk constant. It recovered inserting interface layers atomic polarizability between electrode.

10.1063/1.121930 article EN Applied Physics Letters 1998-08-03

In a research field of network-based control systems (NBCSs), the time delay problem is one most significant issues. Efficient stabilization methods delayed enable NBCSs to be flexibly applied many kinds situations. A novel compensation method based on concept network disturbance (ND) and communication observer (CDOB) has been proposed. The same effectiveness as that Smith predictor. addition, since simple does not need model or measurement, it can easily implemented various applications....

10.1109/tii.2008.2002705 article EN IEEE Transactions on Industrial Informatics 2008-08-01

A general expression of the current–voltage characteristics a ballistic nanowire field-effect transistor (FET) is derived. At T=0, conductance, which equal to quantum conductance multiplied by number channels at zero bias, decreases stepwise toward current saturation as drain bias increased. The single-wall carbon nanotube FET in conduction are discussed based on band structure nanotube. When both gate overdrive and 1V, device made (19,0) 2-nm high-k insulator (ε=40ε0) flows 183μA, amounts...

10.1063/1.1840096 article EN Journal of Applied Physics 2005-01-05

In this paper, a detailed 3-D numerical analysis is carried out to study and evaluate CMOS logic device circuit performance of gate-all-around (GAA) Si nanowire (NW) field-effect transistors (FETs) operating in sub-22-nm technologies. Employing coupled drift-diffusion room temperature carrier transport formulation, with 2-D quantum confinement effects, we numerically simulate GAA NWFET electrical characteristics. The simulation predictions, on the performance, short channel their dependence...

10.1109/ted.2014.2335192 article EN IEEE Transactions on Electron Devices 2014-07-22

The drain breakdown phenomenon in ultra-thin-film (silicon-on-insulator) SOI MOSFETs has been studied. Two-dimensional simulation revealed that the thinning of film brings about an increase electric field due to two-dimensional effect, causing a significant lowering voltage, as commonly seen MOSFETs. also showed lowered voltage recovered almost its original value when thickness was restored, suggesting structure, rather than source, plays major role determining voltage. Experiments using...

10.1109/16.57164 article EN IEEE Transactions on Electron Devices 1990-01-01

A multi-layered MoS2 film was formed on a SiO2 by high-temperature sputtering, which is one of the alternative methods Si LSI technology. It found that carrier density sputter-deposited 1000 times smaller than an exfoliated one. By two different orientations, namely layer lateral to SiO2/Si substrate and perpendicular substrate, were formed. The showed lower because decrease in number sulfur vacancies, as commonly discussed several research studies. However, vacancies are not sufficient for...

10.7567/jjap.54.04dn08 article EN Japanese Journal of Applied Physics 2015-03-27

Current fluctuations with discrete levels, which are called random telegraph signals (RTSs), have been studied in small size metal-oxide-semiconductor field-effect transistors (MOSFETs) from both viewpoints of relative current change and correlated switchings. A large as much 30% has observed, even at room temperature. It behaves similarly normal RTSs terms statistics temperature dependence. found also 20-μm channel width MOSFETs. These results require another mechanism to explain addition...

10.1063/1.347116 article EN Journal of Applied Physics 1990-07-01

Smith predictor is a well-known method for compensating time delay in control systems. Therefore, it has been applied to many systems with so far. However, should be estimated precisely this method. So, if fluctuant and unpredictable, like the communication over Internet, performance of deteriorates. This paper proposes "Communication Disturbance Observer". It regards error caused by as disturbance torque (or acceleration), then can observe compensate error. Furthermore, doesn't need...

10.1109/iecon.2004.1432162 article EN 2005-05-24

Bilateral control is one of the methods teleoperation systems. Human operators can feel reaction force from remote environment by means this scheme. This paper presents a novel architecture for bilateral with/without time delay. The proposed system has three communication channels between master and slave robots. In concrete terms, two transmission position information side to channel side. controller three-channel does not include controller, i.e. only implemented in side, order improve...

10.1541/ieejias.127.1224 article EN IEEJ Transactions on Industry Applications 2007-01-01

The ballistic MOSFET characteristics are compared in detail with those of the experimental 70-nm device at low temperatures reported by Sai-Halasz et al. (1987). saturated region for V/sub G//spl les/0.8 V show good agreement and a proper consideration higher subbands significantly improves ges/1.0 V. discrepancy is large linear due to carrier scattering. backscattering mechanism bias effect discussed.

10.1109/led.2002.803765 article EN IEEE Electron Device Letters 2002-11-01

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Nanowire MOSFETs attract attention due to the probable high performance and excellent controllability of device current. We present a compact model ballistic nanowire MOSFET that aids our understanding physics overall properties device. The relationship between gate overdrive carrier density is derived combined with current expression yield current–voltage (<formula formulatype="inline"><tex...

10.1109/ted.2008.2008009 article EN IEEE Transactions on Electron Devices 2008-11-01

10.1016/j.apsusc.2008.02.150 article EN Applied Surface Science 2008-03-21

This paper reports on the control of direct-contact La-silicate/Si interface structure with aim achieving scaled equivalent oxide thickness (EOT) and small state density. The density at is found to be reduced <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{1.6} \times \hbox{10}^{11}\ \hbox{cm}^{-2}\hbox{eV}^{-1}$</tex></formula> by annealing 800 Notation="TeX">$^{\circ}\hbox{C}$</tex></formula>...

10.1109/ted.2011.2174442 article EN IEEE Transactions on Electron Devices 2011-12-03

To realize massive integration of distributed renewable energy resources in future power system, the development efficient measures for their is required. Using DC grid more and compatible storage devices. In next-generation network, many kinds nodes which consist generators, loads, devices, so on links (distribution lines) are connected. Thus, structure complex, flexible flow controls essential. a distribution only controllable parameter voltage nodes, thus it difficult to control each link...

10.1109/ecce.2014.6953475 article EN 2022 IEEE Energy Conversion Congress and Exposition (ECCE) 2014-09-01

Haptic sense is indispensable for skillful operation in a telerobotic system. Bilateral control attracts considerable interest because it transfers the haptic to remote place. Although simply composed of two manipulators, its design complicated. This study proposes an idea that provides new framework on bilateral The system based "function", minimum component role. It enables simple and explicit various tasks. features proposed method provide way adjustable system, Experimental results show...

10.1080/09398368.2006.11463616 article EN EPE Journal 2006-05-01

In a research area of bilateral teleoperation systems, time delay generated in communication line is one very serious problems. Time control systems induces severe phase delay. Then the possibly destabilizes system and deteriorates performance system. Therefore many studies about have been conducted so far. Some researches accomplished stabilization method or compensation constant However time-varying fluctuant has not completed. This paper introduces novel The based on concept network...

10.1109/amc.2006.1631661 article EN 2006-06-08

The error probability at a node of digital circuit exposed to thermal noise agitation is investigated and the minimal dissipation–reliability relation for practical electronic circuits derived. modeled by an inverter chain with ideal transfer characteristics, due spurious data caused fluctuation evaluated as function switching energy. maximal each allowed reliability requirement total system leads us energy dissipated per logical switching, which amounts around 12 eV in future 1010 gate...

10.1063/1.367317 article EN Journal of Applied Physics 1998-05-15

In any physical systems, there inevitably exists time delay. Since it has very characteristic and distinctive properties, control of delayed systems is even now a difficult unresolved problem. Therefore lot researches about delay have been studied so far. A distinguished compensation method Smith predictor. It can equivalently eliminates from closed loop stabilize systems. However precise model needed for implementation the method. therefore necessary to measure accurate time. these...

10.1109/iecon.2006.347769 article EN Proceedings of the Annual Conference of the IEEE Industrial Electronics Society 2006-11-01

Dielectric properties of Si(111) ultrathin films have been investigated using first-principles ground-states calculations in external electrostatic fields. With increasing thickness films, the optical dielectric constant evaluated at center slab converges to experimental bulk a only eight bilayers, while energy gap is still larger than that Si. The converged theoretical for Si 6.2% higher one. Furthermore, spatial variations also position-dependent macroscopic field given by clear-cut...

10.1063/1.2178703 article EN Journal of Applied Physics 2006-03-01
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