A5035186776- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Liquid Crystal Research Advancements
- Electromagnetic wave absorption materials
- Nonlinear Optical Materials Studies
- Advanced Antenna and Metasurface Technologies
- Solid-state spectroscopy and crystallography
- Advanced Memory and Neural Computing
- Metamaterials and Metasurfaces Applications
- Glass properties and applications
- Quantum Dots Synthesis And Properties
- Luminescence Properties of Advanced Materials
- Magnetic Properties and Synthesis of Ferrites
- Microwave Dielectric Ceramics Synthesis
- Acoustic Wave Resonator Technologies
- Perovskite Materials and Applications
- Pain Mechanisms and Treatments
- Material Properties and Applications
- Crystal Structures and Properties
- Rocket and propulsion systems research
- Ruminant Nutrition and Digestive Physiology
- Intermetallics and Advanced Alloy Properties
- Heat transfer and supercritical fluids
- Microwave-Assisted Synthesis and Applications
Jiangsu University of Technology
2015-2024
Soochow University
2023-2024
State Key Laboratory on Integrated Optoelectronics
2023-2024
Jiangxi University of Science and Technology
2020-2024
Zhejiang University
2017-2023
State Key Laboratory of Silicon Materials
2017-2023
Wuxi No.2 People's Hospital
2023
Jiangnan University
2023
Minzu University of China
2023
Guangxi Academy of Agricultural Science
2022
Rational control of photoluminescence against a change in temperature is important for fundamental research and technological applications. Herein, we report an anomalous dependence upconversion luminescence Yb/Ho co-doped Sc2Mo3O12 crystals. By leveraging negative thermal expansion the crystal lattice, energy transfer between lanthanide dopants promoted as increased from 303 to 573 K, resulting ∼5-fold enhancement emission. Meanwhile, emission profile also substantially altered due...
In order to improve the operation speed of phase change memory (PCM), superlattice-like Ge2Sb2Te5/Sb (SLL GST/Sb) thin films were prepared in a sputtering method explore suitability as an active material for PCM application. Compared with GST, SLL GST/Sb film has lower crystallization temperature, activation energy, thermal conductivity, and smaller crystalline grain size. A faster SET/RESET switching (10 ns) power consumption (the energy RESET 9.1 × 10−13 J) are obtained. addition, shows...
Clinical studies have revealed that patients with chronic pain are more likely to anxiety and depression, which often associated cognitive dysfunction. However, whether neuropathic can induce cognition dysfunction remains uncertain. Antidepressants nonsteroidal anti-inflammatory drugs treat pain, but they prevent is unknown. The present study was designed investigate the effects possible mechanisms of on learning memory, amitriptyline lornoxicam function.Sixty male Sprague-Dawley rats were...
Abstract Flexible information memory is the key component of flexible electronic devices and core intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films various thickness ratios were prepared using polyether ether ketone as substrate, their properties device conversion characteristics studied. After bending for 100000 times experiments with different radius, film can still realize transition from amorphous to crystalline states, resistance fluctuation was small....
Compared with pure Sb, N-doped Sb material was proved to be a promising candidate for the phase change memory (PCM) use because of its higher crystallization temperature (∼250 °C), larger activation energy (3.53 eV), and better data retention ability (166 °C 10 years). N-doping also broadened band gap refined grain size. The reversible resistance transition could achieved by an electric pulse as short 8 ns PCM cell based on material. A lower operation power consumption (the RESET 2.2 × 10−12...
Ultrasonic surface shot peening (USSP) treatment was conducted on the WC-8Co composite. The effects of different USSP-treated time roughness, microstructure, mechanical and corrosion resistance were investigated. results show that continuous bombardment cemented carbide induced by high kinetic energy particles during USSP makes WC Co phase broken refined. A nanostructured layer is generated top-surface WC-Co thickness about 3.14 µm. Due to polishing washing all samples, roughness don't...
This paper focused the effect of recombination HfO2 on phase change behavior and crystalline properties Ge1Sb9/HfO2 superlattice-like films. Compared with pure Ge1Sb9, film has higher crystallization temperature, better data retention ability larger activation energy, indicating excellent thermal stability. With increase thickness ratio, band gap becomes wider. Atomic force microscopy X-ray diffraction tests illustrate that composite layers can inhibit growth grain, reduce grain size have a...