Herein we demonstrate the controlled and reproducible fabrication of sub-5 nm wide gaps in single-layer graphene electrodes. The process is implemented for grown via chemical vapor deposition using an electroburning at room temperature vacuum. A yield over 95% gap formation obtained. This approach allows producing electrodes molecular electronics a large scale. Additionally, from Raman spectroscopy carried out simultaneously, can follow heating infer which happens.

Prevailing models of resistive switching arising from electrochemical formation conducting filaments across solid state ionic conductors commonly attribute the observed polarity voltage-biased to sequence active and inert electrodes confining memory cell. Here we demonstrate equivalent, stable behavior in metallic Ag-Ag$_{2}$S-Ag nanojunctions at room temperature. Our experimental results numerical simulations reveal that switchings is solely determined by geometrical asymmetry electrode...

We have identified two distinct electrical breakdown mechanisms yielding few nanometer wide graphene nanogaps.

In this study, the possibilities of noise tailoring in filamentary resistive switching memory devices are investigated. To end, resistance and frequency scaling low-frequency 1/f-type properties studied representative mainstream material systems. It is shown that overall floor tailorable by proper choice, as demonstrated order-of-magnitude smaller levels Ta2O5 Nb2O5 transition-metal oxide memristors compared to Ag-based devices. Furthermore, variation states allows orders-of-magnitude tuning...

The resistive switching behavior in SiOx-based phase change memory devices confined by few nanometer wide graphene nanogaps is investigated. Our experiments and analysis reveal that the dynamics not only determined commonly observed bias voltage dependent set reset times. We demonstrate an internal time scale, dead time, plays a fundamental role system's response to various driving signals. associate with formation of microscopically distinct SiOx amorphous crystalline phases between...

The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. analysis low-frequency noise spectra revealed that main electronic contribution arises from resistance due to internal dynamical defects nanofilaments. resulting 0.01-1% ratio, i.e. total level with respect mean value current, is found be universal: its magnitude only depends on...

Due to its remarkable switching effect in electrical and optical properties, VO2 is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with rational deposition technique, still challenging. Here, we propose optimize simple fabrication method rich layers by oxidation metallic atmospheric air. It was shown that sufficiently broad annealing time window 3.0–3.5 h can be obtained at an optimal temperature 400 °C. The...

Experimental correlation analysis and first-principles theory are used to probe the structure evolution of Ag-CO-Ag single-molecule junctions both before formation after rupture junctions. Two dimensional histograms conditional demonstrate that prior bridge configuration CO molecule is already bound parallel Ag single-atom contact. This molecular precursor accompanied by opening additional conductance channels compared single-channel transport in pure monoatomic To investigate post-rupture...

The effect of pulse direct current (DC) reactive ion co-sputtering parameters on the morphology, crystal structure, residual stress, band gap, and piezoelectric properties Al(1-x)ScxN thin film deposited in large target-to-substrate distance (TSD) system has been studied using Scanning Probe Microscopy, X ray Diffractometry, Spectroscopic Ellipsometry, profilometer, among others. process pressure was revealed to be key factor which essentially determines quality for such system. As low as...

Silver plays a prominent role as an active material in resistive-switching memory devices (memristors) based on electrochemical metallization. Such structure contains its volume nanoscale Ag filaments, which can be used artificial synapses neural-network applications. Meanwhile, fundamentally different type of resistive switching occurs atomic wire pure Ag, where embedding, ion-hosting environment is absent. This comparative study clarifies the characteristics and origins latter, purely...

Abstract Graphene nanogaps are considered as essential building blocks of two-dimensional electronic circuits, they offer the possibility to interconnect a broad range atomic-scale objects. Here we provide an insight into microscopic processes taking place during formation graphene through detailed analysis their low-frequency noise properties. Following evolution level, identify fundamentally different regimes throughout nanogap formation. By modeling resistance and bias dependence noise,...

In this paper, we review the 1/ f -type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires.The functionality such ultrasmall is confined to an extremely small volume, where bulk considerations loose their validity: relative contribution a fluctuator heavily depends its distance from device bottleneck, characteristics are sensitive nanometer-scale geometry details mostly...

Volatile memory devices relying on the Mott-type insulator-to-metal transition of vanadium oxide (VO2) are widely utilized in field neuromorphic computing. Such devices, however, realized a nanoscale geometry, where switching relies self-heating an ultrasmall spot as well presence extremely high electric fields active region. In this paper, we investigate interplay such thermal and nonlinear electronic phenomena by investigating temperature voltage dependent conduction properties our...

Resistive switching memory devices hold extensive possibilities for realizing artificial neural networks along with nonconventional computing paradigms. Studying and understanding phenomena arising at single resistive elements is necessary utilizing their particular traits computation. Tuning the variability of set time─the timespan before onset transition from a high-resistance OFF state to low-resistance ON state─is key making use inherently stochastic nature resistance effect. Here, we...

Beyond-Moore computing technologies are expected to provide a sustainable alternative the von Neumann approach not only due their down-scaling potential but also via exploiting device-level functional complexity at lowest possible energy consumption. The dynamics of Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified rich and reliable source complexity. However, its full high-speed low-power operation largely unexplored. We fabricated nanoscale...

Összefoglalás. Napjainkra az információs technológiák fejlődése elérte azt a szintet, ahol gyorsuló ütemben létrejövő adattömeg feldolgozásához már sok esetben elégtelenek klasszikus, Neumann-elvek alapján működő számítógépek. A jelenség újszerű szoftveres megoldások, biológiai ihletésű algoritmusok, neurális hálózatok elterjedéséhez vezetett, ám ezek hatékony alkalmazásához teljesen új hardveres megoldások szükségesek. Jelen kézirat ilyen architektúrákhoz fejlesztett, Si-mikrochip-alapú...

Beyond-Moore computing technologies are expected to provide a sustainable alternative the von Neumann approach not only due their down-scaling potential but also via exploiting device-level functional complexity at lowest possible energy consumption. The dynamics of Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified rich and reliable source complexity. However, its full high-speed low-power operation largely unexplored. We fabricated nanoscale VO

Autonomous Neural Information Processing by a Dynamical Memristor CircuitAndrás Halbritter a, c, Dániel Molnár Tímea Nóra Török d, Roland Kövecs László Pósa Péter Balázs György Nadia Jimenez Olalla Zoltán Balogh Juerg Leuthold János Volk Miklós Csontos ca Department of Physics, Institute Budapest University Technology and Economics, Muegyetem rkp. 3, H-1111 Budapest, Hungaryb Electromagnetic Fields, ETH Zurich, Gloriastrasse 35, 8092 Switzerlandc HUN-REN-BME Condensed Matter Research Group,...

The formation and dissolution of silver nanowires plays a fundamental role in broad range resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that may also appear pure metallic lacking any silver-ion-hosting embedding environment, but this atomic mechanism differs from conventional electrochemical-metallization-based switching. To facilitate quantitative description former phenomenon, we investigate Ag junctions with...

Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still its infancy, awaiting realization efficient signal recognition functionalities. Here we experimentally demonstrate an information processing unit that can detect a temporal pattern very noisy environment, fire single output spike upon successful detection and reset itself fully...

Applying Neurodynamic Behavior of Mott Memristors for Auditory SensingTímea Nóra Török a, b, Roland Kövecs László Pósa Ferenc Braun György Molnár Nguyen Quoc Khánh András Halbritter c, János Volk ba Department Physics, Institute Budapest University Technology and Economics, Muegyetem rkp. 3, H-1111 Budapest, Hungaryb Technical Physics Materials Science, HUN-REN Centre Energy Research, Konkoly-Thege M. út 29-33, 1121 Hungary.c HUN-REN-BME Condensed Matter Research Group, Műegyetem 3.,...

Noise-Spectroscopy-Motivated Improvements in Memristor-Based Neuromorphic Applications: From Comprehensive Noise Analysis to Controlled Manipulation StrategiesZoltan Balogh a, b, Anna Nyáry Botond Sánta János Gergő Fehérvári Sebastian Werner Schmid László Pósa c, Miklós Csontos d, András Halbritter ba Department of Physics, Institute Budapest University Technology and Economics, Muegyetem rkp. 3, H-1111 Budapest, Hungaryb HUN-REN-BME Condensed Matter Research Group, Műegyetem 3., Hungary.c...

An oxygen-free lithographical fabrication method enables room temperature atomic switches terminated by oxygen sensitive metals.