A5076478939- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Coastal wetland ecosystem dynamics
- Perovskite Materials and Applications
- Nonlinear Optical Materials Studies
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Land Use and Ecosystem Services
- Advanced Thermoelectric Materials and Devices
- Graphene research and applications
- Carbon Nanotubes in Composites
- Neural Networks and Reservoir Computing
- Advanced Computational Techniques and Applications
- Business Process Modeling and Analysis
- Conservation, Biodiversity, and Resource Management
- Inflammatory mediators and NSAID effects
- Solid-state spectroscopy and crystallography
- Microgrid Control and Optimization
- Advanced DC-DC Converters
- Total Knee Arthroplasty Outcomes
- Nanowire Synthesis and Applications
- Machine Learning in Materials Science
- MXene and MAX Phase Materials
Xi'an Jiaotong University
2017-2024
Ningbo Science and Technology Bureau
2022-2024
RWTH Aachen University
2020-2024
East China Normal University
2020-2024
Changshu Institute of Technology
2023
Cangzhou Central Hospital
2023
People's Hospital of Cangzhou
2018-2023
Shanghai Advanced Research Institute
2022
Shanghai Jiao Tong University
2022
Yulin University
2019
Artificial intelligence and other data-intensive applications have escalated the demand for data storage processing. New computing devices, such as phase-change random access memory (PCRAM)-based neuro-inspired are promising options breaking von Neumann barrier by unifying with in cells. However, current PCRAM devices considerable noise drift electrical resistance that erodes precision consistency of these devices. We designed a heterostructure (PCH) consists alternately stacked confinement...
Interfacial complexions formed by Gibbs adsorption of Ag retard the Ostwald ripening CdTe precipitates in SnTe, minimizing thermal conductivity. Combined with band convergence, a high and stable zT 1.5 is obtained SnAg 0.05 Te-6%CdSe.
Phase-change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting data storage density. One may drastically reduce programming by patterning PCM volume down to nanometer scale, but that route incurs stiff penalty from tremendous cost associated with complex nanofabrication protocols required. Instead, here materials solution resolve this dilemma is offered. The authors work memory cells...
Abstract Disentangling nucleation and growth in materials that crystallize on the nanosecond time scale is experimentally quite challenging since relevant processes also take place very small, i.e., sub‐micrometer length scales. Phase change are bad glass formers, which often rapidly. Here systematic changes crystallization kinetics shown pseudo‐binary compounds of GeTe Sb 2 Te 3 related solids subjected to short laser pulses. Upon stoichiometry, speed by three orders magnitude concomitantly...
Abstract Tailoring the degree of disorder in chalcogenide phase‐change materials (PCMs) plays an essential role nonvolatile memory devices and neuro‐inspired computing. Upon rapid crystallization from amorphous phase, flagship Ge–Sb–Te PCMs form metastable rocksalt‐like structures with unconventionally high concentration vacancies, which results disordered crystals exhibiting Anderson‐insulating transport behavior. Here, ab initio simulations experiments are combined to extend these concepts...
Metavalent bonding (MVB) is characterized by the competition between electron delocalization as in metallic and localization covalent or ionic bonding, serving an essential ingredient phase-change materials for advanced memory applications. The crystalline exhibits MVB, which stems from highly aligned p orbitals results large dielectric constants. Breaking alignment of these chemical bonds leads to a drastic reduction In this work, it clarified how MVB develops across so-called van der...
Abstract In the past decade, there has been tremendous progress in integrating chalcogenide phase-change materials (PCMs) on silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications. particular, these non von Neumann computational elements and systems benefit from mass manufacturing of integrated circuits (PICs) 8-inch wafers using a 130 nm complementary metal-oxide semiconductor line. Chip based deep-ultraviolet lithography electron-beam enables...
Chalcogenide phase-change materials (PCMs) are showing versatile possibilities in cutting-edge applications, including non-volatile memory, neuromorphic computing, and nano-photonics. However, for embedded memory conventional PCMs suffer from insufficient thermal stability because of their relatively low crystallization temperatures (Tx). Although doping with additional alloying elements could improve the amorphous stability, it also increases tendency towards compositional partitioning...
Disorder plays an essential role in shaping the transport properties of GeSbTe phase-change materials (PCMs) to enable nonvolatile memory technology. Recently, increasing efforts have been undertaken investigate disorder stable hexagonal phase compounds, focusing on a special type swapping bilayer defects. This configuration has claimed be key element for new mechanism memory. Here, we report direct atomic-scale chemical identification these defects GeSb2Te4 together with nanoscale atomic...
Chalcogenides such as GeTe, PbTe, Sb2 Te3 , and Bi2 Se3 are characterized by an unconventional combination of properties enabling a plethora applications ranging from thermo-electrics to phase change materials, topological insulators, photonic switches. possess pronounced optical absorption, relatively low effective masses, reasonably high electron mobilities, soft bonds, large bond polarizabilities, thermal conductivities. These remarkable characteristics linked bonding mechanism...
In glasses, secondary (β-) relaxations are the predominant source of atomic dynamics. Recently, they have been discovered in covalently bonded i.e., amorphous phase-change materials (PCMs). However, it is unclear what mechanism β-relaxations covalent systems and how related to crystallization behaviors PCMs that crucial properties for non-volatile memories neuromorphic applications. Here we show direct evidence strongly linked β-relaxations. We find β-relaxation Ge15Sb85 possesses a high...
Materials with layered crystal structures and high in-plane anisotropy, such as black phosphorus, present unique properties thus promise for applications in electronic photonic devices. Recently, the of GeS2 GeSe2 were utilized high-performance polarization-sensitive photodetection short wavelength region due to their optical anisotropy wide band gap. The highly complex, low-symmetric (monoclinic) are at origin but structural nature corresponding nanostructures remains be fully understood....
A novel 2D phase of germanium dichalcogenides (GeTe<sub>2</sub>) is achieved by engineering the composition a GeSbTe heterostructure.
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for non-volatile neuromorphic computing devices. To RESET the cell, crystalline has to undergo firstly liquid state then an amorphous state, corresponding abrupt change electrical resistance. In this work, we demonstrate progressive amorphization process GeSb2Te4...
The layered crystal structure of Cr2 Ge2 Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pulses can trigger amorphization material in nanoscale electronic devices, and it is unclear whether loss structural leads to a change magnetic properties. Here, demonstrated that preserves spin-polarized nature amorphous phase, but undergoes transition spin glass state below 20 K. Quantum-mechanical computations...
Carbon nanorods and graphene-like nanosheets are catalytically synthesized in a hot filament chemical vapor deposition system with without plasma enhancement, gold used as catalyst. The morphological structural properties of the carbon investigated by field-emission scanning electron microscopy, transmission microscopy micro-Raman spectroscopy. It is found that formed when CH4 + H2 N2 present while methane environment plasma. formation analyzed. results suggest primarily precipitation...
Interfacial phase‐change memory (iPCM) based on layer‐structured Ge‐Sb‐Te crystals has been recently proposed, offering an energy‐efficient implementation of nonvolatile cells and supplementing the development Ge‐Sb‐Te‐based random access memories (PRAMs). Although working principle iPCM is still under debate, it believed that layer‐switching plays a role in switching process between low‐resistance high‐resistance states cells. However, Ge forming swapped bilayers—the key elements for...
Abstract While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets foils of is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It recently reported few single‐crystalline 2D van der Waals (vdW) semiconductors, such as InSe, deformable under compressive stress. Here it demonstrated intralayer toughness...
Abstract Chalcogenide phase-change materials (PCMs), in particular, the flagship Ge 2 Sb Te 5 (GST), are leading candidates for advanced memory applications. Yet, GST conventional devices suffer from high power consumption, because RESET operation requires melting of crystalline phase. Recently, we have developed a conductive-bridge scheme low-power application utilizing self-decomposed Ge-Sb-O (GSO) alloy. In this work, present thorough structural and electrical characterizations GSO thin...