A5089537968- Radiation Effects in Electronics
- VLSI and Analog Circuit Testing
- Semiconductor materials and devices
- Radiation Detection and Scintillator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Physical Unclonable Functions (PUFs) and Hardware Security
- Distributed systems and fault tolerance
- Radiation Therapy and Dosimetry
- Particle Detector Development and Performance
- Photoreceptor and optogenetics research
- Neuroscience and Neural Engineering
- Dark Matter and Cosmic Phenomena
- Astrophysics and Cosmic Phenomena
- Reliability and Maintenance Optimization
- Nuclear Physics and Applications
- Spacecraft Design and Technology
- Atomic and Subatomic Physics Research
- Neural dynamics and brain function
- Fusion materials and technologies
- Particle Accelerators and Free-Electron Lasers
- Parallel Computing and Optimization Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Graphite, nuclear technology, radiation studies
- Neutrino Physics Research
Los Alamos National Laboratory
1990-2024
The Aerospace Corporation
2006-2018
Case Western Reserve University
2018
Proton (Malaysia)
2013
Ball (France)
2013
Pierre Fabre (France)
2008
Goddard Space Flight Center
2006
This paper describes the Magnetic Electron Ion Spectrometer (MagEIS) instruments aboard RBSP spacecraft from an instrumentation and engineering point of view. There are four magnetic spectrometers each two spacecraft, one low-energy unit (20–240 keV), medium-energy units (80–1200 a high-energy (800–4800 keV). The high also contains proton telescope (55 keV–20 MeV). focus electrons within selected energy pass band upon focal plane several silicon detectors where pulse-height analysis is used...
This study examines the single-event response of Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for effects on configuration SRAM cells, user-accessible Flip-Flop and BlockRAM™ memory are provided. also describes an unconventional single event latch-up signature observed during testing.
SRAM-based reconfigurable programmable logic is widely used in commercial applications and occasionally space flight because of susceptibility to single-event upset (SEU). Upset detection mitigation schemes have been tested on the Xilinx Virtex II X-2V1000 heavy-ion proton irradiation control accumulation SEUs mitigate their effects intended operation. Non-intrusive partial reconfiguration combination with TMR can repair design maintain state information. In-beam results a simple test...
A comparison of heavy-ion and proton-induced single event effect sensitivities has been made using the Xilinx Virtex-II field programmable gate array (FPGA). Recently fabricated test samples are selected for observations upset functional interrupt. complex relationship appears to exist between heavy ion proton due effects such as multiple-bit upsets elastic nuclear scattering.
This study examines the single-event response of Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for latch-up and upset on configuration SRAM cells Block RAM memories are provided.
We present single event upset sensitivities for three Xilinx Virtex-4 field-programmable-gate-array (FPGA) devices in protons and heavy ions. Upsets are identified each functional block results compared with previous device generations
We performed SEE and TID testing on select electronic parts used for the upcoming Near Infrared Airglow Camera (NIRAC) mission to International Space Station.
Radiation Test Consortium (XRTC) single-event measurements for three of the latest generation radiation-tolerant reconfigurable FPGAs from Xilinx (90 nm, copper- interconnected, thin-epitaxial CMOS) are presented. Results include proton and heavy-ion upset susceptibilities unclocked memory elements, high-temperature latchup immunity a low SEFI rate (e.g., ~one/device-century in geosynchronous orbit).
Heavy-ion irradiation and fault injection experiments were conducted to evaluate the upset sensitivity of Xilinx Virtex-II field programmable gate arrays (FPGAs) input/output block (IOB). Full triple module redundancy (TMR) IOBs, in combination with regular configuration scrubbing, proved be a quite effective mitigation method.
Single-event upsets (SEUs) were measured in thermal neutron-irradiated microcontrollers with 65- and 130-nm-node static random-access memories (SRAMs). The suspected upset mechanism is charge deposition from the energetic byproducts of <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> B neutron capture. Although elemental analysis confirmed that both contain B, only 65-nm node microcontroller exhibited a strong response to neutrons. Monte...
Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other initiated by high LET ions semi-permanent.
SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well control circuit sections have been measured.
SEE sensitivity to protons and heavy ions is observed with several types of DDR3 SDRAMs. Upsets in control sections various error output patterns have been measured along upsets memory storage elements.
Proton single event dielectric rupture was observed in Analog Devices OP470 devices only when the package included gold flashing facing die on inner surface of metal lid. The supply voltage also a factor. Analysis shows that proton fission fragments have linear energy transfer and range to cause this effect. physics reactions radiation hardness assurance implications are explored.
Semi-permanent upset sensitivity in DDR SDRAMs is investigated. A technique to reduce examined. The reduction extends high LET regions for some heavy ion induced upsets.
Here we propose to quantify local temperature variations using thermal imaging assess the effect of dermatological lasers.To raise induced by laser application and differentiate effects a potassium titanyl phosphate (KTP) an intense pulsed light (IPL).A randomized comparative study was performed on 10 adult volunteers with symmetrical rosacea treated KTP or IPL. Skin measurements were inclusion, immediately after treatment 3 min water application, high-resolution (0.08 degrees C) infrared...
Synergistic effects of total ionizing dose and particle fluence on SEU sensitivity static random access memories have been investigated. The memory imprint effect has observed to yield varying results.
We present single event effect (SEE) and total ionizing dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well comparing this with earlier technology nodes from the same manufacturer
Single-event effects (SEE) evaluation of five different part types next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {V}_{\mathrm { {DS}}}$ </tex-math></inline-formula> ) following test campaign that exposed >50 samples per type to heavy ions. These...
We report on single event upsets (SEU) and latchup (SEL) sensitivities under irradiation by protons heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared previously measured similar devices larger features. discuss the sensitivity trends temperature examine other effects such as stuck bits.
Zynq UltraScale+ field programmable gate arrays (FPGAs) were tested for single event effects with heavy ions and protons. SEEs such as SEU SEL detected. Destructive SELs avoided.
Energetic particle radiation can have a profound impact on the performance and survivability of electronic devices in environments. This paper will provide an introduction to most common types effects microelectronics more approaches for mitigation.
TLK2711 transceivers belonging to the Class V dice manufactured by Texas Instruments were tested for their sensitivity radiation. We measured single event effects as well total ionizing dose effects.
We performed proton and heavy-ion testing of the Microsemi Igloo2 FPGA using several basic designs looking at logic, embedded SRAM, mathblocks as well any SEFI or high current states.