A5075287292- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Neural dynamics and brain function
- Advanced Memory and Neural Computing
- Neuroscience and Neural Engineering
- GaN-based semiconductor devices and materials
- Electronic and Structural Properties of Oxides
Shenzhen Institute of Information Technology
2024
Sun Yat-sen University
2020-2024
This work presents the optimization of a NiO/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 heterojunction diode (HJD) by adjusting structural parameters NiO layer. A rapid thermal annealing (RTA) process was utilized to modulate hole concentration sputtered NiO. The influence layer geometry and its on HJDs' electrical properties has been thoroughly...
In this research, solution-processed NiO-based memristors have been demonstrated with three resistive switching modes, including analog switching, volatile threshold and nonvolatile digital where the specific behavior is determined by applied bias voltage compliance current. The achieved via local oxygen ion migration at NiO/Ag interface under low stress. Based on mode, several synaptic functions are mimicked. When device stressed using a high current, changes to switching. This allows...
Abstract The growing demand for efficient solar-blind ultraviolet photodetectors has fueled interest in the exceptional properties of β-Ga2O3. Here, with a metal-semiconductor-metal (MSM) structure are fabricated based on β-Ga2O3 thin films. (2-01) oriented is grown c-plane sapphire using metal-organic chemical vapor deposition (MOCVD). Hydrogen as shallow donor introduced into surface layer selectively area underneath contacts by plasma treatment to enhance ohmic contact. As result,...
High-quality ε-Ga 2 O 3 epitaxial layers were grown on a 4H-SiC substrate via MOCVD. A (004) XRC FWHM of the layer as small 0.09° (341 arcsec) is achieved.
Abstract A suitable semiconductor surface treatment could improve the gate dielectric quality and reduce interface states traps to enhance performance of metal–oxide capacitors (MOSCAPs). In this paper, β -Ga 2 O 3 using NaOH solution prior atomic layer deposition Al was investigated. comparison with piranha pretreatment, MOSCAPs pretreatment show a larger maximum accumulation capacitance less frequency dispersion, reduced charges/traps state density D it . The improvement in be attributed...
Abstract In this work, the effects of O 2 or N microwave plasma treatment on β -Ga 3 surface prior to Schottky metal deposition are reported. The device uniformity barrier diodes is improved significantly by treatments without any degradation such as ideality factor (near 1.0), and on-state resistance ( R ∼3 mΩ cm ). standard deviation height (SBH, φ B ) small less than 10 m eV. Kelvin probe force microscope analysis shows that electrostatic potential after lower treatment, which consistent...
Abstract The memristor-based neural crossbar is considered a promising device for research on neuromorphic computing. Moreover, memcapacitors can address the limitations caused by resistive nature of memristors. A with coexisting memristive and memcapacitive effects provide rich features computing systems. In this study, Pt/NiO x /NiO/Pt structure was developed; it demonstrates analog effects. metallic NiO serves as oxygen storage layer part top electrode. Analog are asynchronous; resistance...
The research on strain in epitaxial thin films has attracted lots of attention since semiconductors may significantly affect the quality materials and performance devices. In this work, we focus ε-Ga2O3 grown by metal-organic chemical vapor deposition (MOCVD) c-plane sapphire substrates. Combining X-ray Diffraction wafer bowing measurements, it is confirmed that all epi-films exhibit tensile stress ~1 GPa level. Vicinal surface epitaxy (VSE) adopted order to relax films. As substrate miscut...