Gang Wang

ORCID: 0009-0003-4964-785X
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About
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Research Areas
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides
  • Gas Sensing Nanomaterials and Sensors
  • Acoustic Wave Resonator Technologies
  • Semiconductor materials and devices
  • Perovskite Materials and Applications
  • Advanced biosensing and bioanalysis techniques
  • EFL/ESL Teaching and Learning
  • Philippine History and Culture
  • Ferroelectric and Piezoelectric Materials
  • Radio Frequency Integrated Circuit Design
  • Microwave Dielectric Ceramics Synthesis
  • AI in cancer detection
  • Climate variability and models
  • Breast Lesions and Carcinomas
  • 3D IC and TSV technologies
  • Radiomics and Machine Learning in Medical Imaging
  • Translation Studies and Practices
  • TiO2 Photocatalysis and Solar Cells
  • Tropical and Extratropical Cyclones Research
  • Meteorological Phenomena and Simulations
  • VLSI and Analog Circuit Testing

Air Force Medical University
2025

Xijing Hospital
2025

Anhui University
2025

Lanzhou University
2022-2024

Sun Yat-sen University
2012-2024

Solar Energy Research Institute of Sun Yat-sen University
2022-2024

Guizhou Normal University
2024

Wenzhou Medical University
2024

State Key Laboratory of Optoelectronic Materials and Technology
2023

High performance NiO/β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> heterojunction pn diodes were realized by applying a sputtered p-type NiO film onto lightly doped n-type β-Ga epitaxial layer. Taking advantage of the high barrier height against carriers within heterojunction, demonstrated device exhibited breakdown voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">B</sub> )...

10.1109/led.2020.2967418 article EN IEEE Electron Device Letters 2020-01-17

Abstract Beta gallium oxide ( β -Ga 2 O 3 ) has attracted significant attention for applications in power electronics due to its ultra-wide bandgap of ~ 4.8 eV and the large critical electric field 8 MV/cm. These properties yield a high Baliga’s figures merit (BFOM) more than 3000. Though possesses superior material properties, lack p-type doping is main obstacle that hinders development -based devices commercial use. Constructing heterojunctions by employing other materials been proven be...

10.1088/1674-4926/44/6/061802 article EN Journal of Semiconductors 2023-06-01

Abstract The explosion of mobile data from the internet things (IoT) is leading to emergence 5G technology with dramatic frequency band expansion and efficient allocations. Along this, demand for high‐performance filters radio (RF) front‐ends keeps growing. most popular are constructed by piezoelectric resonators based on AlN semiconductor. However, possesses a constant d 33 lower than 5 pm V −1 it becomes necessary develop novel semiconductors larger constant. In this work, shown that...

10.1002/advs.202203927 article EN cc-by Advanced Science 2022-09-25

This work presents the optimization of a NiO/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 heterojunction diode (HJD) by adjusting structural parameters NiO layer. A rapid thermal annealing (RTA) process was utilized to modulate hole concentration sputtered NiO. The influence layer geometry and its on HJDs' electrical properties has been thoroughly...

10.1109/ted.2022.3200642 article EN IEEE Transactions on Electron Devices 2022-08-31

Multifunctional and smart solar-blind photodetectors are of great significance for many applications, particularly communications, optoelectronic circuits, environmental risk monitoring. In this study, a wire-shaped photoanode the photoelectrochemical (PEC)-type photodetector based on an α-Ga2O3 nanorods/electrolyte solid/liquid heterojunction is realized. photovoltaic devices, junction generally comprises two different solid materials to facilitate separation photogenerated electron–hole...

10.1063/5.0134093 article EN Applied Physics Letters 2023-02-13

This work presents the fabrication and characterization of a high-performance vertical Nickel oxide (NiO)/Beta gallium ( β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) heterojunction p-n diode. The was fabricated by sputtering p-NiO thin film onto an epitaxial n <sup xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> - drift layer. sputtered NiO, revealed to be polycrystalline,...

10.1109/ted.2021.3091548 article EN IEEE Transactions on Electron Devices 2021-07-01

Abstract Low‐energy X‐ray detectors are widely used in diverse areas, including medical diagnosis, space exploration, environmental monitoring, industrial inspection, and scientific research. Developing large area, highly sensitive, fast low‐energy is challenging owing to material device operation mechanism limitation. Herein, an epitaxial ε‐Ga 2 O 3 thin film over a area (2 in.) prepared by metal–organic chemical vapor deposition applied the efficient detectors. The sensitive detecting...

10.1002/admt.202001094 article EN Advanced Materials Technologies 2021-02-25

The multifunctional and smart ultraviolet photodetectors are of great significance necessity for applications in many fields, especially health environmental risk monitoring. Hence, a wire-shaped photoelectrochemical type photodetector based on photoanode TiO2 nanotube arrays (TNAs) fabricated by electrochemical anodization is demonstrated this work. TNAs can provide direct pathways carriers large internal surface area. assembled UV detector presented high photocurrent density 110 μA cm−2,...

10.1063/5.0102834 article EN Applied Physics Letters 2022-09-12

This letter reports the demonstration of surface acoustic wave (SAW) resonators based on a novel <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\varepsilon $ </tex-math></inline-formula> -Ga2O3 piezoelectric semiconductor. A 1- notation="LaTeX">$\mu \text{m}$ thick phase-pure film was heteroepitaxially grown sapphire by metal organic chemical vapor deposition (MOCVD) and fabricated into single-port SAW...

10.1109/led.2023.3269040 article EN IEEE Electron Device Letters 2023-04-21

Applications of omnidirectional ultraviolet (UV) detectors are numerous and promising. There is an increasing demand for flexible UV toward the realization intelligent weavable systems. Carbon fibers (CFs) used in due to their linear structure unique flexibility. In this work, a photoanode photoelectrochemical (PEC)-type photodetectors (PDs) based on wurtzite hexagonal-phase ZnO nanowires grown CFs developed. The PD ZnO@CFs has good response rotation angles range from 0° 360°. After being...

10.1063/5.0158841 article EN Applied Physics Letters 2023-07-17

There are several prospective applications for omnidirectional ultraviolet (UV) detectors and underwater detection in optical systems fields. In this work, ZnO nanorods arrays were grown on carbon fibers (CFs). An appropriate amount of Ag nanoparticles (NPs) was deposited the surface by photochemical deposition. This improved performance photoelectrochemical (PEC) based UV detectors. Under 365 nm 10 mW cm

10.1088/1361-6528/ad4711 article EN Nanotechnology 2024-05-03

This letter reports on the suppression of reverse leakage current (Ir) in β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diodes (SBDs) through modification by a low power CF xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> -plasma treatment prior to metal deposition. Revealed an X-ray photoelectron spectroscopy (XPS) analysis, fluorine-plasma brought...

10.1109/led.2020.3013918 article EN IEEE Electron Device Letters 2020-08-03

Dilute magnetic semiconductors (DMSs) have attracted widespread interest due to their potential applications in data storage and spintronics. However, there is no relevant report on the ferromagnetism of κ-Ga2O3, which crucial for spintronics research wide-gap semiconductor Ga2O3. In this report, κ-Ga2O3 with N doping was investigated based density functional theory. as a deep acceptor exhibits low defect formation energy κ-Ga2O3. The p–p state interaction between O atoms results...

10.1021/acs.jpcc.4c00652 article EN The Journal of Physical Chemistry C 2024-04-26
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