A5100753897- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Graphene research and applications
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Carbon Nanotubes in Composites
- Quantum Dots Synthesis And Properties
- Crystallography and molecular interactions
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
- Advanced Memory and Neural Computing
- Molecular Junctions and Nanostructures
- Diamond and Carbon-based Materials Research
- Chalcogenide Semiconductor Thin Films
- Physics of Superconductivity and Magnetism
- Photonic and Optical Devices
- Luminescence and Fluorescent Materials
- Advanced Cellulose Research Studies
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advanced Sensor and Energy Harvesting Materials
- Metal-Organic Frameworks: Synthesis and Applications
Shijiazhuang University
2024-2025
PLA Army Service Academy
2020-2025
University of North Texas
2023-2025
Collaborative Innovation Center of Advanced Microstructures
2025
Nanjing University
2025
Southeast University
2020-2024
PLA Army Engineering University
2024
Tianjin University
2009-2024
National University of Defense Technology
2024
Zhengzhou University
2024
We report a general approach for three-dimensional (3D) multifunctional electronics based on the layer-by-layer assembly of nanowire (NW) building blocks. Using germanium/silicon (Ge/Si) core/shell NWs as representative example, ten vertically stacked layers multi-NW field-effect transistors (FETs) were fabricated. Transport measurements demonstrate that Ge/Si NW FETs have reproducible high-performance device characteristics within given layer, FET are not affected by sequential stacking,...
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The were prepared by sequential shell growth immediately following elongation using metal−organic chemical vapor deposition (MOCVD). Transmission microscopy (TEM) studies reveal that are dislocation-free single crystals. In addition, thicknesses compositions individual AlN AlGaN shells unambiguously identified cross-sectional...
The choice of support and catalyst materials has been proved to be critical scalable chemical vapor deposition (CVD) synthesis carbon nanotubes. In our study, we found that porous MgO prepared by thermal decomposition its salts was an eminent material for CVD growth single-walled nanotubes (SWNTs). Compared with other kinds supports such as SiO2, ZrO2, Al2O3 CaO etc., the quality as-grown SWNTs on stable; effects reaction conditions furnace temperature, flow rate gas types catalysts...
Ge/Si core/shell nanowires (NWs) are attractive and flexible building blocks for nanoelectronics ranging from field-effect transistors (FETs) to low-temperature quantum devices. Here we report the first studies of size-dependent performance limits NWFETs in sub-100 nm channel length regime. Metallic nanoscale electrical contacts were made used define channels by controlled solid-state conversion NWs NiSixGe y alloys. Electrical transport measurements modeling demonstrate that metallic...
Significance Fundamental limits soon may end the decades-long trend in microelectronic computer circuit miniaturization that has led to much technological and economic progress. Nanoelectronic circuits using new materials, devices, and/or fabrication methods face formidable challenges provide alternatives for future microelectronics. A key advance toward overcoming these hurdles is achieved this work through construction of a nanoelectronic finite-state machine (nanoFSM) “bottom–up” methods....
Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds been used as seeds chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality with color centers requires varying that often leads ad-hoc time-consuming, one-at-a-time testing of reaction conditions. In order rapidly explore parameter space, we developed a microwave plasma CVD technique using vertical, rather...
Abstract The observation of replica bands in single-unit-cell FeSe on SrTiO 3 (STO)(001) by angle-resolved photoemission spectroscopy (ARPES) has led to the conjecture that coupling between electrons and STO phonons are responsible for enhancement T c over other FeSe-based superconductors. However recent a similar superconducting gap FeSe/STO(110) raised question whether mechanism applies. Here we report ARPES study electronic structure FeSe/STO(110). Similar results FeSe/STO(001), clear...
Barocaloric effects─solid-state thermal changes induced by the application and removal of hydrostatic pressure─offer potential for energy-efficient heating cooling without relying on volatile refrigerants. Here, we report that dialkylammonium halides─organic salts featuring bilayers alkyl chains templated through hydrogen bonds to halide anions─display large, reversible, tunable barocaloric effects near ambient temperature. The conformational flexibility soft nature weakly confined...
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using fast pulsed-gate method dispersive readout. An inhomogeneous time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding measurements III-V semiconductors by more than an order magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential time, indicating the presence broadband noise source, rather Gaussian, previously seen systems with...
The distribution of Coulomb blockade peak heights as a function magnetic field is investigated experimentally in Ge/Si nanowire quantum dot. Strong spin-orbit coupling this hole-gas system leads to antilocalization peaks, consistent with theory. In particular, the height has its maximum away from zero at field, an average that decreases increasing field. Magnetoconductance open-wire regime places bound on length (${l}_{\mathrm{so}}<20\text{ }\text{ }\mathrm{nm}$), values extracted...
Bearings are widely used in many machines and equipment often fail when they for long periods under different conditions of varying frequencies loads. As a result, the detection defects bearings various working states is crucial. However, conventional neural networks associated with severe feature extraction problems relatively low rates due to data loss pooling layers. This study uses capsule overcome above - mentioned limitations bearing fault diagnosis. paper also solves problem...