A5015269967- Advanced MEMS and NEMS Technologies
- Acoustic Wave Resonator Technologies
- Ferroelectric and Piezoelectric Materials
- Nanowire Synthesis and Applications
- Mechanical and Optical Resonators
- Metal and Thin Film Mechanics
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Semiconductor materials and devices
- Multiferroics and related materials
- Advanced Surface Polishing Techniques
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Dielectric properties of ceramics
- Advanced Fiber Optic Sensors
- Advanced Sensor and Energy Harvesting Materials
- Photonic and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Magnetic Properties and Synthesis of Ferrites
- Electronic and Structural Properties of Oxides
- Force Microscopy Techniques and Applications
- Silicon and Solar Cell Technologies
- Magnetic properties of thin films
- Analytical Chemistry and Sensors
- Magneto-Optical Properties and Applications
Solid State Physics Laboratory
2015-2024
University of Delhi
2021
Defence Research and Development Organisation
2015
Westinghouse Electric (Japan)
1986
Incorporating nano- and microelectromechanical systems (NEMS/MEMS)-based sensors in clothing developing more compact flexible devices have gained popularity recently. NEMS/MEMS-based bolometers/sensors significance due to their high sensitivity accuracy measuring physical parameters such as temperature, humidity, pressure, infrared (IR) ultraviolet (UV) radiations. When worn on the body, bolometers can be employed various applications environmental monitoring or health tracking. This review...
Abstract In this paper, an ultra-wideband (UWB) terahertz Metamaterial Perfect Absorber (MPA) based on the phase change feature of vanadium dioxide (VO2) is proposed. The proposed absorber consists two square loops (VO2), silicon (SiO2) as dielectric substrate and a layer gold (Au) acting ground. Phase transition material VO2 changes conductivity (conductivity changed from 200 to 2×105 S/m, concerning temperature 300 K 341 K) by several orders magnitude at temperatures above 340 shifting...
In this study, the effect of ZnO buffer layer on electrical properties PbZrTiO3/BiFeO3 (PZT/BFO) multilayers has been reported. For this, PZT/BFO were spin-coated with and without platinized silicon wafers. X-ray diffraction results both films showed polycrystalline phase pure perovskite structure. Both show a dense homogeneous grain The electric measured. buffered multilayer thin film ∼3 times improvement in remnant polarization compared to no buffer. samples found have higher dielectric...
Molybdenum-di-sulfide (MoS2) is being considered as an alternative 2-D material to graphene. Deposition of ultrathin MoS2 layer from bulk sample important criterion in determining the viability its application. This paper discusses about growth and characterization pellet powder exfoliation it. The pellets were sintered at different temperatures (500 - 850 ° nitrogen atmosphere. samples found be polycrystalline nature with hexagonal flakes 100 nm – 1.0 µm sizes. In addition phase, surface...
Ultrathin (<50 nm) zirconium oxide (ZrO2) films are being intensively studied as high-k dielectrics for future metal-oxide-semiconductor (MOS) technology. In this paper, ultrathin ZrO2 deposited on silicon substrates by spin deposition technique and annealed at 700 °C different duration. The phase formation morphological study have been performed x-ray diffraction scanning electron microscopy, respectively. Electrical properties of the investigated. threshold voltages MOS structure...
In this work, the tunable resistive switching (RS) functionality of a Cu/MoS2/AlN/ITO nanostructured device is systematically investigated in dark and white light illumination. The exhibits bi-state RS behavior ambient, whereas illumination induces an extra intermediate resistance state provides controllable tri-state characteristics. A conceptual model proposed discussed to elucidate origin two states multiple device. Under ambient condition, high low could be ascribed formation/rupture Cu...
Ultrathin (<50 nm) titanium dioxide (TiO2) films are being widely investigated as high-k dielectrics for future metal oxide semiconductor (MOS) technology. In this paper, ultrathin TiO2 (∼20 were deposited on silicon substrates by sputtering technique and subsequently annealed at 800 °C in oxygen environment different durations (15–60 min). The polycrystalline nature with rutile phase. value of dielectric constant was found to be 32–60 1 kHz measurement frequency. Threshold voltages...