A5002526053- Electron and X-Ray Spectroscopy Techniques
- Photocathodes and Microchannel Plates
- X-ray Spectroscopy and Fluorescence Analysis
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Nuclear Physics and Applications
- GaN-based semiconductor devices and materials
- Advancements in Photolithography Techniques
- Ga2O3 and related materials
- Ion-surface interactions and analysis
- Electronic and Structural Properties of Oxides
- Surface and Thin Film Phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic confinement fusion research
- Aquatic Ecosystems and Phytoplankton Dynamics
- Ionosphere and magnetosphere dynamics
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Non-Destructive Testing Techniques
- Laser-induced spectroscopy and plasma
- Superconducting Materials and Applications
- Marine and coastal ecosystems
- Terahertz technology and applications
- MXene and MAX Phase Materials
- Nuclear Materials and Properties
Nanjing University of Information Science and Technology
2015-2025
Southern Medical University
2024-2025
Nanjing Institute of Geography and Limnology
2025
Huazhong University of Science and Technology
2024
Qorvo (United States)
2016-2021
IAP Research (United States)
2020
Kwangwoon University
2016
Nanjing University
2009
Xi'an Peihua University
2007
Chinese Academy of Sciences
2001
This work presents a new device concept, the Multi-Channel Monolithic-Cascode high-electron-mobility transistor (MC <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -HEMT), which monolithically integrates low-voltage, enhancement-mode (E-mode) HEMT based on single 2DEG channel and high-voltage, depletion-mode (D-mode) stacked multi-channel. can exploit low sheet resistance of multi-channel, realize an E-mode gate control, completely...
Abstract Secondary electron emission SEE model for 0.1-10 keV X-Ray induced photoelectric PE from semiconductors and insulators SI was developed here. From the here, theories of thermal characteristics PE, methods obtaining BPE, mean escape depth true secondary electrons λPE ɛPE were presented, respectively; BPE denotes probability that an internal electron, which is excited by X-Ray, escapes into vacuum upon reaching surface SI; average energy required to produce a in X-Ray. Based on...
This work demonstrates multi-kilovolt AlGaN/GaN Schottky barrier diodes (SBDs) on a 4-inch, five-channel, low-cost GaN-on-sapphire wafer. Our device highlights new 3-D anode architecture, in which the p-n junction wraps around multi-2DEG-channel fins. junction-fin structure differs from all existing tri-anode and tri-gate structures, employ or metal-insulator-semiconductor (MIS) stack at fin sidewalls. is realized with regrown p-GaN top of p-type NiO <inf...
The structure of the operation region has been studied in HT-7 superconducting tokamak, and progress on extension ohmic discharge is reported. A density corresponding to 1.2 times Greenwald limit was achieved by RF boronization. appears be connected impurity content edge parameters, so best results are obtained with very clean plasmas peaked electron profiles. peaking factors profiles for different current line averaged densities were observed. behaviour fuelling efficiency gas puffing...
Recent GaN related research efforts on both based transistors and passive devices like self-biased circulators will be discussed. Commercial mmW Applications are demanding for technology with more aggressive device scaling, starting from the gate length of 150 nm, towards 90 nm below. New epitaxy design is required to further reduce parasitic resistances below that can achieved traditional AlGaN/GaN structures. We have developed (GaN09) HEMT an AlN/GaN digital barrier. This new structure,...
Based on the main physical processes of secondary electron emission from metals, relation that product number released per primary at high incident energy and (n-1)th power is equal to constant C was deduced, where n exponent, based between yield. The yield D deduced. exponent in range 10 100 keV hitting gold aluminum are computed with ESTAR program experimental results scanning microscope (SEM), respectively, therefore, formulas for dependence were proved be true by SEM. discussed a...
Based on the main physical processes, we deduce relationships among incident energy Wp0 of primary electron, number released secondary electrons (i.e. δPEθ) per electron entering metal at angle θ and itself. In addition, relationship δPEθ = 0°, i.e. δPE0, with is determined. From experimental results, ratio β0 which average generated by a single backscattered surface to that metal, Moreover, βθ, are obtained. yield δθ), 0° δ0), backscattering coefficient 0 ηθ), η0), δPE0 universal formula...
On the basis of main physical processes secondary electron emission, relationships among incident energy ( W p0 ) primary electrons, number electrons (δ PEθ released per entering metal at high and angle θ (θ) are deduced. In addition, relationship between PE0 θ= 0° is determined. From experimental results, ratio β (the subscript means in this paper), (β 0 obtained. δ , backscattered coefficient η (η ), yield universal formula for expressing using The calculated from yields measured...
On the basis of free-electron model, energy range internal secondary electrons, band a metal, formula for inelastic mean escape depth, processes and characteristics electron emission, probability electrons reaching surface passing over barrier into vacuum B as function original work [Formula: see text] distance from Fermi to bottom conduction was deduced. According creation an excited electron, definition average required produce text], expressing using number valence atom V, atomic Z...
Based on a simple classical model that primary electrons at high electron energy interact with the of lattice by Coulomb force, we deduce secondary electrons. In addition, number in direction velocity per unit path length, n, is obtained. According to band insulator, definition probability B passing over surface barrier insulator into vacuum and assumption scattering ignored, expression related width forbidden (Eg) affinity χ. As whole, values calculated formula agree well experimental data....
Based on free-electron model, the calculated inelastic mean escape depth of secondary electrons, experimental one, energy band metal, characteristics and processes electron emission, maximum number electrons released per primary δ(Φ,E F ) PEm as a function parameter K m , work Φ Fermi E was deduced, where is constant for given metal in range 100–800 eV. According to relationship between yield from formula atomic Z, deduced. Using deduced relative alkali metals, earth-alkali metals value were...
Based on the formula for average energy required to produce an internal secondary electron (ε) in emitter, band of insulator and assumption that maximum exit is reverse width forbidden band, ε deduced. On basis number electrons produced direction velocity primary per unit path length, characteristic emission, probability passing over surface barrier into vacuum (B) also According some relationship between parameters yield from insulator, mean escape depth (1/α) successfully The formulae 1/α...
Based on expression of primary range R and the at Epo ≥ 10.0 keV L 1.0 calculated by ESTAR program [1], method obtaining formula for is presented; where incident energy electron, loss electron per unit path length surface materials. obtained R, experimental δ, relationships among parameters δ processes characteristics secondary emission SEE, universal deduced calculating insulators negative affinity NEA semiconductors presented experimentally proved, yield. The methods mean escape depth...
Based on the processes and characteristics of secondary electron emission formula for yield due to primary electrons hitting semiconductors insulators, universal maximum [Formula: see text] insulators was deduced, where is ratio number produced by electrons. On basis formulae range in different energy ranges text], deduced were incident at which yields from are maximized text]; total backscattered According relationship among high-energy back-scattering coefficient parameters experimental...