Bo Yang

ORCID: 0000-0001-7837-3454
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About
Contact & Profiles
Research Areas
  • Advanced Photonic Communication Systems
  • Photonic and Optical Devices
  • Optical Network Technologies
  • Advanced Fiber Laser Technologies
  • Advanced Fiber Optic Sensors
  • Semiconductor Lasers and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Sparse and Compressive Sensing Techniques
  • Optical Coatings and Gratings
  • Advanced Semiconductor Detectors and Materials
  • Photonic Crystals and Applications
  • Advanced Optical Network Technologies
  • Energy Load and Power Forecasting
  • Physics of Superconductivity and Magnetism
  • Blind Source Separation Techniques
  • Transportation Planning and Optimization
  • Random lasers and scattering media
  • Neural Networks and Reservoir Computing
  • Software System Performance and Reliability
  • Topological Materials and Phenomena
  • Quantum and electron transport phenomena
  • Advanced Optical Sensing Technologies
  • Service-Oriented Architecture and Web Services
  • Transportation and Mobility Innovations
  • Vehicular Ad Hoc Networks (VANETs)

Institute of Physics
2021-2025

Hangzhou Dianzi University
2014-2025

University of Chinese Academy of Sciences
2012-2025

Tarim University
2024-2025

Hainan University
2022-2025

SLAC National Accelerator Laboratory
2025

Hainan Agricultural School
2024

State Grid Corporation of China (China)
2023-2024

Sun Yat-sen University
2024

Western Digital (Japan)
2024

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic of III-V lasers silicon components on single wafer is recognized as a long-standing obstacle for ultra-dense integration, which can provide considerable economical, energy-efficient foundry-scalable on-chip light sources, that not been reported yet. Here, we demonstrate embedded...

10.1038/s41377-023-01128-z article EN cc-by Light Science & Applications 2023-04-03

The optoelectronic oscillator (OEO) has been widely investigated to generate ultra-pure single-frequency microwave signals. In this study, we propose and experimentally demonstrate an active mode-locking (AML-OEO), which can broadband frequency comb (MFC) An additional intensity modulator is inserted into the OEO as device for loss modulation realize phase-locking between adjacent oscillation modes. Through technique, steady multi-mode achieved, difficult in a conventional due...

10.1364/oe.406017 article EN cc-by Optics Express 2020-10-12

A harmonic active mode-locking optoelectronic oscillator (HAML-OEO) with pulse intensity feedback is proposed and experimentally demonstrated. It capable of generating microwave pulses characterized by suppressed supermode noise, uniform intensity, tunable repetition rates. Unlike traditional HAML-OEOs, are simultaneously achieved through the use a dual-drive Mach-Zehnder modulator (DDMZM). By synchronously feeding back generated to DDMZM, each undergoes loss proportional its facilitating...

10.1364/ol.514349 article EN Optics Letters 2024-02-06

10.1109/tmtt.2025.3543830 article EN IEEE Transactions on Microwave Theory and Techniques 2025-01-01

Small SU-8 ridge optical waveguides with an air cladding and a SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> buffer on Si substrate have been realized by using direct ultraviolet (UV) photolithography technology. The propagation loss measured the cut-back method is about 0.1 dB/mm (@1550 nm) when core width 2.8 ¿m. bending losses of present are also characterized. results show that decreases exponentially as radius increases total...

10.1109/jlt.2009.2022285 article EN Journal of Lightwave Technology 2009-05-11

As the capacity of next-generation passive optical network (PON) is reaching 100 Gb/s and beyond, cost-effective transceivers have been widely discussed. In this work, we provide a comprehensive comparison various simplified coherent direct detection (DD) schemes operating at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>100</mml:mn> <mml:mspace width="thickmathspace"/> <mml:mi mathvariant="normal">G</mml:mi>...

10.1364/jocn.390911 article EN Journal of Optical Communications and Networking 2020-05-12

For optical interconnect applications, multi-wavelength comb sources require uniform spacings and high reliability at operating temperature. Here, the high-temperature measurements of a InAs quantum dot colliding pulse mode-locked (QD-CPML) laser with 100 GHz spacing are systematically investigated. Laser lifetime performed for over 1600 hours 80 °C under constant stress current 150 mA. The mean time to failure (MTTF) is approximately 38 years (336,203 hours), extracted from threshold...

10.1364/oe.515398 article EN cc-by Optics Express 2024-02-13

The silicon thermo-optic switch (TOS) is one of the most fundamental and crucial blocks in large-scale photonic integrated circuits (PICs). An energy-efficient TOS with ultrahigh extinction ratio can effectively mitigate cross talk reduce power consumption optical systems. In this Letter, we demonstrate a based on cascading Mach–Zehnder interferometers (MZIs) spiral phase shifters. experimental results show that an 58.8 dB obtained, switching as low 2.32 mW/π without air trench. rise time...

10.1364/ol.520209 article EN Optics Letters 2024-04-12

Quantum dot distributed feedback lasers with high optical reflection tolerance are of great significance as the isolator-free light sources for hybrid-silicon photonic integrated circuit. In this work, we experimentally investigate our O-band quantum lateral coupled lasers, using a fiber-based back reflector. The spectra show that laser can maintain stable output power and wavelength under external up to -6 dB. Moreover, side-mode suppression ratio over 50 dB is also maintained without...

10.1117/12.3049425 article EN 2025-01-16

Low-saturation reservoirs have complex geological backgrounds, diverse genetic mechanisms, poor physical properties, variable pore structures, and low permeabilities. It also has a wide range of oil–water coexistences oil saturations, which make it difficult to accurately calculate their water production rate. To address these issues, this study investigates low-saturation in the Nanpu Sag, focusing on petrophysical characteristics relative permeability variations samples with different...

10.1080/10916466.2025.2450062 article EN Petroleum Science and Technology 2025-01-20

The utilization of deep learning and invertible networks for image hiding has been proven effective secure. These methods can conceal large amounts information while maintaining high quality security. However, existing often lack precision in selecting the hidden regions primarily rely on residual structures. They also fail to fully exploit low-level features, such as edges textures. issues lead reduced model generation results, a heightened risk network overfitting, diminished...

10.7717/peerj-cs.2668 article EN cc-by PeerJ Computer Science 2025-02-14

An optically tunable frequency-doubling optoelectronic oscillator (FD-OEO) based on stimulated Brillouin scattering (SBS) and carrier phase-shifted double sideband (CPS-DSB) modulation is proposed demonstrated. SBS effect provides narrowband filtering for the OEO to generate an oscillation signal with frequency equal shift, while a CPS-DSB by using dual-parallel Mach-Zehnder modulator implemented frequency. Owing wavelength-dependent tunability realized tuning wavelength of laser source. In...

10.1109/lpt.2012.2194483 article EN IEEE Photonics Technology Letters 2012-04-10

Compact 48 × and 23 arrayed waveguide grating (AWG) devices are realized by using SU-8 strip waveguides fabricated with the process of direct ultraviolet (UV) photolithography. The demonstrated 48-channel 23-channel AWG operating around 1550 nm have a channel spacing 0.8 (100 GHz) 3.2 (400 GHz), respectively. Due to high index-contrast waveguide, has very compact size only about 0.22 0.47 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/jlt.2011.2157302 article EN Journal of Lightwave Technology 2011-05-25

A wideband frequency-tunable optoelectronic oscillator (OEO) based on a narrowband phase-shifted fiber Bragg grating (PSFBG) and wavelength tuning of the laser is proposed demonstrated. With assistance an optical single-sideband modulator, PSFBG with narrow transmission peak acts like equivalent high-Q microwave filter to select oscillation frequency. Frequency tunability OEO can be simply realized by source. An X-band oscillating signal frequency tunable at wide range from 8.4 11.8 GHz...

10.1109/lpt.2011.2172789 article EN IEEE Photonics Technology Letters 2011-12-05

We experimentally investigate the symmetrical 50-Gb/sλ PAM-4 TDM-PON solutions in O-band to support PR-30 link loss budget, with using of DSP and SOA. The performances SOA setup are studied.

10.1364/ofc.2018.m1b.4 article EN Optical Fiber Communication Conference 2018-01-01

Phospholipids (PLs), as natural additives and nutritional supplements, are recovered from the gum phase during degumming process of crude vegetable oils. The molecular species phospholipids soybean (SO), flaxseed (FO) peanut oil (PO) by different processes, including water (WD), acid (AD), PLA1(EDA), PLC (EDC) PLA1-PLC (EDAC) were investigated. According to PLS-DA model, a total 30, 38 21 characteristic markers identified using UPLC-Q-TOF-MS in SO, FO PO respectively. PC (18:2/18:2) PE main...

10.1016/j.lwt.2023.115126 article EN cc-by-nc-nd LWT 2023-07-31

Abstract Direct epitaxial growth of III–V quantum dot (QD) lasers on Si (001) substrates is recognized as a promising and low-cost method for realizing high-performance on-chip light sources in silicon photonic integrated circuits (PICs). Recently, the CMOS-compatible patterned with sawtooth structures have been widely implemented to suppress lattice mismatch induced defects antiphase boundaries heteroepitaxial high-quality materials Si. Considerable progresses made 1300 nm InAs/GaAs QD...

10.1088/1361-6463/ac8431 article EN Journal of Physics D Applied Physics 2022-07-26
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