Aiming to increase the dielectric breakdown field strength (E bf ) of yttria films for application in semiconductor manufacturing, a synthetic strategy based on photo-assisted chemical solution deposition was developed prepare...

We report an up-to-4-fold enhancement in the in-magnetic-field critical current density at 77 K of epitaxial YBa2Cu3O7 films on CeO2-buffered SrTiO3 substrates by 3-MeV Au2+ irradiation. This indicates that irradiation using industrially practical ion beam, which generally has kinetic energy less than 5 MeV, can provide a substantial increase in-field performance high-temperature superconductor films. Transmission electron microscopy results show point-like defects smaller 6 nm diameter were created

Using a high-temperature superconductor, we constructed and tested model superconducting fault current limiter (SFCL). The superconductor the vacuum interrupter as commutation switch were connected in parallel using bypass coil. When flows this equipment, is quenched transferred to coil because of voltage drop superconductor. This large actuates magnetic repulsion mechanism interrupter. Due opening interrupter, broken. By flow time can be easily minimized. On other hand, also limited by reactance

Many alternative energy power generation systems create DC electricity. Also, many devices consume converted from AC. Therefore, it may be possible to reduce conversion losses and CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> emissions by adopting distribution. We assume that superconducting cables will used for dc distribution because their electrical resistance is almost zero. However, if a cable adopted, of great concern an...

The magnetic-field angle dependence of the critical current density Jc(H, θ) was measured in Y Ba2Cu3O7 − δ (YBCO) thin films with strong flux pinning (Jc ≥ 2.5 MA cm 2 at 77.3 K) prepared by a fluorine-free (FF) metal organic deposition (MOD) method and thermal co-evaporation. Steep Jc(θ) peaks around were observed FF-MOD films, anisotropic scaling analysis showed that is mainly due to small random (point) pins ab-plane-correlated pins. Few precipitates diameter less than 10 nm transmission...

Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain single phase (010)M-oriented films, in which subscript M refers monoclinic indices, heat treatment amorphous precursor VO2-stable region after pyrolysis coating solution. The product consisted discontinuous circular grains 1–2 µm size substrate surface. Therefore, we epitaxial using postepitaxial topotaxy (PET), that is, topotactic oxidation...

The authors constructed and tested a model superconducting fault current limiter (SFCL) using high-temperature film according to design that includes vacuum interrupter with an electromagnetic repulsion mechanism. superconductor the are connected in parallel bypass coil. If occurs flows through system, is quenched transferred coil because of voltage drop superconductor. This large actuates magnetic mechanism interrupter. On opening interrupter, interrupted. expected exhibit very low-energy...

La 0.7 Ca 0.3 MnO 3 (LCMO) thin films have been prepared on LaAlO3 and SrTiO3 (STO) (001) single-crystal substrates by the metal-organic deposition process. These were characterized transmission electron microscopy (TEM) temperature dependence of resistance R(T). The microstructure LCMO LCMO/substrate interfaces investigated through cross-sectional TEM observations. High-resolution (HRTEM) observations electron-diffraction patterns demonstrate epitaxial growth both LAO STO substrates. local...

An up-to-11-fold enhancement was observed in the in-magnetic-field critical current density (Jc) epitaxial YBa2Cu3O7 films on CeO2-buffered SrTiO3 substrates by irradiation with 200- to 750-keV Si and 200-keV B ions. This indicates that ion beams range of 100 1000 keV, which are widely used for modifying conductive properties semiconducting materials, can significantly improve vortex-pinning second-generation superconducting wires. Also a scaling relation between Jc vacancies (i.e., Frenkel...

TiO 2 (rutile) films have been successfully prepared by the coating photolysis process using ArF excimer laser irradiation at room temperature. The choice of Ti-alkoxide type as starting material and effects atmosphere on product studied Fourier transformation infrared (FT-IR) X-ray diffraction (XRD). When Ti(O-i-C 3 H 7 ) 4 material, rutile were obtained in a dry N atmosphere, whereas amorphous air. Ti(OCH CH(C 5 )-n-C 9 even air atmosphere. Crystallization mechanism is also discussed.

Epitaxially grown Pb(Zr, Ti)O 3 (PZT, Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on Nb-doped SrTiO (100) substrates by dipping-pyrolysis process with metal naphthenates used as starting materials. The alignments of the investigated based X-ray diffraction (XRD) θ–2θ scans, β scans (pole figures), and asymmetric ω–2θ (reciprocal-space maps). Epitaxial smooth surfaces obtained heat treatment prefired at 600°–750° C; a film heat-treated 750° C showed strongest peak intensities in XRD scans....

The preparation of La0.8Sr0.2MnO3 (LSMO) films on a LaAlO3 (LAO) substrate has been investigated by an excimer-laser-assisted coating pyrolysis process (ELACPP) in the temperature range from 350 to 500°C. (00l) oriented LSMO were successfully obtained ArF laser irradiation at 100 mJ/cm2 400 prepared 500°C LAO found be epitaxially grown based X-ray diffraction (XRD) pole-figure measurements. dependence resistance film 400°C showed semiconducting behavior. On other hand, that metallic behavior...

Abstract Flexible transparent electrodes on flexible plastic sheets are in significant demand for use perovskite solar cells ( f -PSCs). However, the combination of broadband high optical transparency and low electrical resistivity required tandemization -PSCs sets a stringent requirement that based traditional Sn-doped In 2 O 3 (ITO) films, owing to free-carrier concentration needed reduce resistivity. Herein, we used excimer laser irradiation achieve Ce H codoped (ICO:H) film polyethylene...