High conversion efficiencies were achieved in low cost n–p heterojunction oxide solar cells with an Al-doped ZnO (AZO)/non-doped (ZO)/Cu2O structure. This achievement was made possible by the formation of n-ZO thin-film layer, prepared appropriate thickness damage deposition, on high quality Cu2O sheets produced thermal oxidization copper sheets: thin film optimal ranges from 30 to 50 nm. Photovoltaic characteristics such as open circuit voltage 0.69 V, a fill factor 0.55 and efficiency...

Aiming to increase the dielectric breakdown field strength (E bf ) of yttria films for application in semiconductor manufacturing, a synthetic strategy based on photo-assisted chemical solution deposition was developed prepare...

The effects of using radio-frequency (RF)-superimposed direct-current (DC) magnetron sputtering deposition on the structural, electrical, and optical properties aluminum-doped ZnO (AZO)-based highly transparent conducting oxide films have been examined. AZO were deposited heated non-alkaline glass substrates (200 °C) ZnO:Al2O3 (2 wt. % Al2O3) ceramic targets with total power varied from 150 to 300 W, at various RF DC ratios, by a mixed approach ratio 0.14 showed lowest resistivity 2.47 ×...

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) deposited on 10-nm-thick Ga-doped (GZO) exhibited a high Hall mobility (μ H) 50.1 cm2/Vs with carrier concentration (N) 2.55 × 1020 cm−3. Firstly, the GZO were prepared glass substrates by ion plating dc arc discharge, and AZO then direct current magnetron sputtering (DC-MS). The interface layers preferential c-axis orientation play critical role in producing texture...

Polycrystalline ${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ films, which are solid-phase crystallized (spc) from amorphous films doped with hydrogen (H) and transition metals (TMs), exhibit remarkably high mobilities $(100--160\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1})$; moreover, their specific resistance is equivalent to...

This paper describes the development of transparent conducting impurity-doped ZnO thin films that would be appropriate for applications as electrodes in thin-film solar cells. Transparent Al-, B- and Ga-doped (AZO, BZO GZO) were prepared a thickness range from 500 to 2000 nm on glass substrates at 200°C using various physical deposition methods: with vacuum arc plasma evaporation, AZO GZO different types magnetron sputtering depositions (MSDs) all pulsed laser (PLD). The suitability...

The use of a 10-nm-thick buffer layer enabled tailoring the characteristics, such as film deposition and structural electrical properties, magnetron-sputtered Al-doped ZnO (AZO) films containing unintentionally retained Ar atoms. AZO were deposited on glass substrates coated with via direct-current magnetron sputtering using gas, substrate temperature 200 °C, sintered targets an Al2O3 content 2.0 wt %. Ga-doped possessing texture specific well-defined orientation was very effective for...

Very thin aluminum-doped zinc oxide (AZO) films with a well-defined (0001) orientation and surface roughness of 0.357 nm were deposited on amorphous glass substrates at temperature 200 °C by radio frequency magnetron sputtering, which are promising, particularly in terms evolution, roughness, carrier transport, as buffer layers for the subsequent deposition highly (0001)-oriented AZO polycrystalline 490 thickness direct current (DC) sputtering. Sintered targets an Al2O3 content 2.0 wt. %...

Abstract Flexible transparent electrodes on flexible plastic sheets are in significant demand for use perovskite solar cells ( f -PSCs). However, the combination of broadband high optical transparency and low electrical resistivity required tandemization -PSCs sets a stringent requirement that based traditional Sn-doped In 2 O 3 (ITO) films, owing to free-carrier concentration needed reduce resistivity. Herein, we used excimer laser irradiation achieve Ce H codoped (ICO:H) film polyethylene...

The behavior of resistivity in transparent conducting Al-doped ZnO (AZO) and Ga-doped (GZO) thin films, prepared with the same thickness under deposition conditions by dc magnetron sputtering, was investigated for use oxidizing environments at high temperatures. These films thicknesses range from 100 to 3000 nm were on glass substrates a temperature 200 °C. increase GZO over long-term testing 85% relative humidity 85 °C lower than that AZO while, contrast, 90% 60 exhibited GZO....

We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering various power ratios. used sintered targets with an Al2O3 content 2.0 wt. %. analysis data obtained X-ray diffraction, Hall-effect, optical...

We investigated the effects of erosion zone magnetron sputtering (MS) targets on deposition rates magnetron-sputtered Al-doped ZnO (AZO) polycrystalline films and structural electrical properties resulting AZO films. deposited glass substrates at a substrate temperature 200 °C, which were placed parallel to target surface, by radio frequency (RF), direct current (DC) or RF-superimposed DC (RF/DC) MS. Sintered with an Al2O3 content 2.0 wt. % used. The X-ray diffraction Hall-effect...

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 °C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4–6 × 10−4 Ω cm obtained in BZO a B content [B/(B + Zn) atomic ratio] around 1 at. % PLD VAPE methods: Hall mobilities above 40 cm2/Vs carrier concentrations the order 1020 cm−3. All 500-nm-thick-BZO resistivity 10−3–10−4 exhibited an...