Felicia Iacomi

ORCID: 0000-0001-7952-3741
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About
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Research Areas
  • Gas Sensing Nanomaterials and Sensors
  • ZnO doping and properties
  • Electronic and Structural Properties of Oxides
  • Transition Metal Oxide Nanomaterials
  • Copper-based nanomaterials and applications
  • Quantum Dots Synthesis And Properties
  • Thin-Film Transistor Technologies
  • Advanced Photocatalysis Techniques
  • Chalcogenide Semiconductor Thin Films
  • TiO2 Photocatalysis and Solar Cells
  • Conducting polymers and applications
  • Perovskite Materials and Applications
  • Magnetic and transport properties of perovskites and related materials
  • Semiconductor materials and devices
  • Electrical and Thermal Properties of Materials
  • Laser-Ablation Synthesis of Nanoparticles
  • Semiconductor materials and interfaces
  • Nanoparticle-Based Drug Delivery
  • Silicone and Siloxane Chemistry
  • Characterization and Applications of Magnetic Nanoparticles
  • Iron oxide chemistry and applications
  • Advanced Semiconductor Detectors and Materials
  • Porphyrin and Phthalocyanine Chemistry
  • Thermal Radiation and Cooling Technologies
  • Polymer Nanocomposite Synthesis and Irradiation

Alexandru Ioan Cuza University
2013-2024

National Institute of Research and Development for Technical Physics
2007

Yahoo (United Kingdom)
2006

Undoped and Fe-doped TiO2 thin films were obtained by rf-sputtering technique onto heated glass substrates (250 °C) covered with indium tin oxide. The temperature dependence of the electrical conductivity was investigated in range 13–320 K, it shows that conduction mechanism studied samples is described small-polaron hopping (SPH) at temperatures higher than half Debye (θD). It found magnitude SPH coupling increases Fe doping films. With decreasing temperature, behavior transited from to...

10.1063/1.3493742 article EN Journal of Applied Physics 2010-10-15

Silicon (Si) nano-electronics is advancing towards the end of Moore's Law, as gate lengths just a few nanometers have been already reported in state-of-the-art transistors. In nanostructures that act channels transistors or depletion layers pn diodes, role dopants becomes critical, since transport properties depend on small number and/or their random distribution. Here, we present possibility single-charge tunneling codoped Si nanodevices formed silicon-on-insulator films, which both...

10.3390/nano13131911 article EN cc-by Nanomaterials 2023-06-22

10.1016/j.mseb.2004.12.083 article EN Materials Science and Engineering B 2005-02-08
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