Layered transition metal dichalcogenides (MoSe2, NbSe2) have been heteroepitaxially grown on (NH4)2 Sx (x≂2) treated GaAs(111)Ga, GaAs(∼(111))As surfaces in spite of the large difference their crystal structures. The situ observation reflection high-energy electron diffraction has shown that film its own lattice constant even from first layer. matching condition, which is severely restricting usual heteroepitaxial growth case, greatly relaxed present system because only weak van der Waals...

Chemical doping of graphene with foreign atoms is one the most promising ways to modify electronic structure graphene. We fabricated nitrogen (N)-doped on a Pt(111) surface through chemical vapor deposition method; heated substrate was exposed such N-containing organic molecules as pyridine and acrylonitrile. Analysis by X-ray photoelectron spectroscopy (XPS) Raman revealed that N-doped formed from at temperature (TS) higher than 500 °C, while not doped TS 700 °C. Exposing acrylonitrile also...

Nitrogen doping is expected to provide several intriguing properties graphene. plasma treatment defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causes of nitrogen atom into the graphene layer. atoms are initially doped at a graphitic site (inside graphene) for HOPG, while pyridinic or pyrrolic (edge dominant HOPG. The work function correlates strongly with amount nitrogen. lower function, increase function. Control time initial defect could change from 4.3 eV 5.4...

We present a simple but powerful method to determine the thicknesses of accumulation and depletion layers distribution curve injected carriers in organic field effect transistors. The conductivity semiconductors thin film transistors was measured in-situ continuously with bottom contact configuration, as function thickness at various gate voltages. Using this method, pentacene were determined be 0.9 nm (VG=-15 V) 5 (VG=15 V).

Surface properties of (NH 4 ) 2 S x -treated GaAs (100), (111)Ga and (1̄1̄1̄)As planes were studied by means Auger electron spectroscopy (AES), low-energy energy loss (LEELS) reflection high-energy diffraction (RHEED). We found that oxide-free sulfur-terminated surfaces produced the treatment provided reduction interface state density. Furthermore, comparison various revealed (i) sulfur atoms could combine with both Ga As (ii) bonding between was stronger than S.

C 60 film has been grown heteroepitaxially on a cleaved face of MoS 2 by means van der Waals epitaxy. The forms close-packed structure with its principal crystal axes parallel to those the substrate. Although lattice constant is much larger than that , good heteroepitaxial growth becomes possible because Waals-type interaction between and

Ultrathin films of vanadyl-phthalocyanine (VOPc) have been grown heteroepitaxially on cleaved (001) faces KBr and KCl by molecular beam epitaxy (MBE). Their structures were investigated in situ reflection high energy electron diffraction (RHEED). VOPc molecules form a single domain square lattice (3√2/2×3√2/2- R 45°) substrate, whereas two equivalent lattices (√5×√5- ±26.6°) substrate. The distances between neighboring found to be-about 14 Å both cases.

We used STM to observe visible light photo-oxidation reactions of formic acid on the ordered lattice-work structure a TiO(2)(001) surface for first time. The nanostructured makes band gap significantly smaller than 3.0 eV only at layer, and state crystal enables response.

Pentacene thin film transistors (TFTs) were fabricated by the organic molecular beam deposition method. The TFTs characterized in order to study effect of thermal annealing on morphology and carrier mobility transistors. For all TFT samples exhibited an Arrhenius relationship with temperature, indicating a thermally activated transport that could be explained trap release mechanism. Therefore, investigate effect, we tested data for significant period time after until temperature recovered...

We have investigated the film morphology and field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on SiO2 substrate with solution-processed graphene electrodes. The domain size density aggregates in C8-BTBT showed same dependence spinning speed. These competitive two factors (domain aggregates) give an optimum speed, at transistor a maximum (2.6 cm2/V s). This result indicates importance speed fabrication solution...

The conductivity of organic semiconductors is measured in situ and continuously with a bottom contact configuration, as function film thickness at various gate voltages. depletion layer can be directly determined shift the threshold which electric current began to flow. continuous measurement also determine qualitatively accumulation together distribution injected carriers. few monolayers it does not depend on Rather depends chemical species.

Atomic and electronic structures of a polar surface MgO formed on Ag(111) was investigated by using reflection high-energy electron-diffraction, Auger-electron spectroscopy, electron energy-loss spectroscopy (EELS), ultraviolet photoemission (UPS). A rather flat unreconstructed MgO(111) $1\ifmmode\times\else\texttimes\fi{}1$ could be grown alternate adsorption Mg ${\mathrm{O}}_{2}$ Ag(111). The stability the discussed in terms interaction between Ag atoms at interface charge state atoms....

The gate bias and temperature dependent field-effect mobility conductance of a polycrystalline pentacene thin film transistor (TFT) were analyzed to study the charge transport in material. Since both heating cooling can obviously change morphology, relatively narrow range was adopted rule out possible influence structure variation on device characterization. Both values increased with showed thermally activated Arrhenius-like behavior, while threshold voltage deceased temperature. Several...

In hard-disk-drive control, the perfect tracking control (PTC) method has already obtained high performance. Therefore, first author and his group study PTC scheme for improving performance of large-scale stages. This paper presents an application to two different The results from both simulations experiments show that outperforms conventional rigid-body-mode-based feedforward method.

Chemical vapour deposition (CVD) growth of graphene has attracted much attention, aiming at the mass production large-area and high-quality specimens. To optimize condition, CVD grown is conventionally characterized after synthesis. Real-time observation during enables us to understand mechanism control more easily. Here we report optical microscope in real time by focusing radiation emitted from growing graphene, which call 'radiation-mode microscopy'. We observe shrinkage response...

Graphene is a promising material for next-generation electronic devices. The effect of UV-irradiation on the graphene devices, however, has not been fully explored yet. Here we investigate UV-induced change field transistor (FET) characteristics graphene/SiO2. in vacuum gives rise to decrease carrier mobility and hysteresis transfer characteristics. Annealing at 160 °C eliminates hysteresis, recovers partially, moves charge neutrality point negative direction. Corresponding Raman spectra...

Growth of a III-VI compound semiconductor GaSe on GaAs(111)B substrate has been tried by the molecular beam epitaxy technique. Although and GaAs have completely different lattice structures, it found that good film having its own constant grows with c -axis normal to surface. The growth proceeds via van der Waals-like weak forces between each layer GaSe, relaxing lattice-matching condition drastically. heteroepitaxial will be applied effective surface passivation GaAs.

The nanographite grains, the diameter of which was around 5nm, were formed on Pt(111) by exposing substrate to benzene gas at room temperature and annealing it up 850K. increase relative number edge atoms enabled observation edge-derived electronic states. measurement ultraviolet photoelectron spectroscopy near x-ray absorption fine structure revealed appearance state located Fermi level.

Nitrogen doped graphene was synthesized from four kinds of nitrogen-containing aromatic compounds: quinoline, pyridine, pyrrole, and pyrimidine on Pt(111) at a variety temperatures.