Oxidation behavior of SAC305/Cu solder joints and kinetics intermetallic compound (IMC) growth were investigated using an electromagnetic induction heating device. The results show that the joint undergoes oxidation when subjected to rapid thermal shock. itself is main factor, which exacerbated by presence internal Cu6Sn5 IMC. layer controlled grain boundary diffusion, while Cu3Sn bulk diffusion. dissolved Cu substrate diffuses mainly into interfacial IMC interior solder. Under shock, shear...

The effects of Ag content on the microstructure and shear strength Sn−xAg−0.5Cu solder joints under rapid thermal shock were investigated using high-frequency induction heating equipment. results show that increased can make surface joint denser smoother reduce generation long strips Cu6Sn5 intermetallic compound (IMC) inside joint, thus enhancing oxidation resistance joint. accelerates growth rate IMC layer at interface, is determined by both bulk diffusion grain boundary diffusion, Cu3Sn...

Non-evaporable getter (NEG) thin films based on alloys of transition metals have been studied by various authors for vacuum control in wafer-level packages micro electro mechanical systems (MEMS). These materials typically a relatively high activation temperature (300–450 °C) which is incompatible with some sensitive MEMS devices. In this work we investigate the potential Au/Ti system or ultrathin non oxidizable Au layer as low material. bilayer system, gettering produced thermal...

Heteroepitaxial CoSi2 layers have been made by ion beam synthesis and solid phase epitaxy in Si〈111〉 substrates. Using the x-ray rocking curves of asymmetric (331) reflections we are able to determine very accurately relative amount aligned (type A) twinned B) samples with different thicknesses. It is shown that for epilayers thinner than 360 Å, type A decreases from 100% 30%.

A large set of micro-and nanodevices requires hybrid vacuum packaging at the wafer level to optimize their performance and lifetime.When temperature fabrication process is limited, getter films must be integrated into cavity obtain a low sustainable pressure.In this paper, gas generation residual gases inside wafer-level package, as well main alloy multilayers investigated previously, are reviewed.An emphasis put on effect gaseous environment physicochemical mechanisms involved in film...

Interdiffusion in gold/titanium films with titanium evaporated on silicon at different oblique angles (0°, 30°, 50°, and 70°) gold under normal incidence is investigated using a scanning electron microscope in-situ sheet resistance measurements for the optimization of films' effective gettering ability during after low-temperature thermal activation. Films have tilted columnar structure porosity increasing deposition angle agreement calculated values. The oxygen ability, characterized by...

AbstractAbstractGalvanised steels have been joined using an arc brazing process with Cu97Si3 as the filler metal. The arcing time ranged from 1 s to 5 current of 70 A in flowing argon. Excellent wetting between base materials and was observed for all samples. reaction products were confirmed by analysis possible at interface thermodynamics, SEM, EDS methods. From this, schematic cycle Fe/Si compound growth mechanisms fragmentation a whiskerlike intermetallic determined. It has also that...

In this work, we investigate Au/Zr/V/Zr multilayer getters in order to get a sustainable low pressure packaging cavity. These films were analyzed by using four probe resistivity measurements, SEM and TEM cross section observations Energy Dispersive X-Ray Spectrometry (EDX) measurements. It is demonstrated that the activation temperature of zirconium layer covered with vanadium depends on thickness. Other experiments demonstrate getter can be activated at suitable sorption properties medium...

In this work, we investigate Au/Zr/V/Zr multilayer getters in order to get a sustainable low pressure packaging cavity. These films were analyzed by using four probe resistivity measurements, SEM and TEM cross section observations Energy Dispersive X-Ray Spectrometry (EDX) measurements. It is demonstrated that the activation temperature of zirconium layer covered with vanadium depends on thickness. Other experiments demonstrate getter can be activated at suitable sorption properties medium...

In this work thermal diffusion of titanium through an ultrathin capping gold layer has been investigated as alternative way to produce a getter film activated at low temperature. Ti out-diffusion from Au/Ti thin films was studied using four probe resistivity measurements, XPS analysis, residual stress SEM cross section observation and Ion Beam Etching coupled with mass spectrometry. The results show that oxide is growing the out diffuses comes in contact traces oxidizing species N 2...

Heteroepitaxial CoxNi1−xSi2 layers with good crystalline quality (χmin=3.5%) have been formed by ion beam synthesis. For a sample x=0.66, we found that this ternary silicide layer contains 11% type B and 89% A orientation. The transmission electron microscopy investigation reveals the component is mainly located at interfaces thickness of only few monolayers. X-ray diffraction studies show strain smaller than probably reason for such unique distribution in epilayer. Rutherford...

A thermodynamic based constitutive model is presented, which focuses on depicting the changes in mechanical properties resulting from mutual influence of multiple physical fields. Instead treating field character-istic variables as “parameters” to adjust material coefficients, this paper represents fields by introducing concept intrinsic and establishing a constraint matrix Onsager reciprocal relationship.The exhibits following characteristics:1. boundary established restrict empirical...

High quality YSi1.7 layers (χmin of Y is 3.5%) have been formed by 60 keV ion implantation in Si (111) substrates to a dose 1.0×1017/cm2 at 450 °C using channeled beam synthesis (CIBS). It shows that, compared the conventional nonchanneled synthesis, CIBS beneficial forming with better due lower defect density created implanted layer. Rutherford backscattering/channeling and x-ray diffraction used study structure strain layers. The perpendicular parallel elastic strains epilayer are e⊥...

Single crystal of Si was implanted with 125mTe along (100) direction a dose 2×1015 atoms/cm2. The epitaxial regrowth studied by Mössbauer spectroscopy. symmetry around the Te atoms found to be lower than cubic after oven annealing.

AbstractAbstractMetal inert gas brazing for joining galvanised A3 steel sheets or 1Cr18Ni9Ti stainless with Cu- 3 wt-%Si- 1 wt-%Mn 10 wt-%Mn- 6 wt-%Ni filler metal has been investigated. The experiment results indicate a Si and Mn rich band was produced at the interface of base metal. X-ray diffraction analysis shows that existed as Fe2Si in form solid solution. Tensile testing specimens using Cu–3Si–1Mn Cu–10Mn–6Nias fractured joint strengths 308·2–308·7 MPa. seam 331·5 423·6 fracture area...

Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS other techniques. Results show that Au/Ti with an ultrathin is promising getter material for wafer-level vacuum packaging activation temperature ≤300°C.

Magneto-elastic cable tension sensor have a number of advantages, it will be ideal method to measure in large span cable-bridge, but the is sensitive temperature, so temperature influence not negligible sensor. In this paper, principle based on magnetic-elastic effect introduced, common compensation technique are detail analyzed. A novel by adjusting bias magnetic field put forward, theoretical analysis and experiment, indicated that feasible compensated influence.

Joining of copper tubes using Ag-Cu filler has been carried out by vacuum brazing technology. The microstructure and mechanical property brazed joints were studied means metallography, optical microscope (OM) universal tensile test machine. Experimental results show that failure occurs in the base metal strength can reach 179 MPa. optimal parameters are: temperature 820 °C, level 10 -3 Pa holding time 5 min.