13.5 mm × sintered nano-silver attachments for power devices onto AlN substrates were prepared at 250 °C and a pressure of 10 MPa 5 min compared with Pb5Sn solder joint die under constant current cycling an initial temperature swing 50 °C-175 °C. Both effective thermal resistance microstructural evolution the samples monitored using transient impedance measurement nondestructive X-ray computed tomography regular intervals. The results showed gradual increase in joints from 0.047 to 0.133 K/W...

Integration of decoupling capacitors into silicon carbide (SiC) metal oxide semiconductor field effect transistor ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> ) modules is an advanced solution to mitigate the parasitic inductance induced by module assembly interconnects. In this paper, switching transient behavior reported for a 1.2-kV SiC with embedded dc-link capacitors. It shows faster transition and less overshoot voltage...

As core components of power converters, the insulated gate bipolar transistor (IGBT) module is required to have long-term reliability in increasingly more applications. To assess and improve reliability, cycling (PC) tests are conducted determine lifetime IGBT modules; these very time-consuming may take a couple weeks or even months for single sample. Therefore, an urgent need industrial community develop accurate efficient method predict modules. In this article, we present prediction...

Abstract This paper deals with the performance of sintered nano-silver bonds used as wide-bandgap power module die attachment technology. The specifically explores fine-scale microstructures highly porous attachments under cycling to provide a deeper understanding significance porosity reliability-related microstructural parameter. Attachments prepared at 220°C using pressure 6 MPa for 1 s (parameters known generate approximately 50% from previous work) and subsequently subjected 650,000...

Summary A time‐lapse study of thermomechanical fatigue damage has been undertaken using three‐dimensional X‐ray computer tomography. Morphologies were extracted from tomography data and integrated with microscopy modalities at different resolution levels. This enables contextualization some the fine‐scale properties which underpin large‐scale observed via Lateral views crack development are presented, show networks analogous to mud‐cracks. Crack fronts develop in most porous regions within...

This paper proposes an advanced Si3N4 ceramic-based structure with through vias designed and filled brazing alloy as a reliable interconnect solution in planar power modules. Finite-element (FE) modeling simulation were first used to predict the potential of using proposed improve heat dissipation reliability interconnects. Power cycling tests nondestructive microstructural characterization then performed on structures, flexible printed circuit boards (PCBs), conventional Al wire samples...

This study investigates the power cycling reliability of nanosilver sintered joints formed by a time-reduced sintering process, designed for use on die bonder. A range parameters, reflecting different levels manufacturability, were used to produce in respect shear strength and porosity, within process cycle time few seconds. The attachments evaluated against Pb5Sn solder under constant temperature swing conditions over 50 200 °C. thermal performance microstructural changes monitored...

The power cycling reliability of flexible printed circuit board (PCB) interconnect smaller/thinner (ST) 9.5 mm × 5.5 0.07 and larger/thicker (LT) 13.5 0.5 single Si diode samples have been studied. With the assumption creep strain accumulation-induced fatigue cracking as failure mechanism Sn-3.5Ag solder joints, finite element (FE) simulations predicted a higher soldering PCB on ST than LT under similar conditions. Then test results 10 for each type are reported discussed. were constructed...

Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes a few hours have been widely reported. This article presents our work on time-efficient dry film and an automatic die pick place machine, resulting in process times just seconds. The combined parameters temperature 250°C, pressure 10 MPa, 5 s were selected as the benchmark 2 × 0.5-mm dummy Si devices. Then, effects either (240–300°C), (1–9 s), or (6–25 MPa) porosity shear...

This study quantifies the correlations between crack evolution and electrical performance degradation of Al metallization in insulated gate bipolar transistor (IGBT) modules. The resistance under different power cycling times was measured by four-point probe method. cracks that occur were investigated measuring geometric parameters, e.g., shape, size density. Simplified analytical models containing parameters established finite element method (FEM). influences on current density...

This work is concerned with the thermal performance and reliability of SiC power module direct-cooled stacked Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> substrates for high temperature applications. First, finite element thermo-mechanical simulations have been carried out on half bridge switch-like accommodating 4 diodes 20 A-3.3 kV. The simulation results can be used to...

The lead-free (LF) and halogen-free (HF) ldquogreenrdquo initiatives are driving the advanced packaging manufacturers to develop new generation materials assembly technologies. However, moisture related reliability issues become significant technical challenge meet stringent quality standards comparing previous Lead halogen technology. In this study, absorption desorption performance of free lead material were investigated. experimental data revealed that after fully baked process there was...

This study presents the development and performance of a half bride insulated-gate bipolar transistor planar power module integrated with turbulent water cooler for double side direct substrate cooling. A holistic approach which simultaneously overcomes mechanical, electrical thermal limitations as well inefficient manufacturing conventional modules has been employed. Work includes design consideration in terms packaging structure, materials bonding technologies; three-dimensional finite...

This work investigates printed circuit board embedding of the power devices in order to support low inductance, fast switching package designs. The process is discussed and a half bridge designed around 500V supply voltage 40A operating current using bare gallium nitride dies. Parasitic extraction from computer aided design model predicted commutation loop inductance 1.95nH. was manufactured but initial result found not function electrically. Misalignment between two its component parts...

Abstract: Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes a few hours have been widely reported. This paper presents our work on time-efficient sintering, dry film and an automatic die pick place machine, resulting in process times just seconds. The combined parameters temperature 250 °C, pressure 10 MPa 5 s were selected as the benchmark 2 mm × 0.5 dummy Si devices. Then effects either (240 300 °C), (1 9 s) or (6 25 MPa)...

Abstract Wide band-gap (WBG) semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher frequencies, which in principle allows a reduction passive component values converter applications. However, efficient frequencies requires increased voltage and current transition rates. With conventional packaging circuit construction, parasitic inductance capacitance can deteriorate performance, reducing efficiency adding the...