Yanwei Dai

ORCID: 0000-0002-2636-772X
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About
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Research Areas
  • Fatigue and fracture mechanics
  • Electronic Packaging and Soldering Technologies
  • Numerical methods in engineering
  • Aluminum Alloys Composites Properties
  • High Temperature Alloys and Creep
  • Silicon Carbide Semiconductor Technologies
  • 3D IC and TSV technologies
  • Powder Metallurgy Techniques and Materials
  • Advanced Surface Polishing Techniques
  • Mechanical Behavior of Composites
  • Advanced Welding Techniques Analysis
  • Silicon and Solar Cell Technologies
  • Mechanical stress and fatigue analysis
  • Metal Forming Simulation Techniques
  • Fire effects on concrete materials
  • Metal and Thin Film Mechanics
  • Heat Transfer and Optimization
  • Non-Destructive Testing Techniques
  • Injection Molding Process and Properties
  • Thin-Film Transistor Technologies
  • Material Properties and Failure Mechanisms
  • Electrostatic Discharge in Electronics
  • Advanced materials and composites
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced machining processes and optimization

Beijing University of Technology
2018-2024

Institute of Electronics
2019-2024

Zhejiang University
2023

Beijing Municipal Ecological and Environmental Monitoring Center
2023

Institute of Advanced Manufacturing Technology
2020

Tsinghua University
1988-2018

Academia Sinica
1988

Abstract It is argued that there are a set of orthonormal basis states, which appear as highly degenerate ground states arising from spontaneous symmetry breaking with type-B Goldstone mode, and they scale-invariant, salient feature the entanglement entropy S (n) scales logarithmically block size n in thermodynamic limit. As it turns out, prefactor half number modes NB. This achieved by performing an exact Schmidt decomposition thus unveiling their self-similarities real space - essence...

10.1088/1751-8121/adaba0 article EN Journal of Physics A Mathematical and Theoretical 2025-01-17

Due to the demand for high reliability and thermal conductivity of high-power modules operating at temperatures, sintered nano-silver (Ag) has garnered significant attention as an excellent interconnect heat transfer layer, particularly its other research. Since mechanical behavior conduction capacity Ag is generally regulated by changes in temperature, microstructure will change accordingly, affecting performance. In this study, a machine learning model was used evaluate predict Ag,...

10.36922/ijamd.5744 article EN cc-by Deleted Journal 2025-02-06

As core components of power converters, the insulated gate bipolar transistor (IGBT) module is required to have long-term reliability in increasingly more applications. To assess and improve reliability, cycling (PC) tests are conducted determine lifetime IGBT modules; these very time-consuming may take a couple weeks or even months for single sample. Therefore, an urgent need industrial community develop accurate efficient method predict modules. In this article, we present prediction...

10.1109/jestpe.2020.2992311 article EN IEEE Journal of Emerging and Selected Topics in Power Electronics 2020-05-04

The study presented in this paper contributes to the quantification of correlations between resistance degradation and Al metallization layer reconstruction observed high-power insulated gate bipolar transistor (IGBT) modules during power cycling. microstructure evolution that occurs cycling was investigated via electron ion microscopy, surface roughness measured used characterize degradation. An electrical four-point probe method examine change parameter (resistance) IGBT modules. effect on...

10.1109/tpel.2019.2895695 article EN IEEE Transactions on Power Electronics 2019-01-29

Under the operating conditions of high power and switching frequency, an insulated gate bipolar transistor (IGBT) chip can produce relatively large loss, causing junction temperature to rise rapidly; consequently, reliability IGBT module be seriously affected. Therefore, it is necessary accurately predict chip. The resistance capacitance (RC) thermal network model a commonly used method for prediction. In this paper, parameters are obtained by two methods establish Cauer models module. first...

10.3390/electronics12071650 article EN Electronics 2023-03-31

In this article, the correlation between thermal contact resistance and surface roughness characteristics of interface in press-pack insulated-gate bipolar transistor (PP-IGBT) modules during power cycling was studied by experimental measurements finite-element (FE) simulation-based factorial design analysis. Thermal transient test technology applied to examine change characteristic parameters PP-IGBT module. This shows that increase Al metallization/emitter Mo occurs more dramatically...

10.1109/tpel.2021.3134175 article EN IEEE Transactions on Power Electronics 2021-12-13

Abstract Bondline thickness effect on fracture behaviors and cohesive zone model (CZM) is an important topic for adhesive joints. In this paper, the CZM of sintered nano silver joints are investigated based end notched flexure (ENF) test. Results show that load versus displacement curves sensitive to bondline thickness. With compliance‐based beam method (CBBM), shearing toughness bonded heightens with increase thickness, which indicates highly dependent R steeply short equivalent crack...

10.1111/ffe.13981 article EN Fatigue & Fracture of Engineering Materials & Structures 2023-03-05

Abstract The die shear test is a feasible and conventional method to characterize the strength of die‐attaching layer materials in electronic packaging. A new for determining cohesive zone model (CZM) parameters using deep neural networks (DNN) tests proposed, different from classical fracture framework or lap test‐based methods. With sintered nano‐silver test, results show that bilinear CZM inversion agree well with experimental results. It found DNN has high accuracy predicting identifying...

10.1111/ffe.14220 article EN Fatigue & Fracture of Engineering Materials & Structures 2023-12-19
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