A5083393096- 2D Materials and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Electrostatic Discharge in Electronics
- Graphene research and applications
- Metallic Glasses and Amorphous Alloys
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Gas Sensing Nanomaterials and Sensors
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Acoustic Wave Resonator Technologies
- Silicon and Solar Cell Technologies
- Chalcogenide Semiconductor Thin Films
- Graph theory and applications
- Phase-change materials and chalcogenides
- Analog and Mixed-Signal Circuit Design
- CCD and CMOS Imaging Sensors
Jiangnan University
2016-2025
Technology Applications (United States)
2020-2025
Chinese Academy of Agricultural Sciences
2023-2024
Biotechnology Research Institute
2023-2024
Brookhaven National Laboratory
2022-2024
Ningxia University
2024
Integrated Chinese Medicine (China)
2024
Suzhou Traditional Chinese Medicine Hospital
2024
South China University of Technology
2024
Energy Research Institute
2024
Epitaxial growth of atomically thin two-dimensional crystals such as transition metal dichalcogenides remains challenging, especially for producing large-size bilayer featuring high density states, carrier mobility and stability at room temperature. Here we achieve in epitaxial the second monolayer from first by reverse-flow chemical vapor epitaxy produce high-quality, with yield, control, reliability. Customized temperature profiles reverse gas flow help activate layer without introducing...
Porous piezoelectric materials have attracted much interest in the fields of sensing and energy harvesting owing to their low dielectric constant, high voltage coefficient, figure merit. However, introduction porosity can decrease which restricts enhancement output current power density. Herein, overcome these challenges, an array-structured composite harvester with aligned was constructed via a dual structure design strategy enhance Silver metal particles were introduced into porous barium...
Abstract Transition from multi-layer to monolayer and sub-monolayer thickness leads the many exotic properties distinctive applications of two-dimensional (2D) MoS 2 . This transition requires atomic-layer-precision thinning bulk without damaging remaining layers, which presently remains elusive. Here we report a soft, selective high-throughput etching in SF 6 + N plasmas with low-energy (<0.4 eV) electrons minimized ion-bombardment-related damage. Equal numbers layers are removed...
Plasma processing is effective in diverse modifications of nanoscale 2D-TMDC materials, owing to its uniquely controllable, and clean characteristics.
Janus transition-metal dichalcogenides (TMDCs) are emerging as special 2D materials with different chalcogen atoms covalently bonded on each side of the unit cell, resulting in interesting properties. To date, several synthetic strategies have been developed to realize TMDCs, which first involves stripping top-layer S MoS2 H atoms. However, there has little discussion intermediate MoSH. It is critical find appropriate plasma treatment time avoid sample damage. A thorough understanding...
Abstract Two-dimensional (2D) atomic crystal superlattices integrate diverse 2D layered materials enabling adjustable electronic and optical properties. However, tunability of the interlayer gap interactions remain challenging. Here we report a solution based on soft oxygen plasma intercalation. molecular (ACMSs) are produced by intercalating O 2 + ions into space using electric field. Stable layer is formed van der Waals with adjacent transition metal dichalcogenide (TMD) monolayers. The...
Abstract Chemical vapor deposition (CVD) has been widely used to synthesize high‐quality 2D transition‐metal dichalcogenides (TMDCs) from different precursors. At present, quantitative control of the precursor with high precision and good repeatability is still challenging. Moreover, process TMDCs designed patterns complicated. Here, by using an industrial inkjet‐printer, in situ aqueous robust usage at picogram (10 −12 g) level achieved, precisely tuning inkjet‐printing parameters, followed...
Abstract The controllable large‐area growth of single‐crystal vertical heterostructures based on 2D transition metal dichalcogenides (TMDs) remains a challenge. Here, MoS 2 /WS are synthesized using single‐step confined‐space chemical vapor epitaxy. can evolve into two different kinds by switching the H flow and off: with multiple WS domains be achieved without introducing due to numerous nucleation centers bottom monolayer during stage between growth. In contrast, isolated single domain...
Combining MoS2 with mature silicon technology is an effective method for preparing high-performance photodetectors. However, the previously studied MoS2/silicon-based heterojunction photodetectors cannot simultaneously demonstrate high responsivity, a fast response time, and broad spectral detection. We constructed n-type MoS2/p-type silicon-based photodetector. The SiO2 dielectric layer on substrate was pretreated soft plasma to change its thickness surface state. constitute multilayer...
Indium selenide (InSe) has gained extensive research attention due to its unique structure and broad tunable optical response in the visible near-infrared range. However, InSe a low absorption rate intrinsic indirect bandgap nature is easily affected by ambient air water vapor, thus limiting photoelectric performance. In this work, we significantly enhanced performance of photodetector taking advantage synergetic effect both surface plasmon resonance (SPR) engineering. The former induced an...
Two-dimensional molybdenum disulfide (MoS2) has recently drawn major attention due to its promising applications in electronics and optoelectronics. Chemical vapor deposition (CVD) is a scalable method produce large-area MoS2 monolayers, yet it challenging achieve shape-uniform, high-quality monolayered grains as random, diverse crystallographic orientations various shapes are produced the same CVD process. Here, we report growth of monolayers with uniform triangular dominating (up 89%) over...
The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied by temperature dependent current-voltage (T-I-V) measurements from 298 to 473 K. zero-bias barrier height qϕBn and ideality factor values determined based on the conventional thermionic-emission (TE) model strong functions of temperature, which cannot be explained standard TE theory. Various models considered analyze experimental I-V data. fitting results indicate that increased at low bias is due...
Abstract Integrated polarization‐sensitive photodetectors fabricated by geometric anisotropic 2D materials have become attractive in recent years. In this work, the successful construction of self‐driven and based on GaTe/MoS 2 p–n van der Waals (vdW) heterojunction is demonstrated mechanical exfoliation dry transfer methods. The vdW heterojunctions show ambipolar behavior, highest rectification ratio can reach 93.4. responsivity under 532 nm illumination reaches 145 mA W −1 response time...
Flash memory, as the core unit of a compute-in-memory (CIM) array, requires multiple positive and negative (PN) high voltages (HVs) for word lines (WLs) to operate during storage computation. A traditional WL driver generates these using several charge pumps (CPs), leading significant area overhead. This paper presents novel multi-mode CP (MMCP) that all required HVs CIM array under single CP, supporting operation in programming, readout, erase modes. Unlike voltage multipliers, MMCP...
ABSTRACT In this paper, a stress‐relaxed driver system applied to compute‐in‐memory (CIM) is propose for programming, reading and erasing of the CIM chip. The utilizes hierarchical regulation method achieve accurate row column selectivity, reducing area overhead peripheral array. order suppress voltage fluctuation power supply ground caused by direct path currents, power‐delay efficient positive negative level shifters are proposed. proposed allows transistors used in switch voltages at safe...