S. Diebold

ORCID: 0000-0001-8455-9132
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About
Contact & Profiles
Research Areas
  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology
  • Terahertz technology and applications
  • Semiconductor Lasers and Optical Devices
  • Advanced Power Amplifier Design
  • Antenna Design and Analysis
  • Millimeter-Wave Propagation and Modeling
  • Gyrotron and Vacuum Electronics Research
  • Photonic Crystals and Applications
  • Hemodynamic Monitoring and Therapy
  • Non-Invasive Vital Sign Monitoring
  • Electromagnetic Compatibility and Noise Suppression
  • Advanced Photonic Communication Systems
  • Advanced Fiber Laser Technologies
  • 3D IC and TSV technologies
  • Advanced Antenna and Metasurface Technologies
  • Microwave and Dielectric Measurement Techniques
  • ECG Monitoring and Analysis
  • Semiconductor materials and interfaces
  • Electromagnetic Compatibility and Measurements
  • Spectroscopy and Laser Applications
  • Wireless Body Area Networks

Osaka University
2014-2019

Murata (United States)
2018

Karlsruhe Institute of Technology
2011-2015

Institute of Science and Ethics
2015

Fraunhofer Institute for Applied Solid State Physics
2008-2014

GS Caltex (South Korea)
2013

Fraunhofer Society
2010

Abstract Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing the highest speeds. To date, however, only a small number devices exist that can operate up to this frequency. In study, we demonstrate frequency range be addressed by nanophotonic, silicon-based modulators. We exploit ultrafast Pockels effect using silicon–organic hybrid (SOH) platform, which combines highly nonlinear organic molecules with silicon waveguides. Until...

10.1038/lsa.2014.54 article EN cc-by Light Science & Applications 2014-05-23

A wireless data link operating at a carrier frequency of 220 GHz is supporting rate up to 25 Gbit/s in on-off-keyed PRBS as well complex 256-QAM (quadrature amplitude modulation) transmission. The millimeter-wave transmit and receive frontends consist active multi-functional microwave integrated circuits (MMICs), realized 50 nm mHEMT technology packaged into split-block waveguide modules. paper presents system considerations for links the 200-300-GHz range, discusses design performance...

10.1109/tthz.2011.2160021 article EN IEEE Transactions on Terahertz Science and Technology 2011-08-15

An error-free wireless transmission of a 9 Gbit/s on–off keying modulated signal as well 4 k video is demonstrated using resonant tunnelling diodes active elements in both the transmitter and receiver. The employed system modulation scheme enabling high data rate are discussed.

10.1049/el.2016.2941 article EN cc-by Electronics Letters 2016-10-21

Abstract Towards exploring advanced applications of terahertz (THz) electromagnetic waves, great efforts are being applied to develop a compact and sensitive THz receiver. Here, we propose simple coherent detection system using single resonant tunnelling diode (RTD) oscillator through self-oscillating mixing with an RTD injection-locked by carrier wave. Coherent is successfully demonstrated enhancement in the sensitivity >20 dB compared that direct detection. As proof concept, performed...

10.1038/s41598-019-54627-8 article EN cc-by Scientific Reports 2019-12-02

Circuit models of transmission line elements and a terahertz resonant tunneling diode (RTD) have been developed. The allow for reliable design RTD-based oscillator detector circuits. modeled based on electromagnetic field simulations dc measurements. Their accuracy has verified through S-parameter RTD the basis used circuit design. A new developed that can provide load impedance allows high-output-power oscillators high-sensitivity detectors. manufactured measured as an at frequencies around...

10.1109/tthz.2016.2592180 article EN IEEE Transactions on Terahertz Science and Technology 2016-01-01

This paper reports on possible interconnect solutions between a Silicon MMIC and an off-chip antenna. These shall both be integrated within plastic package to achieve 122 GHz system-in-package. Coplanar wire bond flip chip interconnects are shortly introduced compared. Simulation measurement results of matched then evaluated in frequency range 110 170 GHz. A 400 μm long as well self-matching half-wave compared interconnect.

10.1109/mwsym.2011.5972851 article EN 2011 IEEE MTT-S International Microwave Symposium 2011-06-01

In this paper a probe based measurement setup is presented that allows the characterization of antennas in frequency-range between 220 GHz and 325 GHz. The radiation pattern, as well gain return loss antenna under test (AUT) can be measured. limits system terms accuracy dynamic range are given. To demonstrate its functionality 240 patch-antenna on Gallium Arsenide (GaAs) substrate A comparison simulation shows very good agreement.

10.1109/iwat.2013.6518338 article EN 2013-03-01

This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends imaging radiometers at 60, 94 120 GHz. In SPDT switches, state-of-the-art insertion loss 1.4 1.8 dB is achieved 60 GHz, respectively. Rivalled only by PIN diode an <2 demonstrated up to Shorted stubs used compensate for parasitic capacitance allow matching. Linearity...

10.1109/emicc.2008.4772320 article EN European Microwave Integrated Circuit Conference 2008-10-01

A monolithic millimeter-wave integrated circuit power amplifier covering the entire V-, W- and F-band is presented. The applies magnetic distributed transformers in combination with traveling wave gain cells to achieve a -3 dB bandwidth that spans from 50 146 GHz, 12 maximum measured output of 15 dBm. With relative 98.3% PA achieves highest reported for amplifiers operating at around 100 GHz date.

10.1109/lmwc.2015.2456639 article EN IEEE Microwave and Wireless Components Letters 2015-08-13

This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends imaging radiometers at 60, 94 120 GHz. In SPDT switches, state-of-the-art insertion loss 1.4 1.8 dB is achieved 60 GHz, respectively. Rivalled only by PIN diode swithces, an Lt2 demonstrated up to Shorted stubs used compensate for parasitic capacitance allow matching....

10.1109/eumc.2008.4751740 article EN 2008-10-01

In this paper, we demonstrate the monolithic integration of two resonant tunneling diodes (RTD) to make a THz mixer circuit. The circuit uses RTDs, which are integrated in one carrier substrate. RTDs biased independently. fist RTD operates as an oscillator and provides local signal for second operating mixer. measurements that several substrate is feasible. This offers new possibilities based wireless communication sensing systems.

10.1117/12.2225209 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2016-04-29

For application in radiometry or noise measurement systems, an integrated active hot-cold load (AHCL) operating the W-band (75-110 GHz) is presented and realized as monolithic millimeter-wave circuit (MMIC). It makes use of a novel topology that employs only single source switches to provide cold hot reference temperature. The AHCL provides measured temperature 230 K 860 around 94 GHz, thus enabling two-point radiometric calibration absolute power measurements. has been fabricated two-port...

10.1109/tmtt.2014.2299770 article EN IEEE Transactions on Microwave Theory and Techniques 2014-01-31

The external feedback effect of a resonant tunneling diode oscillator in terahertz (THz) proximity wireless transmission is modeled and analyzed. model based on the circuit modeling passive structures. We investigate important system parameters such as reflectivities at transmitter receiver power coupling. It found that frequency change, change rate, direct-current are mainly dependent reflectivity receiver. received caused by transmitter. simulations agree well with experimental results. In...

10.1109/tthz.2018.2842209 article EN IEEE Transactions on Terahertz Science and Technology 2018-05-31

This paper presents three different D-Band (110 - 170GHz) phase shifters for high-bandwidth communication and radar applications. The proposed offer shifts of 180°, 90° 45° show only very little amplitudeand phase-error over the full D-Band. Furthermore based on measurement results individual group factor an eight element phased array system was calculated. were used to verify suitability such as feeding elements in systems. It is shown that these are a good choice high bandwidth systems...

10.1109/gemic.2015.7107789 article EN German Microwave Conference 2015-03-01

For application in radar and communication systems operating the frequency range around 250 GHz, a power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) has been developed. The makes use of novel coupler approach allowing for in-phase equal-magnitude distribution an incoming signal to four parallel output ports. This is possible due subtle grounded coplanar waveguide air-bridge microstrip transmission lines, providing different propagation constants. With size...

10.1109/tmtt.2015.2396492 article EN IEEE Transactions on Microwave Theory and Techniques 2015-02-05

Using three dimensional (3-D) electromagnetic (EM) field simulations, a fully scalable grounded coplanar wave- guide (GCPW) passive library was developed. It allows for all impedances between 28 and 68 Ohm. The contains elements needed accurate millimeter-wave mono- lithic integrated circuit (MMIC) design, i.e. straight transmission lines, discontinuities, such as round bends, square corners, T- cross junctions well quasi lumped components in environment, e.g. parallel series...

10.23919/eumc.2011.6101798 article EN 2011-10-01

A compact broadband unit cell for the design of frequency multipliers is presented. Based on methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture introduced, pushing ultra-broadband multiplication into high millimeter-wave range. The realized microwave monolithic circuits (MMICs) using this topology provide second harmonic generation over several decades only single cell. are fabricated in metamorphic HEMT technology convenient integration...

10.1109/tmtt.2014.2318272 article EN IEEE Transactions on Microwave Theory and Techniques 2014-04-29

Balanced amplifier monolithic millimeter-wave integrated circuits (MMICs) for application in high resolution radar and wireless communication with an output power of up to 7.5 dBm at 210 GHz are shown this paper. The small-signal gain is more than 13 dB from 200 270 23 between 240 GHz, respectively. Airbridge microstrip transmission lines used matching, biasing the design 90° hybrid couplers.

10.1109/irmmw-thz.2013.6665891 article EN 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) 2013-09-01

We report a resonant tunneling diode (RTD) receiver for terahertz wireless communications based on coherent detection to enhance sensitivity. To achieve high-speed data rate in communication system using RTD devices, we employed photonics-based source as the transmitter. demonstrated 27-Gbit/s real-time error-free 300-GHz band, which is highest ever reported receivers, best of our knowledge.

10.23919/apmc.2018.8617565 article EN 2015 Asia-Pacific Microwave Conference (APMC) 2018-11-01

Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order materials allow building high-speed low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on 90 GHz bandwidth phase modulator, 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By...

10.1117/12.2005866 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2013-03-14

The range of radar and communication systems working in the atmospheric window around 140 GHz strongly is limited by output power transmit amplifier. To allow for long application, a broadband amplifier with 145 center frequency -3dB bandwidth from 130 to 160 has been developed. It makes use binary dividing topology, which compact size allows very designs. developed more than 15dB small-signal gain, added efficiency about 4% an 13.1 dBm, i.e. 20 mW. three-stage 100nm gate-length metamorphic...

10.1109/apmc.2012.6421625 article EN 2012-12-01

A compact balanced amplifier monolithic milli-meter-wave integrated circuit (MMIC) for the frequency range from 150 to 240 GHz is developed using airbridge microstrip (AirMS) transmission lines in a 35nm gate-length metamorphic high electron mobility transistor (mHEMT) technology. The hybrid couplers design are realized airbridge-stacked coupled lines. three-stage cascode achieves small-signal gain of more than 15 dB between and GHz, 210 230 even 23 dB. In latter variation measured curve...

10.1109/inmmic.2012.6331940 article EN Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2012-09-01
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