A5063973470- Radio Frequency Integrated Circuit Design
- Microwave Engineering and Waveguides
- Semiconductor Quantum Structures and Devices
- Superconducting and THz Device Technology
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Millimeter-Wave Propagation and Modeling
- Terahertz technology and applications
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Advanced SAR Imaging Techniques
- Advanced Power Amplifier Design
- Acoustic Wave Resonator Technologies
- Microwave Imaging and Scattering Analysis
- Gyrotron and Vacuum Electronics Research
- Microwave and Dielectric Measurement Techniques
- Satellite Communication Systems
- Antenna Design and Analysis
- Advancements in PLL and VCO Technologies
- Optical Network Technologies
- Electromagnetic Compatibility and Noise Suppression
- Spacecraft Design and Technology
- Radar Systems and Signal Processing
- Precipitation Measurement and Analysis
- Antenna Design and Optimization
Fraunhofer Institute for Applied Solid State Physics
2016-2025
University of Stuttgart
2013-2022
Karlsruhe Institute of Technology
2017-2021
Fraunhofer Institute for High Frequency Physics and Radar Techniques
2019
Fraunhofer Society
2003-2015
A wireless data link operating at a carrier frequency of 220 GHz is supporting rate up to 25 Gbit/s in on-off-keyed PRBS as well complex 256-QAM (quadrature amplitude modulation) transmission. The millimeter-wave transmit and receive frontends consist active multi-functional microwave integrated circuits (MMICs), realized 50 nm mHEMT technology packaged into split-block waveguide modules. paper presents system considerations for links the 200-300-GHz range, discusses design performance...
This contribution presents a full MMIC chip set, transmit and receive RF frontend data transmission experiments at carrier frequency of 300GHz with rates up to 64Gbit/s. The radio is dedicated future high rate indoor wireless communication, serving application scenarios such as smart offices, centers home theaters. paper reviews the underlying speed transistor process, performance quadrature transmitter receiver, well local oscillator generation by means multiplication. Initial in...
In this paper, a radar demonstrator system with real-time capability operating at W -band is presented. It operates 90-100 GHz and provides 3-D information about the illuminated scene. The uses frequency modulated continuous wave signals to extract range whereupon long-range applications are aimed at. consists of sparse array 22 transmitting receiving antennas makes use multiple input output (MIMO) principle. A back-propagation algorithm cross-range information. With help simulations...
Ultra-broadband mm-wave wireless data transmission at 240 GHz carrier frequency is demonstrated successfully over a distance of 40m using direct conversion MMIC-based RF front end. A new generation 64GS/s Fujitsu DAC evaluation board provides 64Gbit/s and 96Gbit/s rates for QPSK 8-PSK modulated baseband signals. The overall link performance evaluated in terms error vector magnitude (EVM) measurement. For the EVM measurement shows values 23.7% 21.6%, respectively.
In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic high-electron-mobility transistor (mHEMT) technology. Two MMICs are reported, based unit cell, which parallelized two times using different Wilkinson combiners. combiners designed elevated coplanar waveguide and air-bridge thin-film transmission lines in order to...
Two compact single-chip 94-GHz frequency-modulated continuous-wave (FMCW) radar modules have been developed for high-resolution sensing under adverse conditions and environments. The first module contains a monolithic microwave integrated circuit (MMIC) consisting of mechanically electrically tunable voltage-controlled oscillator (VCO) with buffer amplifier, 10-dB coupler, medium-power low-noise balanced rat-race high electron-mobility transistor (HEMT) diode mixer, driver amplifier to...
In this paper, the development of 220-GHz low-noise amplifier (LNA) MMICs for use in high-resolution active and passive millimeter-wave imaging systems is presented. The circuits have been realized using a well-proven 0.1-/spl mu/m gate length an advanced 0.05-/spl InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor technology. Furthermore, coplanar circuit topology combination with cascode transistors was applied, leading to compact chip size excellent gain...
A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence a channel and density as 9800 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs 6.1times1012 xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> , respectively. To enable maximum extrinsic transconductance g <sub xmlns:xlink="http://www.w3.org/1999/xlink">m,</sub>...
In this paper we present a very compact 0.28 × 0.55 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> six-stage terahertz monolithic integrated circuit (TMIC) using 35 nm gate length metamorphic high electron mobility transistors (mHEMTs). A linear gain of 20.3 dB at 610 GHz and more than 18 over the bandwidth from 557 to 616 was achieved for drain voltage V <sub xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> only 0.6 V. The noise...
A compact WR-1.5 (500-750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 20 nm metamorphic high electron mobility transistors (mHEMTs). The realized six-stage LNA TMIC achieved maximum gain of 15.4 dB at 576 GHz and more than 10 in the frequency range from 555 to 619 GHz. For low-loss packaging circuit, waveguide-to-microstrip transition fabricated ¼m thick GaAs substrate, demonstrating an insertion loss only 1...
This paper presents a strategy for urban site monitoring by very high-resolution circular synthetic aperture radar (CSAR) imaging of multiple aspects. We analytically derive the limits coherent azimuth processing nonplanar objects in CSAR if no digital surface model (DSM) is available. The result indicates level maximum achievable resolution these this geometry. difficulty constantly illuminating specific scene full aspect mode (360°) such small wavelengths solved hardware- and software-side...
A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. based a 50 nm gate length and includes μm substrate backside process with dry etched through-substrate vias. For the electron confinement an ln <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> As/ln...
Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm 50 gate length metamorphic HEMT (mHEMT) process presented. These mHEMT technology feature an extrinsic ƒ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> of 220 / 375 GHz transconduction g xmlns:xlink="http://www.w3.org/1999/xlink">m, max</inf> 1300 1800 mS/mm. By using several amplifier MMICs were realized. A small...
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) modules for use in a high-resolution radar system operating at 210 GHz. A frequency multiplier by six as well subharmonically pumped GHz dual-gate field-effect transistor (FET) mixer 105 power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility (mHEMT) technology combination with...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MMICs) and modules for use in next-generation sensors high-data-rate wireless communication systems, operating 300-500-GHz frequency regime. A four-stage 460-GHz amplifier MMIC a 440-GHz class-B doubler circuit have been successfully realized using our 35-nm InAlAs/InGaAs-based metamorphic high-electron mobility transistor (mHEMT) technology combination with grounded coplanar topology (GCPW)....
The capability of imaging and surveying ground areas with airborne spaceborne sensors has a very high priority in many applications, both the civilian military sectors. One most essential uses this is disaster monitoring, where up-to-date, reliable images data are vital for undertaking coordinating rescue actions. Sensors space accurate but typically have long revisit time, thus their use continuous monitoring limited. Manned aircrafts equipped optical, infrared, synthetic aperture radar...
A broadband frequency-modulated continuous-wave radar that operates at a center frequency of 240 GHz is being presented. The main focus this paper on the monolithic integration millimeter wave transceiver front end circuit and its validation wafer level, module system level. chip was developed using 35-nm InAlAs/InGaAs-based metamorphic high electron mobility transistor technology with an advanced back-end-of-line (BEOL) process. key functional building blocks were as part integrated library...