A5084389888- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Plasmonic and Surface Plasmon Research
- Advanced Photonic Communication Systems
- Advanced Biosensing Techniques and Applications
- Radio Frequency Integrated Circuit Design
- Nanofabrication and Lithography Techniques
- Advanced biosensing and bioanalysis techniques
- Gold and Silver Nanoparticles Synthesis and Applications
- Optical Network Technologies
- Molecular Junctions and Nanostructures
- Advanced Fiber Laser Technologies
- Advanced Fiber Optic Sensors
- Biosensors and Analytical Detection
- Microwave Engineering and Waveguides
- Sensor Technology and Measurement Systems
- Phytoplasmas and Hemiptera pathogens
- Microfluidic and Capillary Electrophoresis Applications
- Analytical Chemistry and Sensors
- Robotic Path Planning Algorithms
- Optical Coatings and Gratings
- Monoclonal and Polyclonal Antibodies Research
- Advanced Optical Sensing Technologies
Université Polytechnique Hauts-de-France
1997-2021
École Centrale de Lille
1997-2021
Institut d'électronique de microélectronique et de nanotechnologie
2006-2021
Université de Lille
1997-2021
Centre National de la Recherche Scientifique
1991-2021
Institut d’Optique Graduate School
1997-2020
Université Lille Nord de France
2011
Centre de Nanosciences et de Nanotechnologies
2003
Université d'Artois
1991
Centre de Gestion Scientifique
1985
We report the optical characterization of an InP structure constituted by waveguides coupled to microcavity disk resonators. The lateral waveguide confinement is obtained deep reactive ion etching through guiding layer. demonstrate possibility tuning optically resonance wavelength into illuminating resonator. a blueshift 3 nm laser irradiation at 980 corresponding photoinduced change in effective refractive index 6 x 10(-3). behaves as tunable demultiplexer.
Abstract In this paper, we describe a novel fabrication method of microfluidic integrated surface plasmon resonance (SPR) gold chip based on (3-mercaptopropyl) trimethoxy silane (MPTMS) self-assembled monolayer. This monolayer was formed at the made polydimethylsiloxane (PDMS). Its presence confirmed by contact angle and Fourier transform infrared spectroscopy measurements modified PDMS surface. A basic, but nevertheless appropriate, 4-channel system reported SPR sensor. Sealing tests were...
A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs Schottky photodiode associated with FET. Sensitivities, response times and noise properties the circuit have measured are explained, taking into account various effects such as doping level, thickness depletion region capacitance diode.
The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These are straight curved waveguides as well Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions this implicitly targeted in different parts process work. First, propagation excess losses because a bend or Y-junction modelled beam method finite difference time domain method. Then, technological used fabricate these presented;...
Surface plasmon resonance (SPR) sensing is a well-established high-sensitivity, label-free and real-time detection technique for biomolecular interaction study. Its primary working principle consists of the measurement optical refractive index medium that in close vicinity sensor surface. Bio-functionalization techniques allow events to be located such way. Since indices any varies with temperature, place where takes shall within temperature-controlled environment order ensure temperature...
The monolithic integration of optoelectronic devices with microwave impedance matching networks is presented. These are a GaInAs photodiodes and GaInAsP buried ridge stripe structure laser emitting at 1.3 mu m; both fabricated on semi-insulating InP substrate. networks, consisting reactive components, have been designed to match these 50 Omega 6 GHz bandwidth close 10%. Compared an unmatched link, improvement 12 dB theoretically obtained; experimentally, it has measured 11.4 5.6 GHz.< <ETX...
Microwave impedance matching networks have been, for the first time, monolithically integrated with GaInAs p-i-n photodiodes and GaInAsP buried ridge stripe structure lasers ( lambda =1.3 mu m), both on a semi-insulating InP substrate. The microwave power transfer optical links were compared using matched unmatched devices. Compared to an link, improvement of 11.4 dB at 5.6 GHz (600 MHz bandwidth) is obtained totally one; this result corresponds quite well theoretical prediction (12 6 GHz).<...
We report on a new type of optical switch based submicron structures and present the results obtained first nanophotonics switch. First, we passive components that are required in an or switching matrix: straight waveguides, bend waveguides Y junctions. Measured propagation loss lower than 1dB/mm for wider 1&mgr;m. Excess bending is 1dB curvature radius as small 30&mgr;m. Loss due to branching angle junction 2dB wide 20°. Optical design two dissymmetric DOS like active junctions; theoretical...
We present the design, implementation and characterization of an integrated surface plasmon resonance biosensor chip involving diffractive optical coupling elements avoiding need prism coupling. The sensor uses angular interrogation principle includes two diffraction gratings SPR sensing zone. theoretical design is presented as well fabrication procedure. Experimental results, using reference index fluids, are compared to predictions experimental results. believe that this architecture...
We report on the characterization of an InP/InGaAsP-material-based microdisk resonator optical filter. The originality here is constituted by use a localized control electrode that used for tuning resonance wavelength filter via injection driving current. Tuning close to 8 nm has been experimentally achieved drive current 80 mA.
Abstract We present a new large/small signal equivalent circuit for semiconductor lasers, valid above‐ as well below‐threshold operating conditions, based on the monomode rate equations and polynomial approximation of Fermi integral. The model is thus conditions large injection. Results obtained by this match perfectly those numerical integration equations. easy to implement solve nonlinear analysis software such SPICE consequently allows study parasitic effects laser behavior in complex...
This paper demonstrates the feasibility of MMICs able to improve global performances an optical link, over a typical 1 20 GHz frequency range. A distributed laser driver and photodiode Bootstrap follower provide active matching between 50/spl Omega/ optoelectronic tranducers.
This paper demonstrates the feasibility of MMICs able to improve global performances an optical link, over a typical 1 20 GHz frequency range. A distributed laser driver and photodiode bootstrap follower provide active matching between 50 /spl Omega/ optoelectronic transducers.
The authors report the realization of monolithic impedance-matched lasers and photodiodes on InP substrates. objective was to demonstrate advantage such an approach by using a transmission link operating at 6 GHz 1.3 mu m. Starting from analysis modeling discrete fabricated in Thomson-CSF/LCR, equivalent circuits each device have been determined design associated impedance-matching cells.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
We report on the performance of an optical switch based use narrow deep-etched InP waveguides. A DOS-like structure has been designed and fabricated. First characterization results are reported. They show crosstalk value close to -20dB.
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This paper presents experimental results on signal to noise ratio measurements performed heterojunction phototransistors. The comparison with a PIN photodiode is also reported. Simulations have been carried out determine the evolution of SNR.
Abstract It is shown that local and large lattice mismatch epitaxies could be useful techniques for the fabrication of optoelectronic integrated circuits. As an example, we fabricated a monolithic resonant photoreceiver which associates long‐wavelength metal‐semiconductor‐metal photodetector, GaAs MESFET preamplifier, inductor. The GaAs/GalnAs heteroepitaxy needed photodetector was selectively grown using SiO 2 mask entire circuit on silicon substrate. Compared to PIN photodiode loaded with...
An equivalent circuit large-signal model of semiconductor lasers for microwave applications is presented. The implemented on SPICE software and based a modified set single-mode rate equations. carrier density in the active region related to potential at terminals by polynomial approximation Fermi integral. Different recombination mechanisms (Schockley-Hall-Read, spontaneous, Auger) are represented separate terms not as global constant lifetime. also accounts saturable absorption occurring...
We report on the fabrication and characterization of a very compact filtering structure based resonant stub fabricated using optical wire technology in InP material line. The length is close to 1.6 microm has been designed get resonance wavelength 1550 nm. showed frequency at 1520 nm with 12 dB peak.