A. Sahu

ORCID: 0000-0001-8520-0981
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About
Contact & Profiles
Research Areas
  • Semiconductor Quantum Structures and Devices
  • Advanced Photocatalysis Techniques
  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Quantum and electron transport phenomena
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Organic Light-Emitting Diodes Research
  • Polyoxometalates: Synthesis and Applications
  • Magnetism in coordination complexes

Ritsumeikan University
2024

National Institute of Science and Technology
2018-2022

Three 1-(anthracene-9-ylmethyl)-3-isopropyl-imidazol-2-thione Zn(II) halide complexes (1-3) and one 1-(anthracene-9-ylmethyl)-3-isopropyl-imidazol-2-selone dichloride complex (4) were synthesized characterized. Complexes 2, 3, 4 exhibited distorted tetrahedral geometries, while 1 adopted a regular geometry. All these displayed emission in the crystalline state, with 3 emitting yellow region blue region, 2 gave bluish-green emission. The ligands L1 L2, however, showed no solution state....

10.1039/d4dt02924k article EN Dalton Transactions 2024-12-09

We study the effect of asymmetric potential profile on electron mobility µ a double quantum well (DQW) structure. In DQW, along with confinement effect, coupling subband states between wells further splits energy levels thereby acting as an additional degree freedom to regulate structure properties. introduce asymmetry (1) in doping concentrations barriers, (2) shape wells, i.e., taking one square and another parabolic (3) by applying electric field F profile. calculate low temperature...

10.1063/1.5050730 article EN AIP conference proceedings 2018-01-01

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ GaAs|In x Ga 1-x As double quantum-well pseudo-morphic modulation doped field-effect transistor structure. solve Schrodinger and Poisson's equations self-consistently to obtain sub-band energy levels wave functions. consider scatterings due ionized impurities (IMP), alloy disorder (AL), interface roughness (IR) calculate for a system having occupancy, in which inter-sub-band effects play an important...

10.21883/ftp.2020.07.49509.8743 article EN Журнал технической физики 2020-01-01
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