A5032052367- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Physics of Superconductivity and Magnetism
- Semiconductor Lasers and Optical Devices
- Spectroscopy and Quantum Chemical Studies
- Handwritten Text Recognition Techniques
- Image Processing and 3D Reconstruction
- Electronic and Structural Properties of Oxides
- Vehicle License Plate Recognition
- Artificial Intelligence in Healthcare
- Advanced Semiconductor Detectors and Materials
Berhampur University
2024
National Institute of Science and Technology
2018-2022
We analyze the low temperature multisubband electron mobility in AlxGa1−xAs–GaAs parabolic double quantum well structures which outer barriers are delta doped with Si. The structural potential, obtained from gradual variation of alloy fraction x (from 0 to xp), partly compensates triangular like potential profile near interfaces inducing electrons move towards centre wells. study effect interplay ionized impurity (II) scattering and disorder (AD) on subband mobility. show that when single is...
We study the effect of external electric field Fext on low-temperature electron mobility μ in an asymmetrically doped AlxGa1-xAs based V-shaped double quantum well (VDQW) structure. show that nonlinearity µ occurs under subband occupancy account intersubband effects. The alters VDQW potential leading to transfer wave functions between wells, which affects scattering potentials and hence μ. In structure, due alloy channel layer, disorder (Al-) happens be significant along with ionised...
Herein, it is shown that the oscillation of low temperature electron mobility μ can be obtained as a function external electric field F in Al x Ga 1 −x As based V‐shaped double quantum well (VQW) structure. The enhanced by increasing width and barrier decreasing doping concentration height potential. due to ionized impurity (II‐) scattering II responsible for through intersubband effects within subband occupancy. On other hand, alloy disorder (AD‐) scattering, AD , which shows almost...
We calculate multisubband electron mobility in a Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As parabolic double quantum well structure. The wells are formed by varying x from 0 to 0.1. For barriers we take x=0.3. side delta-doped with Si. electrons diffuse into the adjacent inducing triangular like potential profiles near interfaces. structural within partly compensates...
One of the ongoing uses offline OCR is identification Odia character pictures. Here, an effort has been made to create a useful feature extraction method that will aid in recognizing handwritten digits, basic scripts, and compound characters Odia. recognition implemented using three different types techniques. First, Three techniques are used separately identify characters. collection combined with set common machine learning methods after that. In second strategy, well-known RNN CNN carry...
The effect of asymmetric doping profile on the electron mobility μ is studied in a Field Effect Transistor (FET) structure based AlxGa1−xAs double V-shaped quantum well (D-VQW) presence an external electric field F. We introduce asymmetry by considering different concentrations side barriers along substrate and surface. resultant potential varied as function Accordingly energy levels El wave functions ξl within coupled alter. By varying F suitably resonance subband states can be realized...
We study the effect of parabolic potential on improvement low temperature multisubband electron mobility µ in a GaAs/AlxGa1-xAs hybrid double quantum well (HD) structure. The HD consists square and another towards bottom top surfaces structure respectively. calculate as function width w by considering different scattering mechanisms such as: Ionized Impurity (II-), Interface Roughness (IR-) Alloy Disorder (AD-) scatterings. show that is mostly decided µII. compare results with (SD) > (SD)....
In this work, we present theoretically the effect of external electric field Fe on low temperature multisubband electron mobility µ in V-shaped double quantum well (V-DQW) HEMT structure. We consider impact ionized impurity and alloy disorder scatterings for calculation µ. show that, proposed structure, when Fe, is absent, there are two subbands occupied below Fermi levels. However, as increases, an alteration potential profile, which changes energy levels wave function distributions leading...
The electron mobility μ exhibits oscillatory behavior with gate electric field F in an asymmetrically doped double V-shaped Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As quantum well effect transistor structure. By changing F, single-double-single subband occupancy of the system is obtained. We show that oscillates within as a function near resonance states due to relocation...
We analyze the enhancement of multisubband electron mobility in delta-doped Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As parabolic quantum well structures. show that is considerably enhanced a compared to square due shifting subband wave functions towards centre through influence structure potential. analyse interplay different scattering mechanisms on mediated by...
We analyse the effect of strain on low temperature electron mobility in a pseudomorphic GaAs/InxGa1-xAs double quantum well structure. consider ionized impurity scattering, alloy disorder scattering and interface roughness scattering. In multisubband occupied system, intersubband interaction has an important role calculation mobility. interplay different mechanisms by changing width. show that causes enhancement when there is single subband occupancy. However, occupancy, reduces mediated...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation T. Sahu, S. Palo, C. Tripathy, P. K. Nayak; Electric field induced enhancement of low temperature electron mobility in coupled InGaAs/InAlAs double quantum well structures. AIP Conference Proceedings 23 July 2012; 1461 (1): 255–258. https://doi.org/10.1063/1.4736899 Download citation file: Ris (Zotero)...
We study the effect of external electric field F in enhancing multisubband electron mobility mediated by intersubband effects a pseudomorphic GaAs/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As coupled double quantum well structure. An changes potential profile structure which turn amends subband energy levels and wave functions. By varying F, occupation different subbands...
We analyse the effect of parabolic potential profile on multrisubband electron mobility in a GaAs-AlGaAs double quantum well structure. show that case structure, is enhanced at large widths which two subbands are occupied. On other hand for single well, occupation second subband occurs width compared to square well. The enhances nonlinearly with increase till
We study the effect of asymmetric potential profile on electron mobility µ a double quantum well (DQW) structure. In DQW, along with confinement effect, coupling subband states between wells further splits energy levels thereby acting as an additional degree freedom to regulate structure properties. introduce asymmetry (1) in doping concentrations barriers, (2) shape wells, i.e., taking one square and another parabolic (3) by applying electric field F profile. calculate low temperature...