A5082340850- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Quantum and electron transport phenomena
- Ga2O3 and related materials
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Agricultural Economics and Practices
- Advanced Antenna and Metasurface Technologies
- Antenna Design and Optimization
- Nanowire Synthesis and Applications
- Leaf Properties and Growth Measurement
- Parallel Computing and Optimization Techniques
- Antenna Design and Analysis
- Quantum-Dot Cellular Automata
- ZnO doping and properties
- Induction Heating and Inverter Technology
- IoT-based Smart Home Systems
- GNSS positioning and interference
- Agricultural Science and Fertilization
- Quantum Information and Cryptography
- Evolutionary Algorithms and Applications
- Water Quality Monitoring Technologies
Odisha University of Agriculture and Technology
2023-2024
Siksha O Anusandhan University
2021-2024
Odisha University of Technology and Research
2023-2024
Krishi Vigyan Kendra, Ghatkhed Amravati
2024
Institute of Technical Education
2021-2023
Air Quality Consultants (United Kingdom)
2022
SMART Reading
2022
National Institute of Science and Technology
2021
Cornell University
2020
Indira Gandhi Institute of Technology
2018
The pursuit of energy efficiency has become a cornerstone sustainable development, as societies strive to mitigate the environmental impacts production and consumption. Green technologies—ranging from clean systems such photovoltaic, Aerodynamic, Hydraulic power energy-efficient appliances smart grid solutions—offer transformative potential for reducing greenhouse gas emissions conserving finite natural resources. This paper explores integration green technologies into existing...
Finger Millet is a nutritional powerhouse as it contains many essential nutrients including iron, protein, calcium, dietary fibre, and carbohydrates. Since it's gluten-free cereal, has received attention for its impressive value in nutrition thus serving potential tool battling malnutrition. It resistant to extreme weather conditions. Despite rich nutrient content, recent studies show lesser intake of millets whole. Therefore, field experiment been conducted at the farmers' Bargarh district...
A strong need exists for a wide-bandgap p-type transistor counterpart of the n-channel GaN HEMTs power electronics and novel RF circuits. In this work, first p-channel nitride transistors that break GHz speed barrier are demonstrated. By leveraging unique single-channel high-density polarization-induced 2D hole gas GaN/AlN heterostructure, best-in-class contact resistances, scaled T-gate design, on-currents 428 mA/mm observed, with cutoff frequencies in 20 regime. These observations...
Abstract Stress/strain engineering techniques are employed to boost the performance of Gate-all-around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm technology nodes and beyond. In this work, we report on 3D numerical simulation study impacts source/drain epitaxial uniaxial strained-SiGe channel stresses p-type NSFETs. It is shown that improves drive current by up 107% due higher compressive stress while 3-stack NSFET can achieve an enhancement in even 187%...
Abstract AlGaN HEMTs are popular devices for high-frequency applications. At higher frequencies, nonlinearity effects major concerns and need serious attention. In this work, we have attempted to improve the linearity performance of graded channel Al x Ga 1− N/GaN in comparison with abrupt GaN through Technology Computer Aided (TCAD) simulation. HEMTs, linearly grading composition layer, reduces local carrier densities provides improvement saturation velocity. This an avenue overall...
Abstract In this work, we present a physics-based analysis of two-dimensional electron gas (2DEG) sheet carrier density and other microwave characteristics such as transconductance cutoff frequency Al x Ga 1−x N/GaN high mobility transistors (HEMT). An accurate polarization-dependent charge control-based is performed for performance assessment in terms current, transconductance, gate capacitances, lattice-mismatched AlGaN/GaN HEMTs. The influence stress on spontaneous piezoelectric...
The high-power GaN High Electron Mobility Transistors (HEMT) are used for next-generation high-speed R.F. applications. This work intends to simulate and analyze the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> N/GaN HEMT obtain two-dimensional electron gas (2DEG). variation of 2DEG concentration by varying concentrations width N layer has been explored. exhibits importance a...
In this paper, we have reported the impact of gate work function variability on nanosheet field effect transistors (FETs) using 3D TCAD numerical device simulation. We also studied WFV multiple stack channels in NSFETs and NWFETs. The statistical simulation predicts that MGG induced mainly affects threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) on-current (I xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> )....
Abstract Strain engineering has proven to be a useful technique for enhancing the performance of many modern-day transistors. Stress can also have non-trivial effect on GaN HEMTs, which are devices choice high-power, high-frequency microwave applications. Process-induced stress significant AlGaN/GaN HEMT electrical characteristics in addition growth-induced strain present due lattice constant mismatch between device layers. Understanding true impact process-induced is highly necessary. This...
A field experiment was conducted at the farmer's of Bargarh district Odisha in kharif, 2023 under demonstration programme Krishi Vigyan Kendra, to study "Effect nutrient management practices on growth, yield and economics cotton crop west central table land zone Odisha". The treatments were taken as Farmer's practice (FP) improper recommended (RP) STBF + one spray 2% urea 1% MgSo4 during flowering boll development stage. Each treatment replicated for 10 times with randomized block design....
Abstract Here, we analyse the effect of structure parameters like well width ( w ), central barrier b and alloy concentration x ) on multisubband electron mobility μ in a GaAs-Al Ga 1-x As based modulation doped asymmetric V-shaped-double-quantum-well (VDQW) structure. The asymmetry potential is generated through difference doping concentrations N d side barriers i.e., 1 (0 to 4 × 10 18 cm −3 2 (2 ). calculated by considering ionised impurity (imp) disorder (ad) scattering mechanisms....
The industry standard for RF-SOI systems is presently Partially Depleted silicon-on-insulator MOSFETs. Substrate losses, crosstalk, and non-linearities are the biggest obstacles to creating high-performance RF ICs in Si-based technology. Several critical parameters like RON, COFF, breakdown voltage, voltage distribution (balance) across a stack of several MOSFETs key figures-of-merit (FOM) switch applications. In this work, predictive TCAD modeling simulations performed analyze role back-end...
Strain engineering has proved to be useful for enhancing the performance of AlGaN/GaN HEMT devices. The device transfer characteristics are significantly affected by proper optimization stress in nitride passivation layer. Nonlinearity effects major concern devices at high frequencies which can vary due intrinsic In this paper first time, we have reported effect on linearity device. With L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf>...
Currently, polarization junctions (PJs) are the most promising candidates for power devices. PJs with wide band gap semiconductors like GaN can further enhance performance in terms of improved breakdown voltage and less susceptible to leakage. In this work, a double-hetero GaN/AlGaN/GaN PJ is proposed realize 2-D hole gas (2DHG) electron (2DEG) at upper lower junction device. The DC, CV, characteristics have been investigated. Moreover, effects bulk interface traps on substrate leakage...
The effect of asymmetric doping profile on the electron mobility μ is studied in a Field Effect Transistor (FET) structure based AlxGa1−xAs double V-shaped quantum well (D-VQW) presence an external electric field F. We introduce asymmetry by considering different concentrations side barriers along substrate and surface. resultant potential varied as function Accordingly energy levels El wave functions ξl within coupled alter. By varying F suitably resonance subband states can be realized...
As per present day technology, low power VLSI designs are on demand for the electronic market. A design is considered to be an ultimate which consumes power, lesser area and shows minimum delay. Therefore, efficient management of delay have become major constraints in designing circuits like super computers, mobiles, digital calculators, signal processors etc. In this work, attention has been given a 32-bit Multiplier-Accumulator Unit (MAU) basing concept Vedic Mathematics its optimization....