A5102004787- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Optical Coatings and Gratings
- Semiconductor materials and devices
- Metamaterials and Metasurfaces Applications
- solar cell performance optimization
- Advanced Antenna and Metasurface Technologies
- Advanced Fiber Laser Technologies
- Antenna Design and Analysis
- Metal and Thin Film Mechanics
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Photonic Crystals and Applications
- Theoretical and Computational Physics
- Silicon Nanostructures and Photoluminescence
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor Lasers and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Characterization and Applications of Magnetic Nanoparticles
- Integrated Circuits and Semiconductor Failure Analysis
- HVDC Systems and Fault Protection
- Semiconductor materials and interfaces
National Yang Ming Chiao Tung University
2012-2024
Academia Sinica
2019-2022
Industrial Technology Research Institute
2004-2022
Research Center for Applied Science, Academia Sinica
2017-2018
United Microelectronics (Taiwan)
2006
Rockwell Automation (United States)
1983
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, thermal conductivity, operating frequency, temperature, and saturation drift velocity, SiC has attracted much attention from researchers industry for decades. With advances in material science processing technology, many power applications new smart energy vehicles, converters, inverters, supplies are being realized using devices. In particular, MOSFETs generally chosen be used a device due their...
The influence of the microstructure geometry patterned sapphire substrates (PSS) on light extraction efficiency (LEE) GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures various dimensions are studied, along with dome and mixed microstructures. LEE found to mainly depend surface slope. rises quickly slope flattens out when exceeds 0.6. Scaling down has little effect LEE. Light rays travel longer distances in PSS LEDs, as compared LEDs grown a flat substrate. Keeping...
The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the based materials. Growth temperature optimization was performed obtain best quality InN layer MOCVD system. dependent photoluminescence (PL) can information about thermal quenching PL transitions at least two non-radiative processes be observed. X-ray diffraction energy dispersive spectroscopy are applied confirm inclusion indium formation layer. band alignment such...
Abstract This study investigates the effect of O 2 plasma treatment on physical and electrical properties surface region in Schottky-gate AlGaN/GaN high electron mobility transistor (HEMT). We demonstrate that significantly reduces gate leakage current enhances on/off ratio by three orders magnitude compared to devices without treatment. The removes organic chemical residue forms Ga–O bonds AlGaN beneath metal. X-ray photoelectron spectroscopy results indicate effectively a compound oxide...
The InN dot-like layer was applied in the gallium nitride based material for purpose of infrared photodetectors (PDs). This grown by a low-pressure metal organic chemical vapor deposition technology under different growth temperatures. X-ray diffraction patterns provide information crystal structure and hexagonal orientation detected. Raman shifts photoluminescence were also used to characterize quality film. Finally, fabricated Schottky-type photodetector tested solar simulator...
This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition wells (GQWs) toward p-GaN as absorber. The GQW can improve fill factor from 42% to 62% and enhance short current density 0.8 mA/cm2 0.92 mA/cm2, compares typical MQW cells. As a result, PCE is boosted 0.63% 1.11% under AM1.5G illumination. Based on simulation experimental results, be attributed improved carrier collection...
In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped was formed at interface between crown-shaped patterned sapphire substrates (CPSS) and GaN epilayer conventional photolithography. transmission electron microscopy images demonstrate that threading dislocations were significantly suppressed epitaxial lateral overgrowth (ELOG). Monte Carlo ray-tracing simulation...
Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This can be further improved by using an ex situ sputtered AlN nucleation layer. improvement has attributed reduction GaN formation on sidewall cone shape pattern. In this study, four kinds PSS samples were fabricated investigate effect location growth mechanism in detail.
A novel purely sidewall InGaN/GaN core-shell nanorod green light-emitting diode (LED) has been demonstrated by 3D dielectric passivation and selective epitaxial growth technologies. The LED device exhibits unprecedented stable emission wavelength low efficiency droop.
Nitride-based nanopillars were successfully fabricated by nanoimprint lithography. A nanowhisker of indium–tin oxide (ITO) deposited on oblique evaporation method was investigated in nitride-based and thin ZnO layers grown atomic layer deposition (ALD). From the results field-emission scanning electron microscopy (SEM) measurement, it found that ITO whiskers grew covered with ZnO. Moreover, from UV–visible spectrophotometry bidirectional reflectance distribution function (BRDF) measurements,...
A novel combination of quantum dot intermediate band solar cell and dual-junction tandem is proposed studied numerically. We built our device model by using Matlab <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> coding commercial software Silvaco . proper inclusion quantum-dot-related carrier absorption adapted through modified extinction coefficient k, effective gap the device. The final calculation shows optimal efficiency enhancement...
An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency measured between 1200 and 1800 nm can be as high 3.55%.
The nano-whisker and nano-rod of ITO deposited with oblique evaporation method has been investigated optically. This hybrid structure above ZnO medium reduces optical reflection to 3.7% in the range between 365 800 nm.
The embedded InN dot-like structures within nitride-based solar cells is promising for extended visible and infrared absorption of spectrum. temperature dependent epitaxial growth was demonstrated in a low-pressure metal organic chemical vapor deposition (MOCVD) system the coefficient fabricated InN-dots measured integrated into APSYS~ simulation platform. dimension-quantization effect layer investigated via photoluminescence (PL) measurements. Higher region induces multiple PL peaks...
The InN capped with GaN structures is promising for extended visible and infrared absorption. low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. strain effect mixed In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> N complex the layer were investigated via Raman photoluminescence (PL) measurements. capping...
An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as 14.2% can be measured via AM1.5G solar simulated spectra.
We report a site-controlled growth of InN on GaN substrate. Crystalline micropillars were selectively grown from the hexagonal V-pits surface. The mechanism and photoluminescent property will be discussed.
In this work, we demonstrate the doping concentration and positioning effect of type-II quantum well (QR) on solar cell performances in terms numerical simulation. The variation location can affect band diagram seriously possibly form back surface field which either facilitate or deteriorate carrier collection. A wide range parameters are calculated to reveal trend previous experimental results also discussed.