- Semiconductor Quantum Structures and Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Advanced Fiber Laser Technologies
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Microwave Engineering and Waveguides
- Semiconductor materials and interfaces
- Advanced Power Amplifier Design
- Electronic and Structural Properties of Oxides
- Quantum Dots Synthesis And Properties
- Terahertz technology and applications
- EEG and Brain-Computer Interfaces
- Ga2O3 and related materials
- Spectroscopy and Laser Applications
- Advanced Antenna and Metasurface Technologies
- Wireless Power Transfer Systems
- CCD and CMOS Imaging Sensors
- Optical Imaging and Spectroscopy Techniques
Gwangju Institute of Science and Technology
2014-2024
Chung-Ang University
2024
Xidian University
2021
Convergence Research Center for Diagnosis Treatment and Care System of Dementia
2016
Korea Institute of Science & Technology Information
2015
NTT (Japan)
2009
University of Central Florida
2002
Alzheimer's disease (AD) is a progressive neurological disorder, and mild cognitive impairment (MCI) stage between normal (CN) AD. Although timely diagnosis the key to treatment, conventional diagnostic methods make periodic impossible due various issues, such as pain cost. Therefore, we propose method for early diagnosing by focusing on gait, which safe efficient. Seven wearable devices with built-in inertial measurement unit were used collect gait data from 145 subjects, seven experiment...
GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the along <111> directions both Si for conditions investigated. The had very uniform diameter direction. X-ray diffraction data transmission GaAs<111> mixed crystal structure of hexagonal wurtzite cubic zinc-blende. Current-voltage characteristics junctions...
A low-noise, low-power, chopper-stabilized, current-feedback instrumentation amplifier (CFIA) for bio-potential signal acquisition applications is presented. The proposed design includes an ac-coupled chopper-stabilized CFIA to reduce 1/f noise. It also has a switched-capacitor integrator the input offset and provide high-pass filter. designed using Samsung 0.13-μm CMOS process. shows rms referred noise voltage of 0.75 μV within bandwidth 0.01-100 Hz, common-mode rejection ratio 125 dB,...
Functional near-infrared spectroscopy (fNIRS), known as a non-invasive optical neuroimaging technique, is currently used to assess brain dynamics during the performance of complex works and everyday tasks. However, deep learning approaches distinguish stress levels based on changes in hemoglobin concentrations have not yet been extensively investigated. In this paper, we evaluated efficiencies advanced methods differentiating rest task periods Stroop experiments. We first explored that...
The timely diagnosis of Alzheimer’s disease (AD) and its prodromal stages is critically important for the patients, who manifest different neurodegenerative severity progression risks, to take intervention early symptomatic treatments before brain damage shaped. As one promising techniques, functional near-infrared spectroscopy (fNIRS) has been widely employed support early-stage AD diagnosis. This study aims validate capability fNIRS coupled with Deep Learning (DL) models multi-class...
Effects of undoped photo-absorption layers in modified uni-traveling carrier photodiode structures on quantum efficiency and bandwidth are reported. Modified having different layer thicknesses were fabricated characterized. Efficiency photodiodes an optimized larger than those without such a layer, which agrees well with the theoretical analysis dynamic behavior using drift-diffusion model. The results indicate that both can be extended by incorporating thickness layer.
All-optical signal up-conversion into the millimeter-wave frequency band is demonstrated using a semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) wavelength converter, which based on cross phase modulation (XPM) effect in SOA. This scheme shows good conversion efficiency with polarization immunity and no increase noise. The measured noise of up-converted RF 32.5 GHz -79.2 dBc/Hz at 10 KHz offset, limited by that from LO signal. A two-tone measurement performed to...
A simultaneous all-optical upconversion technique for cost-effective wavelength-division-multiplexing (WDM) radio-over-fiber (RoF) applications utilizing a semiconductor optical amplifier (SOA) Mach-Zehnder interferometer is investigated. The proposed scheme uses only one frequency upconverter multi-RoF channels, thereby reducing the complexity and cost of system. Error-free two WDM intermediate (IF) channels (155-Mb/s differential phase-shift keying signal at 2.5 GHz) to an radio (22.5...
In this study, the atomic layer etching characteristics and etch mechanism of (100) InP as functions Cl2 pressure Ne neutral beam irradiation dose were investigated. When lower than critical values 0.4mTorr 7.2×1015at.∕cm2cycle, respectively, rate (Å/cycle) surface roughness varied with dose. However, when higher values, remained 1.47Å∕cycle, corresponding to one monolayer per cycle, stoichiometry similar those before etching.
Au-activated InAs nanowires were grown on Si substrates by solid source molecular beam epitaxy (SSMBE). Epitaxial growth of turned out to be very sensitive the surface condition substrates. having a direction, high crystalline quality and aspect ratio over 300 with uniform lateral size along direction using high-temperature pre-annealing process in MBE chamber remove residual oxides from
A single-chip power amplifier (PA) with a reconfigurable output-matching network is presented for fourth-generation multiband mobile phone applications. The PA (MBPA) consists of an and [a band selection circuit (BSC) tunable transmission line (TTL)]. Multiband load-impedance modulation done by controlling p-i-n switch the BSC varactor diodes TTL in network. This MBPA delivered gain more than 11 dB, adjacent channel leakage ratio Evolved Universal Mobile Telecommunications System (UMTS)...
Feasibility of various cryptographic algorithms for use in a wireless sensor network utilizing MICAz-type motes and the TinyOS is investigated. Usage resources including memory, computation time, power each algorithm was characterized experimentally. The RC4 MD5 turned out to be most suitable terms total processing time used
Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth method using a molecular beam epitaxy (MBE). The MBE could produce controlled crystalline orientation and uniform diameter along the wire axis of adjusting conditions including temperature V/III flux ratio. Growths GaAslang001rang as well GaAslang111rang observed transmission electron microscopy scanning microscopy. Epitaxially Si(111) substrate verified through x-ray diffraction out-of-plane...
Simultaneous all-optical frequency-downconversion technique utilizing a semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) is experimentally demonstrated, and its application to wavelength-division-multiplexing (WDM) radio over fiber (RoF) uplink proposed. The conversion efficiencies from 22.5 (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RF</sub> ) 2.5 GHz xmlns:xlink="http://www.w3.org/1999/xlink">IF</sub> =f -2f...
A novel all-optical frequency up-converter utilizing four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) was proposed and experimentally demonstrated. The converted an intermediate (IF) signal (f(IF) = 2.5 GHz) to radio (RF) (f(RF) 35 40 through with local oscillator (LO) (f(LO) 37.5 GHz). showed positive conversion efficiency of 5.77 dB for the IF power -22 dBm LO -13 dBm. This scheme broad bandwidths respect both frequencies. phase noise -84.5 dBc/Hz GHz (f(LO)) offset 10 kHz...
We propose and demonstrate a continuous-wave vector THz imaging system utilizing photonic generation of two-tone signals self-mixing detection. The proposed measures amplitude phase information simultaneously without the local oscillator reference or rotation scheme that is required for heterodyne homodyne In addition, 2π ambiguity occurs when sample thicker than wavelength radiation can be avoided. this work, signal having two frequency components was generated with uni-traveling-carrier...
We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in collector. The DHBT showed improved current-voltage characteristics at low collector-emitter bias compared those without heavily layer, while maintaining high breakdown voltage (BV/sub CEO//spl sim/20 V). Small area, self-aligned emitter transistors two 2×5 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
High-quality Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning electron microscopy, and high-resolution transmission microscopy reveal that the epitaxially with uniform diameters along nanowires. While Si(111) (001) mainly ⟨111⟩ direction zinc-blende wurtzite structures, unusual ⟨001⟩ pure structure also observed. Strong photoluminescence was observed from Si(001) substrate at room...
A simultaneous all-optical frequency upconversion technique using four-wave mixing in a semiconductor optical amplifier (SOA) is experimentally demonstrated for wavelength-division-multiplexing (WDM) radio-over-fiber applications. Eight WDM radio-frequency (RF) signals having the RF of 26.5 GHz are simultaneously generated by eight intermediate-frequency (IF) IF 2.5 with an local oscillator signal 24 single SOA. The power penalty generation at bit-error rate 10 <sup...
We propose and experimentally demonstrate an all-optical upconverter for the generation of optical single-sideband (OSSB) signal in radio-over-fiber (RoF) systems. The OSSB signal, which is required overcoming fiber chromatic dispersion problem RoF systems, generated by using SSB consisting interleaver a semiconductor amplifier. With this upconversion technique, radio frequency (RF) signals with RF ranging from 15 GHz to 42.5 are mixing intermediate (IF) (1 GHz) local oscillator transmitted...
A broadband photonic single sideband (SSB) frequency up-converter based on the cross polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA) is proposed and experimentally demonstrated. An radio (RF) signal form of an (OSSB) generated by SSB to solve power fading problem caused fiber chromatic dispersion. The OSSB RF has almost identical carrier power. This up-conversion scheme shows flat electrical response as function range from 31 GHz 75 after 40 km mode (SMF)...
An all-optical frequency downconversion utilizing a four-wave mixing effect in single semiconductor optical amplifier (SOA) was experimentally demonstrated for wavelength division multiplexing (WDM) radio-over-fiber (RoF) applications. Two WDM radio (RF) signals having 155 Mbps differential phase shift keying (DPSK) data at 28.5 GHz were simultaneously down-converted to two intermediate (IF) an IF of 4.5 by with local oscillator (LO) signal LO 24 the SOA. The bit-error-rate (BER) performance...
A chopper-stabilized amplifier for bio-potential signal acquisition applications is presented. The proposed design includes an AC-coupled to reduce the 1/f noise and a tunable MOS-capacitor pseudo-resistor control bandwidth. It employs positive feedback input impedance boosting loop (IBL) increase common-mode rejection ratio (CMRR). designed fabricated using Magnachip/SK Hynix 0.18 μm 1 poly-6 metal CMOS process tested with DC supply voltage of 1.5 V (VDD 0.75 VSS -0.75 V). achieves midband...
We report on the microwave performance of InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBT's) utilizing a carbon-doped base grown by chemical beam epitaxy (CBE). The f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> HBT having two 1.5×10 μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> emitter fingers were 175 GHz 70 GHz, respectively, at I/sub C/=40...