Tomasz Raszkowski

ORCID: 0000-0001-8559-6891
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About
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Research Areas
  • Heat Transfer and Optimization
  • Thermal properties of materials
  • Thermoelastic and Magnetoelastic Phenomena
  • Silicon Carbide Semiconductor Technologies
  • Induction Heating and Inverter Technology
  • Model Reduction and Neural Networks
  • Magnetic Properties and Applications
  • Semiconductor Lasers and Optical Devices
  • Numerical methods in engineering
  • GaN-based semiconductor devices and materials
  • Heat Transfer and Boiling Studies
  • Numerical methods in inverse problems
  • Mechanical and Thermal Properties Analysis
  • Thermal Radiation and Cooling Technologies
  • Refrigeration and Air Conditioning Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Building Energy and Comfort Optimization
  • Fractional Differential Equations Solutions
  • Sensor Technology and Measurement Systems
  • Laser and Thermal Forming Techniques
  • Advanced Multi-Objective Optimization Algorithms
  • Heat Transfer and Mathematical Modeling
  • Acoustic Wave Phenomena Research
  • Composite Material Mechanics
  • Elasticity and Wave Propagation

Lodz University of Technology
2015-2020

University of Łódź
2017

Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is main factor affecting electrical and lighting parameters these devices, thermal models essential subcomponents multidomain commonly used for simulation their operation. The authors investigated white power light-emitting soldered to Metal Core Printed Circuit Boards (MCPCBs). tested devices were placed in a light-tight box on cold plate cooling curves registered different...

10.3390/en12091724 article EN cc-by Energies 2019-05-07

This paper presents the Finite Difference Method solution of Dual-Phase-Lag heat transfer model appropriate for a thin one-dimensional problems with flux heating on one side and fixed reference temperature other side. The simulation results are shortly compared Fourier-Kirchhoff equation model.

10.1109/mixdes.2015.7208558 article EN 2015-06-01

The main aim of this paper is to present a detailed description the research related modeling heat conduction in modern electronic structures including special consideration numerical aspects analyzed algorithms.The motivation undertake and some most important results experiments simulations are also included.Moreover, appoximation problem as well methodology sample solution mentioned presented.In part, discretisation techniques, Ordinary Differential Equation algorithms simulation for...

10.7494/csci.2017.18.1.71 article EN publisher-specific-oa Computer Science 2017-01-01

This paper compares Green׳s function solutions obtained for different heat conduction models, such as the Fourier–Kirchhoff equation, Cataneo–Vernotte wave equation and Dual-Phase-Lag equation. The are computed a nanometer size one-dimensional benchmark structure with Neumann Dirichlet conditions imposed at its boundaries. Particular attention was paid to analysis of diffusion speed predicted by considered models dependence on time lag values.

10.1016/j.mejo.2015.07.008 article EN Microelectronics Journal 2015-08-17

This paper includes the analyses related to thermal model order reduction. The simplified, one-dimensional structure is investigated. reduction technique based on moment matching employed. For this purpose, Krylov-subspace-based method used. generation of reduced Dual-Phase-Lag heat transfer carried out using Arnoldi algorithm. temperature distributions obtained both full- and reduced-order models are analyzed carefully compared. Moreover, analysis level relative error outputs generated in...

10.1109/eurosime.2017.7926261 article EN 2017-04-01

This paper demonstrates the temperature distribution in structure which contains two platinum resistors. The Finite Element Method solution of Fourier-Kirchhoff and Dual-Phase-Lag models for two-dimensional problem is presented. Simulation results are compared carefully discussed.

10.1109/mixdes.2016.7529750 article EN 2016-06-01

This paper, based on the practical example of a hybrid test circuit, illustrates importance proper modeling heat transfer coefficient dependence surface temperature rise and fluid velocity in air cooled electronic systems. The presented experiments show that for considered circuit value strongly depends both these factors, thus its changes have to be taken into account thermal simulations. A simple empirical relation proposed here by authors allows accurate assessment local values different...

10.1109/semi-therm.2017.7896902 article EN 2017-01-01

This paper discuses on the practical example problem of thermal modelling power LEDs used in luminaries. The proper determination resistance is crucial for accurate computation device junction temperature, which determines operating parameters. Here, this illustrated based analysis LED heating curve measurements taken various amount dissipated device, soldered to substrate different ways. For each case, a compact model generated employing Network Identification by Deconvolution method.

10.1109/miel.2017.8190091 article EN 2017-10-01

This paper discusses, based on a practical example, the problem of estimating average radiation and convection heat transfer coefficient value in thermal models electronic systems. The proposed empirical formulas are fitted to results temperature measurements taken for power diode attached sink. were repeated natural forced air cooling conditions. These relations used subsequently device simulation with compact models.

10.1109/mixdes.2016.7529746 article EN 2016-06-01

In this paper the electro-thermal analyses related to modelling of heat transfer in modern electronic structure, consisting two nanosized transistors, are presented. The Dual-Phase-Lag model appropriate for such kind structure instead classical Fourier-Kirchhoff is used. Moreover, thermal and electric domains coupling described. Furthermore, contains empirical information connected with implementation algorithms using multiprocessor supercomputers built Intel Xeon CPU technology.

10.1109/itherm.2016.7517669 article EN 2016-05-01

This paper presents the comparison of temperature distribution in test structure chip obtained using Fourier-Kirchhoff and Dual-Phase-Lag heat transfer models. The investigated consisting two polysilicon resistors used as heater thermometer, which are located inside silicon dioxide layer. simulation results compared with those have been received similar containing platinum resistors. Some numerical problems observed during model also briefly presented.

10.1109/therminic.2016.7749039 article EN 2016-09-01

In this paper the temperature distribution of nanoscale structure is investigated. Presented analyses focus on two-dimensional rectangular structure. The problem has been solved using Dual-phase-Lag heat transfer model. order to reduce complexity problem, reduction methodology based Krylov subspace used. reduced-order model matrices generation one-sided Arnoldi algorithm. Moreover, comparison results received both reduced and full thermal models for different number discretization mesh nodes...

10.26485/0459-6854/2018/68.1/4 article EN Bulletin de la Société des Sciences et des Lettres de Łódź Série Recherches sur les Déformations 2018-01-01

Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is main factor affecting electrical and lighting parameters these devices, thermal models essential subcomponents multidomain commonly used for simulation their operation. The authors investigated white power light-emitting soldered to metal core PCBs. tested devices were placed in a light-tight box on cold plate cooling curves registered different diode current values....

10.1109/itherm.2019.8757301 article EN 2019-05-01

This paper presents an analysis related to thermal simulation of the test structure dedicated heat-diffusion investigation at nanoscale. The consists thin platinum resistors mounted on wafer made silicon dioxide. A bottom part contains layer. Simulations were carried out based simulator prepared by authors. Simulation results compared with real measurement outputs yielded for mentioned structure. authors also propose Grünwald–Letnikov fractional space-derivative Dual-Phase-Lag heat transfer...

10.3390/en13092379 article EN cc-by Energies 2020-05-09

This paper presents an analysis of the time complexity algorithms prepared for solving heat transfer problems at nanoscale. The first algorithm uses classic Dual-Phase-Lag model, whereas second employs a reduced version model obtained using Krylov subspace method. manuscript includes description finite difference method approximation real microelectromechanical system (MEMS) structure manufactured by Polish Institute Electron Technology. In addition, scheme as well subspace-based order...

10.3390/en13102520 article EN cc-by Energies 2020-05-15

The investigations presented in this paper illustrate the problem of modelling average value convective heat transfer coefficient case a free convection cooled power device with sink. total junction-to-ambient thermal resistance is dominated then by its component reflecting exchange ambient at outer surfaces Therefore, proper physical phenomenon crucial for accurate prediction junction temperature. Based on obtained temperature measurement results an empirical formula proposed allowing...

10.1109/eurosime.2016.7463334 article EN 2016-04-01

This paper presents the scope of applicability Dual-Phase-Lag model in modern electronic structures. Moreover, investigation obligatory application this model, instead classical approach based on Fourier-Kirchhoff to heat transfer modeling is included. Furthermore, modified thermal containing special time lag parameter, also taken into consideration. In order obtain mentioned both analyzed three different power transistors i.e. unipolar, bipolar and insulated gate (IGBT), have been...

10.1109/eurosime.2017.7926288 article EN 2017-04-01

This paper presents the scope of applicability Dual-Phase-Lag heat transfer model in electronic devices as-well-as integrated circuits. Moreover, investigation necessity use approach, instead classical Fourier-Kirchhoff model, to modelling is included. In order obtain mentioned both analyzed thermal has been used for transistor elementary cells including FinFET technology power e.g. unipolar (MOSFET, VDMOS), bipolar and insulated gate transistors (IGBT)-SiC merged diode. The received...

10.1109/therminic.2017.8233793 article EN 2017-09-01

In this paper the comparison of temperature distribution in nanosized FinFET and Gate-All-Around FET (GAAFET) structures is presented. Two different heat transfer models are taken into considerations. The first one classical Fourier-Kirchhoff model, while second called Dual-Phase-Lag model. thermal analyses include transient steady-state temperatures inside GAAFET channels. order to make analysis more convenient, normalization values have been introduced. All parameter from specialist literature.

10.1109/eptc.2017.8277507 article EN 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC) 2017-12-01

This paper presents the comparison of temperature distribution in modern nanosized electronics structures obtained using different heat transfer models and their parameters. The basic analyzed structure is Vertical-Slit Field Effect Transistor (VeSFET). rise inside investigated has been calculated based on two models. first one classical Fourier-Kirchhoff approach, while second uses Dual-Phase-Lag model.Then, analysis influence model parameters also prepared. Firstly, time lag investigated....

10.1109/eptc.2018.8654377 article EN 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC) 2018-12-01

This paper presents the analyses of heat distribution based on non-linear order time derivative. The described problem has been demonstrated a simple rectangular structure made silicon. Moreover, thermal model called Dual-Phase-Lag employed to obtain solution. Furthermore, new approximation proposed. modification Grünwald-Letnikov definition fractional derivative order, which appears in Fourier-Kirchhoff model, modified non-integer order. Next, received normalized rises temperature have...

10.26485/0459-6854/2018/68.3/7 article EN Bulletin de la Société des Sciences et des Lettres de Łódź Série Recherches sur les Déformations 2018-01-01
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