A5002327772- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Copper Interconnects and Reliability
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Advancements in Semiconductor Devices and Circuit Design
- CCD and CMOS Imaging Sensors
- Nanowire Synthesis and Applications
- Metal and Thin Film Mechanics
- Silicone and Siloxane Chemistry
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Advanced Surface Polishing Techniques
- Organic Electronics and Photovoltaics
- Electrical and Thermal Properties of Materials
- Organic Light-Emitting Diodes Research
- Ferroelectric and Negative Capacitance Devices
- Ga2O3 and related materials
- Synthesis and properties of polymers
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
National Yang Ming Chiao Tung University
2016-2025
National Cheng Kung University
2004-2024
National Health Research Institutes
2018-2023
Xi'an Jiaotong University
2023
Ensemble Therapeutics (United States)
2022
University of California, Berkeley
2020
University of Lausanne
2016-2018
Ludwig Cancer Research
2018
National Hsinchu University of Education
2015-2016
Center for Cancer Research
2016
The electrical and photosensitive characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">O</sub> are discussed. With filling ratio from 14 8, electron density a-IGZO channel decreases 7.5 3.8 ( ×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ); saturation...
Abstract A robust valley polarization is a key prerequisite for exploiting pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer unique platform develop such valleytronic devices, the anticipated long-lived has not been observed yet. Here we demonstrate that valley-polarized holes WSe 2 can be initialized by optical pumping. Using time-resolved Kerr rotation...
We investigated the effects of bias stress on a passivation-free InZnO thin-film transistors (a-IZO TFTs) exposed to either atmosphere or vacuum. The magnitude threshold voltage shift increased with application duration stress, an extent that was much larger in than recovered slowly its nearly initial value when gate removed. electrical metastability attributed interaction between a-IZO backchannel and oxygen/moisture from atmosphere, dynamic equilibrium finally achieved, regardless polarity voltage.
By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility 13.5 cm2/Vs, threshold voltage 3.28 V, and subthreshold swing 0.43 V/decade. This TFT performance 100 s is well competitive its counterpart at 450 °C for 1 h. A physical mechanism improvement also deduced. Owing to low budget selective heating materials interest, highly promising oxide in...
This letter studies the correlation of postannealing treatment on electrical performance amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior with field-effect mobility 39.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, threshold voltage (Vth) -2.8 V, and subthreshold swing 0.25 V/decade. Owing to structural relaxation by annealing, both trap states film interface at...
This work presents the electrical characteristics of nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N acting as a channel layer (TFT) device was prepared by dc reactive sputter with nitrogen and argon gas mixture at room temperature. Experimental results show that in situ incorporation to IGZO can properly adjust threshold voltage enhance ambient stability TFT device. Furthermore, has 44% increase carrier mobility reliability uniformity also progress obviously...
Molybdenum ditelluride (MoTe$_2$) has attracted considerable interest for nanoelectronic, optoelectronic, spintronic, and valleytronic applications because of its modest band gap, high field-effect mobility, large spin-orbit-coupling splitting, tunable 1T'/2H phases. However, synthesizing large-area, high-quality MoTe$_2$ remains challenging. The complicated design gas-phase reactant transport reaction chemical vapor deposition or tellurization is nontrivial the weak bonding energy between...
In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin (≈3 nm) amorphous indium–zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked thicker IZO channels. The ALD-deposited TFT an In/Zn ratio of ≈6:4 exhibited a high field-effect mobility ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
The paper presents a computational approach to reconstruct the shape of perfectly conducting cylinder. Based on boundary condition and measured scattered field, set nonlinear integral equations is derived imaging problem reformulated into an optimum one. By using genetic algorithm, object can be reconstructed. algorithm will always converge global extreme solution no matter what initial estimate. Numerical results are given demonstrate that, even when guess far away from exact one, good...
Electronic displays and flexible electronics are poised to significantly impact emerging industries, including displays, energy products, sensors medical devices, building a market that will grow in the future. The implementation of transparent electronic devices requires use material components could be formed using controlled deposition appropriate orientation onto substrate. Here, we report simple efficient means depositing polyimide (PI) substrate highly ordered aligned zinc oxide (ZnO)...
Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained varying either trigger voltage pulse or compliance current. In addition, RRAM devices exhibit superior characteristics programming/erasing endurance and data retention for application multi-level nonvolatile...
In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as carrier mobility 4.21 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm cm}^{2}/{\rm V}~{\rm s}$</tex></formula> and threshold...
A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing blue-light sensor, respectively, with completely compatible process integrated into in-cell embedded photo sensor architecture. The exhibits high optical responsivity (1280 A/W) excellent signal to noise ratio (~105) under blue light illumination. Afterwards, detail studies important issues about characteristics a-IZO in TFT are well discussed. results suggest that...
Computing-in-memory (CIM) technology for edge computing systems demands memory devices that are not only fast but also capable of being easily integrated into stackable manufacturing processes. To address these requirements, conductive bridge random access (CBRAM) devices, which compatible with copper-wiring processes, have emerged as promising candidates. However, the practical implementation CBRAM is hindered by challenges associated physical defects in its operating mechanism, leading to...