- Optical Network Technologies
- Advanced Optical Network Technologies
- Advanced Photonic Communication Systems
- Semiconductor Quantum Structures and Devices
- Advanced MIMO Systems Optimization
- Radio Frequency Integrated Circuit Design
- Low-power high-performance VLSI design
- Mobile Ad Hoc Networks
- Semiconductor materials and devices
- Wireless Communication Networks Research
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Terahertz technology and applications
- Advanced Wireless Network Optimization
- Opportunistic and Delay-Tolerant Networks
- Cooperative Communication and Network Coding
- Energy Efficient Wireless Sensor Networks
- Quantum and electron transport phenomena
- Cognitive Radio Networks and Spectrum Sensing
- Energy Harvesting in Wireless Networks
- Semiconductor Lasers and Optical Devices
- Interconnection Networks and Systems
- Software-Defined Networks and 5G
- VLSI and Analog Circuit Testing
- Gyrotron and Vacuum Electronics Research
Lovely Professional University
2022-2024
Indian Institute of Engineering Science and Technology, Shibpur
2014-2023
Intel (United States)
1999-2016
Maulana Abul Kalam Azad University of Technology, West Bengal
2012
University of California, Santa Barbara
1993-2005
Medical Research Council
2000
University of California, Los Angeles
1996
United States Army Corps of Engineers
1984
A leading edge 22nm 3-D tri-gate transistor technology has been optimized for low power SoC products the first time. Low standby and high voltage transistors exploiting superior short channel control, < 65mV/dec subthreshold slope <40mV DIBL, of Tri-Gate architecture have fabricated concurrently with speed logic in a single chip to achieve industry drive currents at record leakage levels. NMOS/PMOS Idsat=0.41/0.37mA/um 30pA/um Ioff, 0.75V, were used build 380Mb SRAM capable operating 2.6GHz...
We report the first observation of absolute negative conductance and multiphoton stimulated emission in sequential resonant tunneling semiconductor superlattices driven by intense terahertz electric fields. With increasing field strength near zero dc bias decreases towards then becomes negative. This is accompanied new steps plateaus that are attributed to multiphoton-assisted between ground states neighboring quantum wells a photon.
A 70MB SRAM chip is designed and fabricated in 65nm CMOS technology. column-based dynamic multi-V, scheme integrated into the design to improve cell read write margins while reducing power consumption. The operates at 3GHz with a 1.1V supply.
We describe active and nonlinear wave propagation devices for generation detection of (sub)millimeter (sub)picosecond signals. Shock-wave transmission lines (NLTL's) generate /spl sim/4-V step functions with less than 0.7-ps fall times. NLTL-gated sampling circuits signal measurement have attained over 700-GHz bandwidth. Soliton on NLTL's is used picosecond impulse broadband millimeter-wave frequency multiplication. Picosecond pulses can also be generated traveling-wave structures loaded by...
A 70-Mb SRAM is designed and fabricated on a 65-nm CMOS technology. It features 0.57-/spl mu/m/sup 2/ 6T cell with large noise margin down to 0.7 V for low-voltage operation. The fully synchronized subarray contains an integrated leakage reduction scheme dynamically controlled sleep transistor. virtual ground in standby by programmable bias transistors achieve good voltage control fine granularity under process skew. also has built-in defect "screen" circuit high volume manufacturing....
We have observed the inverse Bloch oscillator effect: resonant changes in current-voltage characteristics of miniband semiconductor superlattices when frequency is with a terahertz field and its harmonics. The resonances consist peak current accompanied by decrease at low bias side. At highest intensities we observe up to four-photon resonance. This an analog Shapiro steps S-I-S junction caused ac Josephson effect. increase stimulated emission photons can estimate THz gain superlattice from induced
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing contact resistivity, reducing junction widths. In mesa HBTs, minimum dimensions required for impose a width junction, frustrating device scaling. Narrow junctions can be using substrate transfer or collector-undercut processes or, if resistivity greatly reduced, ohmic contacts in...
We report the first observation of photon-assisted tunneling induced electric field domains, terahertz multiphoton-assisted tunneling, and an oscillatory dependence photon currents on strength in semiconductor superlattices. The new structure current-voltage ($I\ensuremath{-}V$) characteristics as well current compares favorably with a model for electrical profile superlattices which virtual states serve role similar to unperturbed quantum states.
In this paper, we have proposed two energy-efficient heuristics: (i) CMDE-RSCA (crosstalk-aware), and (ii) FMDE-RSCA (fragmentation-aware) to address the issues of inter-core crosstalk, fragmentation within core respectively- ensure quality transmission optical signal for dynamic traffic in space division multiplexing elastic network (SDM-EON), while maintaining survivability against single link failure. These heuristics based on multipath are compared with three existing survivable...
A 4Mb SRAM is designed and fabricated on a 65nm CMOS technology. It features 0.57 /spl mu/m/sup 2/ 6T cell with large noise margin down to 0.7V for low-voltage operation. The fully synchronized subarray contains an integrated leakage reduction scheme sleep transistor. also has built-in programmable defect "screen" circuit high volume manufacturing.
This paper proposes the design of energy and spectrum efficient, survivable Routing Spectrum Allocation (RSA) scheme for regenerator aware Elastic Optical Network (EON) under static environment. Regenerator(s), after being placed at intermediate site(s) EON, helps in reducing required a traffic demand associated with connection request, expense its huge power consumption. Any effort to ensure survivability also leads an increase consumption due provisioning redundancy EON. All these factors...
High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing contact resistivity, reducing junction widths. In mesa HBTs, minimum dimensions required for impose a width junction, frustrating device scaling. Narrow junctions can be using substrate transfer processes, or -if resistivity is greatly reduced -by of Ohmic contacts in structure. HBTs submicron exhibit extremely high f max gains mm-wave...
Nonlinear transmission lines (NLTL's) fabricated with Schottky diodes on GaAs were used to electrically generate 3.7-V step functions that had a measured 10%-90% fall time of 0.68 ps. These NLTL's integrated wafer sampling circuits 3-dB bandwidth 725 GHz. Key circuit performance are the use low-loss, high-wave-velocity elevated coplanar waveguide and elimination active device pad parasitics by contacting devices above plane wafer.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...
CMOS technology has followed Moore's law into the nanoscale regime where SRAM scaling is facing increasing challenges in gaining performance at reduced leakage power for future product applications. Despite advances process technologies and resultant ability to produce ever-smaller feature sizes, variations of scaled devices are playing an increasingly important role determining operating voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this letter, we have proposed a novel energy efficient multipath-based survivability scheme against single link failure in static traffic scenario. A two-step integer linear programming model is formulated to minimize the use of consuming elements by network, where both constraints regarding and efficiency are considered simultaneously. It observed that significant power consumption network can be saved using optical grooming over electrical for different protection ratios.
This study outlines a non‐orthogonal multiple access (NOMA) scheme for cooperative multicasting in cognitive radio network. The network consists of common base station (BS), which serves primary user multicast group (PU‐MG) and secondary MG (SU‐MG). SU‐MG is located between the BS PU‐MG. Their proposed spectrum sharing protocol comprises three transmission phases. first phase utilised by both PUs' SUs' signals, using NOMA transmission. In second phase, to overcome fading impairments,...
The response of a sequential resonant tunneling superlattice to intense THz radiation shows transition from classical rectification at frequencies below 600 GHz quantum above 1 THz. In the regime, dc current-voltage characteristics show distinct peaks due absorption and stimulated emission up three photons. For sufficiently high ac field strengths photon-assisted channels dominate transport, leading absolute negative conductance near zero bias, gain just Stark splitting ground states in...
A low-power high-speed SRAM macro is implemented in an ultra-low-power 8M 65nm CMOS for mobile applications. The 1Mb features a 0.667μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> low-leakage memory cell and operates with supply voltage from 0.5V to 1.2V. It at frequency of 1.1 GHz 1.2V 250MHz 0.7V. Leakage reduced 12μA/Mb the data retention 0.5V. measured bitcell leakage array ~2pA/b integrated reduction schemes.
Column-based dynamic power supply has been integrated into a high-frequency 70-Mb SRAM design that is fabricated on high-performance 65-nm CMOS technology. The fully synchronized achieves 3-GHz operating frequency at 1.1-V supply. cell array dynamically switched between two different voltage levels during READ and WRITE operations. Silicon measurement proven this method to be effective in achieving both good margins, while lowering the overall leakage consumption.
With surveys of what is happening around us, it beyond any argument to state that women are not safe enough move freely alone. It high time for the give a good retort society and raise their voice against crimes taking place regularly. Pervasive computing with its omnipresent nature emerging revolutionary approach towards technological growth. Anything everything surroundings can be made act as device using concept pervasive computing. This paper makes use ever-present provide security...