In this paper, high-speed surface-illuminated Ge-on-Si pin photodiodes with improved efficiency are demonstrated. With photon-trapping microhole features, the external quantum (EQE) of diode is >80% at 1300 nm and 73% 1550 nm an intrinsic Ge layer only 2 μm thickness, showing much improvement compared to one without microholes. More than threefold EQE also observed longer wavelengths beyond 1550 nm. These results make microhole-enabled promising cover both existing C L bands, as well a new...

Enhancing photon detection efficiency and time resolution in photodetectors the entire visible range is critical to improve image quality of time-of-flight (TOF)-based imaging systems fluorescence lifetime (FLIM). In this work, we evaluate gain, efficiency, timing performance avalanche photodiodes (APD) with trapping nanostructures for photons 450 850 nm wavelengths. At wavelength, our showed 30 times higher an increase from 16% >60% enhanced absorption a 50% reduction full width at half...

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm near-infrared wavelengths. We have experimentally demonstrated a technique utilizing photon-trapping surface structures to show prodigious improvement photoabsorption 1-μm-thin silicon, surpassing inherent absorption efficiency gallium arsenide for broad spectrum. allow bending normally incident light by almost 90 deg transform into laterally propagating modes...

Since the advent of impact ionization and its application in avalanche photodiodes (APD), numerous goals have contributed to steady improvements over several decades. The characteristic high operating voltages need for thick absorber layers (π-layers) Si-APDs pose complicated design operational challenges complementary metal oxide semiconductor integration APDs. In this work, we designed a sub-10 V operable Si-APD epitaxially grown stack on semiconductor-on-insulator substrate with submicron...

A surface-illuminated silicon photodiode with both high speed and usable external quantum efficiency from 900 to 1000 nm wavelength is highly desirable for intra/inter data center Ethernet communications, performance computing, laser radar application. Such Si photodiodes have the potential monolithic integration CMOS integrated circuits which can significantly reduce cost of transmission per gigabit below one US dollar. To overcome silicon's intrinsic weakness absorption in these...

Due to relatively low responsivity at near infrared (NIR) wavelengths, surface-illuminated silicon (Si) photodiodes (PDs) are not attractive for ultra-fast data communication applications despite their CMOS-compatibility. Metal-semiconductor-metal (MSM) well-known simplicity in fabrication compared pin and pn junctions-based counterparts, but they usually work with lower efficiencies due thin absorption layer that ensures high speed response. In this letter, we demonstrate a efficiency...

The ability to monolithically integrate high-speed photodetectors (PDs) with silicon (Si) can contribute drastic reduction in cost. Such PDs are envisioned be integral parts of optical interconnects the future intrachip, chip-to-chip, board-to-board, rack-to-rack, and intra-/interdata center links. Si-based special interest since they present potential for monolithic integration CMOS BiCMOS very-large-scale ultralarge-scale electronics. In second part this review, we efforts pursued by...

Monolithic integration of high-speed, high-efficiency photodiodes with receiver electronics on a single silicon chip is key to reduce cost and improve the performance data centers' short reach optical interconnects. We report CMOS-compatible surface illuminated PIN photodiode integrated micro- nano-scale holes that trap photons for longer interaction semiconductors resulting in higher absorption efficiencies. The fabricated demonstrates more than 55% external quantum efficiency (EQE) at 850...

Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and sensitivity are becoming critical for emerging applications, such as light detection ranging (LIDAR) systems, quantum communications, medical imaging. However, PDs present a bandwidth‐absorption trade‐off those that have limited their implementation. Photon‐trapping (PT) structures address this by enhancing the light–matter interactions, but maximizing performance remains challenge due to multitude of factors...

Abstract In this paper, we present a rigorous coupled-wave analysis (RCWA) of absorption enhancement in all-silicon (Si) photodiodes with integrated hole arrays different shapes and dimensions. The RCWA method is used to analyze the light propagation trapping on both Si-on-insulator (SOI) bulk Si substrates for datacom wavelength at about 850 nm. Our calculation measurement results show that funnel-shaped holes tapered sidewalls lead low back-reflection. A beam undergoes deflection...

Recently, a high-speed and high-efficiency silicon photodiode (PD) was demonstrated by enabling light trapping micro/nanostructured holes. While attractive for manipulation, these high surface-to-volume-ratio nanostructures, which are created top-down dry etching processes, can also bring other challenges, such as creating surface damage crystalline defects. To reduce the dark current level minimize recombination, successful passivation is vital step to achieving ultimate performance of PD...

Silicon photodiode-based CMOS sensors with backside-illumination for 300-1100 nm wavelength range were studied. We showed that a single hole in the photodiode increases optical efficiency of pixel. In near-infrared wavelengths, enhancement allows 70% absorption 3 μm thick Si. It is 4× better than flat compared different shapes and sizes arrays. have shown certain size shape hole-based pixels contribute to stronger efficiencies. The crosstalk was successfully reduced by employing trenches...

Theory is proposed for nanohole silicon pin/nip photodetector (PD) physics, promising devices in the future data communications and lidar applications.Photons carriers have wavelengths of 1 m 5 nm, respectively.We propose vertical nanoholes having 2D periodicity with a feature size will produce photons slower than those bulk silicon, but are unchanged.Close comparison to experiments validates this view.First, we study steady state PD current as function illumination power, results...

We propose a novel spectral imaging technique with silicon photodiodes arrays having unique responsivity across wide spectrum. Our method can detect random spectra less than 2% standard deviation.

Avalanche and Single-Photon photodetectors (APDs SPADs) rely on the probability of photogenerated carriers to trigger a multiplication process. Photon penetration depth plays vital role in this In silicon APDs, significant fraction short visible wavelengths is absorbed close device surface that typically highly doped serve as contact. Most region can be lost by recombination, get slowly transported diffusion, or multiplied with high excess noise. On other hand, extended near-infrared...

The performance of mid- and long-wavelength infrared (IR) detectors is still restricted with the dark current characteristics associated noise behavior. In this work, we propose reducing related IR to elevate high operating temperature improve detector quantum efficiency (QE), by using a thin absorption layer absorbing materials like lead selenide (PbSe) mercury cadmium telluride (HgCdTe). A photon bending trapping mechanism based on integrated micro/nanoscale holes was employed ensure...

We demonstrate a silicon-based surface-illuminated CMOS-compatible broadband photodiode with ≤30ps FWHM and above 55% EQE at 850nm for up to 50Gb/s by using photon-trapping micro/nano-structures. This is the fastest reported response Silicon photodiode.

Silicon single photon avalanche photodetectors with trapping structures demonstrate absorption enhancement from 800 nm to 1100 nm, and a response time of 28 ps, opening the possibility improve their detection efficiency, low jitter dark count rate.

Light trapping nanostructures implemented in PIN silicon photodetectors demonstrates more than 500% improvement of quantum efficiency at 905nm wavelength, enabling their implementation for short range, high resolution and low-cost LIDAR systems, required new data driven applications such as robotics, agriculture manufacturing.

3D simulations are conducted using Lumerical software to study the performance of surface illuminated silicon positive-intrinsic-negative photodiodes with microholes. Drift-diffusion equations solved including effects carrier lifetime due Shockley-Read-Hall and Auger recombination mechanisms, as well high field mobility. Lumerical's FDTD tool is used determine light absorption in device. The generation profile imported CHARGE transient-limited impulse response. An equivalent circuit...

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It demonstrated that a single hole on photodiode increases the optical efficiency pixel in near-infrared wavelengths. A optimal dimensions enhanced absorption by 60% 3 $\mu$m thick Si photodiode, which is 4 orders better than comparable flat photodiodes. We have shown there an size and depth exhibits maximal blue, green, red, infrared. Crosstalk successfully...

Crystalline silicon (c-Si) remains the most commonly used material for photovoltaic (PV) cells in current commercial solar market. However, technology requires "thick" due to relative weak absorption of Si spectrum. We demonstrate several CMOS compatible fabrication techniques including dry etch, wet etch and their combination create different photon trapping micro/nanostructures on very thin c-silicon surface light harvesting PVs. Both, simulation experimental results show that these...

Silicon avalanche photodiodes (Si-APD) are widely explored due to their high sensitivity, rapid response time, quantum efficiency, intrinsic multiplication gain, and low signal-to-noise ratio. We present an experimental demonstration of a wavelength selective APD stack epitaxially grown in two different doping orders:–1) N-on-P 2) P-on-N.We performance comparison between P-on-N based on the external efficiency (EQE), Ion/Ioff ratio, reverse biased dark state leakage current. By reversing...

The study proposes to use the photon trapping micro-structures enhance quantum efficiency of mid infrared photodetectors. nanostructure that is consist micro holes reduces reflection and bends near normally incident light into lateral modes in absorbing layer.