Abstract Two‐dimensional (2D) materials are intensively attractive for fabricating high sensitive photodetectors in terms of atomically thin flexible and ultrafast charge transport feature. Due to their body, designing performance detector requires new physical mechanisms device structures. In this review, we classify design strategies structures into four categories depending on (photovoltaic effect, photoconductive photothermoelectric effect or photobolometric surface plasma‐ wave‐assisted...

Abstract Optoelectronic synaptic devices, which combine the functions of photosensitivity and information processing, are essential for development artificial visual perception systems. Nevertheless, improving paired pulse facilitation (PPF) index optoelectronic is an urgent problem in construction high‐precision systems, has received less attention so far. Herein, a light‐stimulated transistor (LSST) device with ultra‐high PPF ( ≈ 196%) presented by introducing ultra‐thin carrier regulator...

Abstract Due to its unique band structure and topological properties, the 2D semimetal exhibits potential applications in photoelectric detection, polarization sensitive imaging, Schottky barrier diodes. However, inherent large dark current hinders further improvement of performance semimetal‐based photodetectors. In this study, a van der Waals (vdWs) field effect transistor (FET) composed PdTe 2 transition metal dichalcogenides (TMDs) WSe is fabricated, which high sensitivity detection wide...

Abstract With the rapid advancement of 2D material‐based optoelectronic devices, significant progress is made in development all‐optical logic synaptic biomimetic and multidimensional detection systems. As entering to high‐speed information era, there an urgent demand for complex, compact, multifunctional, low‐energy, intelligent sensing chips. Examining evolution current technologies reveals a parallel bipolar response mechanisms‐from simple positive negative responses more intricate...

Abstract In the advancing field of optoelectronics, multifunctional devices that integrate both detection and processing capabilities are increasingly desirable. Here, a gate‐tunable dual‐mode optoelectronic device based on MoTe 2 /MoS van der Waals heterostructure, designed to operate as self‐powered photodetector an synapse, is reported. The leverages photovoltaic effect in PN junction for photodetection utilizes trapping states at SiO interface emulate synaptic behavior. Gate voltage...

Two-dimensional (2D) Ruddlesden-Popper perovskites have attracted great interest for their promising applications in high-performance optoelectronic devices owing to greatly tunable band gaps, layered characteristics, and better environmental stability over three-dimensional (3D) perovskites. Here, we the first time report on photodetectors based few-layer MoS2 (n-type) lead-free 2D perovskite (PEA)2SnI4 (p-type) heterostructures. The heterojunction device is capable of sensing light entire...

A graphene-semiconductor heterojunction is very attractive for realizing highly sensitive phototransistors due to the strong absorption of semiconductor layer and fast charge transport in graphene. However, photoresponse usually limited a narrow spectral range determined by bandgap semiconductor. Here, an organic (C60 /pentacene) incorporated on graphene realize broadband (405-1550 nm) phototransistor with high gain 5.2 × 105 response time down 275 µs. The visible near-infrared parts...

Flexible pressure sensors are crucial for E-skins to enable tactile sensing capabilities. However, flexible often exhibit high hysteretic response caused by internal and external mechanical dissipations in materials. The hysteresis gives rise reliability issues, especially the presence of dynamic stress. In this letter, we report a capacitive sensor design with hierarchically microstructured electrodes obtain both sensitivity low hysteresis. sparsely spaced large pyramid microstructure...

In this paper, a 94 GHz substrate integrated waveguide (SIW) parallel-plate long-slot array antenna is presented, which able to generate dual-circular-polarization (CP) low sidelobe level (SLL) beams from single radiating aperture. This consists of two layers substrates. One used construct the unequal feeding network and other 15 × shared-aperture antenna. multilayer topology has smaller size compared with single-layer design. A simple feasible method applied control radiation pattern,...

Multifunctional hydrogels have important applications in various fields such as artificial muscles, wearable devices, soft robotics, and tissue engineering, especially for those with favorable mechanical properties, good low-temperature resistance, stimuli-responsive capabilities. In the current study, a type of polyacrylamide/sodium alginate/carbon nanotube (PAAm/SA/CNT) double-network (DN) hydrogel was fabricated, which exhibited high tensile strength 271.68 ± 6.04 kPa, conductivity 1.38...

A new method, Fe/Mg co-doping, is proposed for the first time to optimize thermochromic VO₂ and promising performance of VO₂-based smart windows practical applications successfully achieved.

In the pursuit of broadband photodetection materials from visible to mid-IR region, fresh three-dimensional topological insulators (3D TIs) are theoretically predicted be a promising candidate due its Dirac-like stable surface state and high absorption rate. this work, self-powered inorganic/organic heterojunction photodetector based on n-type 3D TIs Bi2Te3 combined with p-type pentacene thin film was designed fabricated. Surprisingly, it found that Bi2Te3/pentacene exhibited fast wideband...

Abstract Owing to its suitable electronic bandgap, excellent air stability, and high carrier mobility at room temperature, low‐dimensional bismuth oxyselenide (Bi 2 O Se) has become attractive in the context of visible–near‐infrared (VIS–NIR) detection. However, concentration bolometric effect Bi Se nanosheets are not conducive reducing dark current improving response speed, which hinders nanosheet‐based photodetectors from achieving an optimal performance. In this study, a nanoribbon is...

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed quantum states. Herein, large area and uniform insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation reduced interface defects influence. By tiling monolayer graphene (Gr) as-prepared Bi2Te3 layer,...

Abstract 2D materials possess superior optoelectronic properties, such as ultrahigh mobility and broadband photoresponse, making them one of the most vital platforms for diversified photodetectors. However, atomic thickness usually suffer from intrinsic low absorption. To promote photodetector performance, a feasible method is to integrate with low‐cost, flexible, tunable organics that form charge transfer (CT) heterojunction. As results, in‐depth multifunctional CT 2D‐inorganic/organic...

Detecting and distinguishing light polarization states, one of the most basic elements optical fields, have significant importance in both scientific studies industry applications. Artificially fabricated structures, e.g., metasurfaces with anisotropic absorptions, shown capabilities detecting controlling. However, their operations mainly rely on resonant absorptions based structural designs that are usually narrow bands. Here, a mid-infrared (MIR) broadband photodetector high PRs...

Two dimension (2D) material-based photodetectors usually indicate excellent properties such as ultrafast and broadband response, but the atomic thickness of 2D materials leads to low absorption coefficient.

Abstract 2D materials provide an effective strategy for the construction of fast‐responsive and highly sensitive Schottky heterojunction devices. However, strong Fermi pinning at contact between bulk metallic electrodes semiconductor greatly hinders wide application such devices in optoelectronics. Herein, a self‐powered photodetector with high performance is fabricated based on all‐2D van der Waals (vdWs) composed 2H‐NbSe 2 semiconducting MoSe . Benefiting from built‐in electric field,...

Abstract Triboelectric nanogenerator (TENG) has become a promising candidate for wearable energy harvesting and self‐powered sensing systems. However, processing large amounts of data imposes computing power barrier practical application. Machine learning‐assisted sensors based on TENG have been widely used in data‐driven applications due to their excellent characteristics such as no additional supply, high accuracy, low cost, good biocompatibility. This work comprehensively reviews the...

Abstract The human retina is able to extract key feature information from a large amount of redundant visual information, which the basis for efficient processing in system. However, current retina‐inspired photonic synaptic devices lack fast noise filtering capabilities, limiting speed image preprocessing neuromorphic systems. Here, transistor (PST) based on graphene/organic heterojunction that exhibits high photosensitivity and optically tunable characteristics visible near‐infrared...

Abstract In the domain of high‐performance short‐wave infrared (SWIR) photodetection and imaging, existing technologies predominantly utilize single‐crystal germanium III‐V semiconductors. Despite their efficacy, these materials are encumbered by laborious synthesis complex fabrication demands. this study, large‐area, high‐crystallinity Se 0.2 Te 0.8 thin films through a CMOS‐compatible vacuum thermal evaporation process is reported. A high‐speed, broad‐spectrum photodetector engineered with...

Sulfur-containing gas reflects the internal operation of SF6 gas-insulated switchgear and is great importance for insulation fault diagnosis equipment. Based on density functional theory (DFT), several sulfur-containing gases are selected as target detection gases, Au-doped Ti3C2Tx MXene used sensing material to carry out adsorption simulation in this paper. These results suggest that O OH terminated Au@Ti3C2Tx have larger energies well charge transfer SO2 SOF2, furthermore, combined with...

Over the past few years, two-dimensional (2D) nanomaterials, such as MoS₂, have been widely considered promising channel materials for next-generation high-performance phototransistors. However, their device performances are still mostly suffered from slow photoresponse (e.g. with time constant in order of milliseconds) due to relatively long length and substantial surface defect induced carrier trapping, well insufficient detectivity owing large dark current. In this work, a...

Schottky heterojunctions based on graphene–silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors fabricated using directly grown nanowalls (GNWs) electrodes. Due to metal-free growth process, GNWs–Si with an ultralow measured current noise 3.1 fA Hz−1/2 obtained, as-prepared...