A5034679082- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- solar cell performance optimization
- Advanced Semiconductor Detectors and Materials
- Silicon and Solar Cell Technologies
- Copper-based nanomaterials and applications
- Perovskite Materials and Applications
- Photovoltaic Systems and Sustainability
- Innovative Energy Harvesting Technologies
- Energy Harvesting in Wireless Networks
- Laser-induced spectroscopy and plasma
- Material Science and Thermodynamics
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
University of Verona
2016-2025
CdTe is a very robust and chemically stable material for this reason its related solar cell thin film photovoltaic technology now the only in first 10 top producers world. has an optimum band gap Schockley-Queisser limit could deliver high efficiencies as single junction device of more than 32%, with open circuit voltage 1 V short current density exceeding 30 mA/cm2. cells were introduced at beginning 70s they have been studied implemented particularly last years. The strong improvement...
Abstract Ambient energy harvesting has great potential to contribute sustainable development and address growing environmental challenges. Converting waste from energy-intensive processes systems (e.g. combustion engines furnaces) is crucial reducing their impact achieving net-zero emissions. Compact harvesters will also be key powering the exponentially smart devices ecosystem that part of Internet Things, thus enabling futuristic applications can improve our quality life homes, cities,...
Thin film solar cells have reached commercial maturity and extraordinarily high efficiency that make them competitive even with the cheaper Chinese crystalline silicon modules. However, some issues (connected presence of toxic and/or rare elements) are still limiting their market diffusion. For this reason new thin materials, such as Cu2ZnSnS4 or SnS, been introduced so expensive In Te, elements Se Cd, substituted, respectively, in CuInGaSe2 CdTe. To overcome abundance limitation Te In,...
Abstract One of the crucial points in production CdTe solar cells is insertion copper back contact and absorber. As demonstrated by top performing devices presented literature: necessary for high efficiency devices. However, despite this, was found to be a fast diffuser degrading cell long term. Different approaches limiting this effect have been widely from several laboratories, preparation Cu x Te controlled evaporation application ZnTe, which incorporates Cu, blocking its diffusion bulk....
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In this work, for the first time, CdSe is applied as a buffer layer on thermally evaporated Sb2Se3-based solar cells superstrate configuration. The influence of growth Sb2Se3 and performance finished devices have been analyzed compared with typical CdS/Sb2Se3 junction. Selenium vacancies in thin film act recombination centres, reason applying an excessive amount Se beneficial to devices. case structure, high concentration gradient enhances selenium diffusion into CdS sulphur resulting...
Sb2Se3 is a promising alternative absorber material for thin-film solar cells. However, by thermal evaporation technique, it appears to partially decompose, leading Se deficiency. In this work, we propose two routes the supply of selenium in deposition thin films. The first method co-evaporation and Sb2Se3, while second post-deposition selenization. Superstrate glass/FTO/TO/CdS/Sb2Se3/Au-configured cells are grown using evaporation. X-ray diffraction patterns confirm presence CdS peaks along...
Recently, the introduction of a CdSexTe1-x (CST) buffer in CdTe absorber has increased photon absorption at both short wavelengths visible range (by removal parasitic CdS layer) and infrared reduction band gap). But, moreover, efficiency improvement is also attributed to longer minority carrier lifetime when Se added. This paper presents CdSexTe1-x/CdTe devices fabricated by evaporation low substrate temperature with reduced thickness (2 µm). These cells achieve record current densities,...
Magnesium-doped Zinc Oxide (MZO) was used as an alternative high resistance transparent layer for CdS/CdTe thin film solar cells. Thin films of MZO were deposited by RF magnetron sputtering and on Indium Tin contact (ITO). CdTe devices including a at above 300 °C yielded mean efficiency exceeding 10.5 %. This compares with 8.2 % without the layer. The improvement in due to higher open circuit voltage fill factor. Lowering deposition temperature reduced performance devices.
Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement enhancing device efficiency high quality SnS thin films. We present our study recrystallization film by post deposition treatment at temperature with KI and SnCl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . A was achieved both , but it has been observed that this phenomenon occurs only when deposited temperature, whereas low...